Abstract: A method for manufacturing a semiconductor device is provided. In the method, a silicon-containing gas is supplied to a substrate having a recess in a surface thereof at a predetermined film deposition temperature, thereby depositing a first silicon film in the recess. Chlorine and hydrogen are supplied to the substrate while maintaining the predetermined film deposition temperature, thereby etching the first silicon film deposited in the recess to expand an opening width of the first silicon film. The silicon-containing gas is supplied to the substrate while maintaining the predetermined film deposition temperature, thereby further depositing a second silicon film on the first silicon film in the recess.

Abstract: A method for forming a silicon film includes supplying a first processing gas including a silicon-containing gas to a substrate to deposit a first silicon film under a first processing condition; and supplying a second processing gas including the silicon-containing gas to the substrate to deposit a second silicon film under a second processing condition. A second in-plane distribution of film characteristic when the second silicon film is deposited under the second processing condition is different from a first in-plane distribution of the film characteristic when the first silicon film is deposited under the first processing condition.

Abstract: A method for forming a silicon film includes supplying a first processing gas including a silicon-containing gas to a substrate to deposit a first silicon film under a first processing condition; and supplying a second processing gas including the silicon-containing gas to the substrate to deposit a second silicon film under a second processing condition. A second in-plane distribution of film characteristic when the second silicon film is deposited under the second processing condition is different from a first in-plane distribution of the film characteristic when the first silicon film is deposited under the first processing condition.

Abstract: A method for manufacturing a semiconductor device is provided. In the method, a silicon-containing gas is supplied to a substrate having a recess in a surface thereof at a predetermined film deposition temperature, thereby depositing a first silicon film in the recess. Chlorine and hydrogen are supplied to the substrate while maintaining the predetermined film deposition temperature, thereby etching the first silicon film deposited in the recess to expand an opening width of the first silicon film. The silicon-containing gas is supplied to the substrate while maintaining the predetermined film deposition temperature, thereby further depositing a second silicon film on the first silicon film in the recess.