Patents by Inventor Akemi Satoh, legal representative

Akemi Satoh, legal representative has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrate processing method and method of manufacturing crystalline silicon carbide (SIC) substrate
    Patent number: 8187958
    Abstract: The present invention provides a method of processing a substrate and a method of manufacturing a silicon carbide (SiC) substrate in which, when annealing processing is performed on a crystalline silicon carbide (SiC) substrate, the occurrence of surface roughness is suppressed. A substrate processing method according to an embodiment of the present invention includes a step of performing plasma irradiation on a single crystal silicon carbide (SiC) substrate (1) and a step of performing high temperature heating processing on the single crystal silicon carbide (SiC) substrate (1) in which the plasma irradiation is performed.
    Type: Grant
    Filed: September 16, 2011
    Date of Patent: May 29, 2012
    Assignee: Canon Anelva Corporation
    Inventors: Masami Shibagaki, Masataka Satoh, Akemi Satoh, legal representative, Takahiro Sugimoto