Patents by Inventor Akemi Nagae

Akemi Nagae has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon carbide semiconductor device
    Patent number: 10020367
    Abstract: An object of the present invention is to provide a silicon carbide semiconductor device with which the electric field at the time of switching is relaxed and the element withstand voltage can be enhanced. The distance between the outer peripheral end of a second surface electrode and the inner peripheral end of a field insulation film is smaller than the distance between an outer peripheral end of the second surface electrode and an inner peripheral end of the field insulation film in the case where the electric field strength applied to the outer peripheral lower end of the second surface electrode is calculated so as to become equal to the smallest dielectric breakdown strength among the dielectric breakdown strength of the field insulation film and the dielectric breakdown strength of the surface protective film at the time of switching when the value of dV/dt is greater than or equal to 10 kV/?s.
    Type: Grant
    Filed: December 15, 2014
    Date of Patent: July 10, 2018
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kohei Ebihara, Akihiro Koyama, Hidenori Koketsu, Akemi Nagae, Kotaro Kawahara, Hiroshi Watanabe, Kensuke Taguchi, Shiro Hino
  • SILICON CARBIDE SEMICONDUCTOR DEVICE
    Publication number: 20170221998
    Abstract: An object of the present invention is to provide a silicon carbide semiconductor device with which the electric field at the time of switching is relaxed and the element withstand voltage can be enhanced. The distance between the outer peripheral end of a second surface electrode and the inner peripheral end of a field insulation film is smaller than the distance between an outer peripheral end of the second surface electrode and an inner peripheral end of the field insulation film in the case where the electric field strength applied to the outer peripheral lower end of the second surface electrode is calculated so as to become equal to the smallest dielectric breakdown strength among the dielectric breakdown strength of the field insulation film and the dielectric breakdown strength of the surface protective film at the time of switching when the value of dV/dt is greater than or equal to 10 kV/?s.
    Type: Application
    Filed: December 15, 2014
    Publication date: August 3, 2017
    Applicant: Mitsubishi Electric Corporation
    Inventors: Kohei EBIHARA, Akihiro KOYAMA, Hidenori KOKETSU, Akemi NAGAE, Kotaro KAWAHARA, Hiroshi WATANABE, Kensuke TAGUCHI, Shiro HINO
  • Introducing lattice defect with ice particles in semiconductor wafer
    Patent number: 4820650
    Abstract: The invention employs ice for introducing lattice defect into a semiconductor wafer, and is constructed to introduce particles of ice into the semiconductor wafer by ionizing (24) and accelerating (25) the particles of ice, whereby backside damage can be provided on the semiconductor wafer without leaving a pollutant source of the semiconductor wafer.
    Type: Grant
    Filed: November 16, 1987
    Date of Patent: April 11, 1989
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Akemi Nagae, Shinichi Satou, Takaaki Fukumoto, Toshiaki Ohmori