Abstract: A three-dimensional additive manufacturing device, which performs additive manufacturing by irradiating, with a beam, a powder bed laid on a build surface area, includes a projection unit that is configured to project a pattern in which there is a luminance distribution in the build surface area and the luminance distribution changes over time, an imaging unit configured to image the pattern projected onto the build surface area, and a reflective part configured to reflect at least one among a first light beam projected by the projection unit and a second light beam captured by the imaging unit. The projection and imaging units are disposed outside the chamber where the additive manufacturing is performed on the build surface area. The reflective part is accommodated inside the chamber. The first and second light beams pass through one first window portion installed on the chamber.

Abstract: With an image processing device, a presence/absence of a product defect is judged based on detected-image data obtained by a radiographic device that detects radiation that has passed through a product, which is an inspection subject. With the image processing device, a position of a product feature in the detected-image data is identified based on a shape of the product feature indicated by feature data stored in a storage portion in advance, defect candidates are extracted with reference to the identified product feature in the detected-image data, and the presence/absence of a product defect is judged based on characteristic quantities of product defects indicated by a defect characteristic stored in the storage portion in advance and characteristic quantities of the defect candidates.

Abstract: With an image processing device (20), the presence/absence of a product defect is judged based on detected-image data obtained by a radiographic device that detects radiation that has passed through a product, which is an inspection subject. With the image processing device (20), a position of a product feature in the detected-image data is identified based on a shape of the product feature indicated by feature data stored in a DB storage portion (36) in advance, defect candidates are extracted with reference to the identified product feature in the detected-image data, and the presence/absence of a product defect is judged based on characteristic quantities of product defects indicated by the defect characteristic DB stored in the DB storage portion (36) in advance and characteristic quantities of the defect candidates.

Abstract: An operation method for cleaning a vacuum processing apparatus includes feeding a cleaning gas into a film deposition chamber of the vacuum processing apparatus when a predetermined number of batches of film deposition process is finished. The predetermined number of batch of film deposition processes is calculated based on a film deposition-related operating time (a film deposition time and a film deposition preparation time) and a cleaning-related operating time (a cleaning procedure time, a cleaning procedure preparation time, and a pre-deposition film deposition time).

Abstract: An object is to reduce the effect of a film thickness variation on the substrate surface of a thin film and improve the measuring accuracy. Provided are a light source that radiates single-wavelength light to an inspection-target substrate (W), which is formed by forming a thin film on a glass substrate from the glass substrate side; a light receiving element that is disposed such that the light receiving axis intersects with the optical axis of illumination light emitted from the light source at a predetermined inclination angle and that receives diffused transmitted light that has been transmitted through the inspection-target substrate W; and a computer (7) that obtains a haze ratio of the thin film on the basis of the intensity of the light received by the light receiving element.

Abstract: A thin-film inspection apparatus calculates a film thickness of a first transparent thin film and a second transparent thin film of an inspection-target substrate including the first and second transparent thin films and a transparent conductive film on a transparent glass substrate.

Abstract: A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate.

Abstract: A thin-film inspection apparatus includes a storage section (14) that stores at least two feature-value characteristics in which at least two feature values selected from feature values in a spectral reflectance spectrum that are affected by a variation in the film thickness of at least one of a first transparent thin film and a second transparent thin film are each associated with the film thickness of the first transparent thin film and the film thickness of the second transparent thin film; a light irradiation section (11) that irradiates an inspection-target substrate (S) with white light through a transparent glass substrate; a light receiving section (12) that receives reflected light reflected from the inspection-target substrate (S); and an arithmetic section (15) that obtains measurement values of the feature values stored in the storage section (14) from a spectral reflectance spectrum generated based on the received reflected light and that calculates the film thickness of each of the first transpa

Abstract: A photovoltaic device that can prevent performance degradation caused by electrodeposition generated as a result of moisture penetration. In the photovoltaic device, two or more intermediate insulation portions that electrically insulate solar cell unit cells positioned adjacently in the X-direction are formed on the substrate center side of side insulation portions so as to extend in the Y-direction in a parallel arrangement across the X-direction, a conductive portion that electrically connects solar cell unit cells positioned adjacently in the X-direction is provided in a position partway along each of the intermediate insulation portions, and the solar cell unit cells where the conductive portion is positioned are electrically insulated from a solar cell unit cell positioned adjacently in the X-direction by another of the intermediate insulation portions positioned distant from the conductive portion in the X-direction.

Abstract: An object is to reduce the effect of a film thickness variation on the substrate surface of a thin film and improve the measuring accuracy. Provided are a light source that radiates single-wavelength light to an inspection-target substrate (W), which is formed by forming a thin film on a glass substrate from the glass substrate side; a light receiving element that is disposed such that the light receiving axis intersects with the optical axis of illumination light emitted from the light source at a predetermined inclination angle and that receives diffused transmitted light that has been transmitted through the inspection-target substrate W; and a computer (7) that obtains a haze ratio of the thin film on the basis of the intensity of the light received by the light receiving element.

Abstract: An object is to efficiently measure the resistivity of a transparent conductive film with high accuracy in a non-destructive and non-contact manner.

Abstract: A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate.

Abstract: A method of manufacturing a solar cell panel, includes steps (a) to (e). The step (a) is a step of forming a solar cell module by laminating solar cell films on a transparency substrate. The step (b) is a step of performing an inspection of electric power generation on the solar cell module. The step (c) is a step of forming a solar cell panel by executing a panel formation on the solar cell module. The step (d) is a step of cleaning a light incidence surface of the solar cell panel. The step (e) is a step of performing an inspection of electric power generation on the solar cell panel. The step (d) is executed immediately before the step (e).

Abstract: An object is to efficiently measure the resistivity of a transparent conductive film with high accuracy in a non-destructive and non-contact manner.

Abstract: It is an object of the invention to provide a vacuum processing apparatus that enables setting a timing interval between self-cleaning procedures simply and so as to have general-use, enables significantly lengthening this timing interval, and improves the production efficiency. In a plasma CVD apparatus (100) that carries out self-cleaning procedure by feeding a cleaning gas into a film deposition chamber (1) in which film deposition processing is carried out on a substrate (4), the timing interval between self-cleaning procedures is set in a range in which a film deposition operating time ratio (Ps) is converged with respect to an increase in a film deposition process amount, where the film deposition operating time ratio (Ps) is represented by the proportion of a film deposition-related operating time (Tt) in the sum of the film deposition-related operating time (Tt) and a cleaning-related operating time (Tc).

Abstract: A method of manufacturing a solar cell panel, includes steps (a) to (e). The step (a) is a step of forming a solar cell module by laminating solar cell films on a transparency substrate. The step (b) is a step of performing an inspection of electric power generation on the solar cell module. The step (c) is a step of forming a solar cell panel by executing a panel formation on the solar cell module. The step (d) is a step of cleaning a light incidence surface of the solar cell panel. The step (e) is a step of performing an inspection of electric power generation on the solar cell panel. The step (d) is executed immediately before the step (e).

Abstract: A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode.

Abstract: A plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. A first and a second power supply section are installed on both ends of the discharge electrode installed in a plasma chemical vapor deposition apparatus, and are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.

Abstract: This invention relates a plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. The present invention installs a first and a second power supply section on both ends of the discharge electrode installed in plasma chemical vapor deposition apparatus, which are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.

Abstract: A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode.