Patents by Inventor Akeo SATOH
Akeo SATOH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11808807Abstract: A semiconductor integrated circuit device and an inspection method for a semiconductor integrated circuit device capable of improving burn-in screening quality by improvement in an activation rate of a DSP without operating a diagnostic circuit at the time of wafer level burn-in in a semiconductor integrated circuit device incorporating an analog circuit and the diagnostic circuit for the analog circuit are provided.Type: GrantFiled: April 3, 2020Date of Patent: November 7, 2023Assignee: Hitachi Astemo, Ltd.Inventors: Akeo Satoh, Kazunori Nemoto, Akira Kotabe
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Publication number: 20230194628Abstract: An object of the present invention is to provide a semiconductor device capable of diagnosing disconnection of a signal line that transmits a command signal in an inspection process even if the command signal is assumed not to be transmitted in the inspection process. A semiconductor device according to the present invention includes a first semiconductor integrated circuit and a control circuit, the control circuit includes a means for controlling a signal line in response to a response signal from the first semiconductor integrated circuit, and the control circuit further includes a means for controlling the signal line regardless of a signal from the first semiconductor integrated circuit.Type: ApplicationFiled: January 29, 2021Publication date: June 22, 2023Inventors: Tomoki TAKAMOTO, Akeo SATOH, Akira KOTABE
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Publication number: 20230080617Abstract: There is a possibility that unauthorized writing of adjustment information occurs in a sensor device in which the adjustment information of the sensor device can be written from outside.Type: ApplicationFiled: December 28, 2020Publication date: March 16, 2023Applicant: HITACHI ASTEMO, LTD.Inventors: Masahiro MATSUMOTO, Akira KOTABE, Akeo SATOH
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Patent number: 11467016Abstract: Provided are a semiconductor device and a sensor system capable of achieving improvement of noise resistance. Thus, an output circuit 106a in the semiconductor device includes: input terminals 207n, 207p; and an output terminal 208; an output amplifier 201 connecting the input terminals 207n, 207p to the output terminal 208; a feedback element 203 returning the output terminal 208 to the input terminal 207n; a switching transistor 204; and a resistance element 206. A drain of the switching transistor 204 is connected to the input terminal 207n. The resistance element 206 is provided between a back gate of the switching transistor 204 and a power source Vdd and has impedance of a predetermined value or more for suppressing noise of a predetermined frequency generated at the input terminal 207n.Type: GrantFiled: May 9, 2019Date of Patent: October 11, 2022Assignee: HITACHI ASTEMO, LTD.Inventors: Tatsuo Nakagawa, Akeo Satoh, Akira Kotabe, Masahiro Matsumoto
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Publication number: 20220216867Abstract: An electronic circuit that recognizes a disconnected state from an outside during disconnection of a power supply line is provided. For this purpose, an electronic circuit includes: a load provided between a power supply line and an output terminal in the electronic circuit; a transistor provided between the load and the output terminal; a current generation circuit that generates current using a power supply voltage at a power supply line in the electronic circuit; and a control circuit that controls the transistor using a control voltage that changes according to the current generated by the current generation circuit.Type: ApplicationFiled: April 3, 2020Publication date: July 7, 2022Inventors: Tatsuo NAKAGAWA, Akeo SATOH, Akira KOTABE
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Publication number: 20220187363Abstract: A semiconductor integrated circuit device and an inspection method for a semiconductor integrated circuit device capable of improving burn-in screening quality by improvement in an activation rate of a DSP without operating a diagnostic circuit at the time of wafer level burn-in in a semiconductor integrated circuit device incorporating an analog circuit and the diagnostic circuit for the analog circuit are provided.Type: ApplicationFiled: April 3, 2020Publication date: June 16, 2022Inventors: Akeo SATOH, Kazunori NEMOTO, Akira KOTABE
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Publication number: 20220107345Abstract: An electronic circuit including an output circuit capable of reducing breakage while satisfying the characteristics of an output signal is provided. For this purpose, the electronic circuit includes output signal generation elements 201 and 202 configured to generate an output signal, switches 203 and 204, and a voltage monitor circuit 205 configured to monitor a voltage applied to an output terminal 112. Here, the output signal generation elements 201 and 202 are connected to the output terminal 112 via the switches 203 and 204, and the voltage monitor circuit 205 is configured to be able to measure a voltage higher than a power supply voltage VDD connected to the output signal generation element 201 and controls the switches 203 and 204 so as to disconnect the output signal generation elements 201 and 202 and the output terminal 112 when the voltage of the output terminal 112 becomes equal to or higher than a predetermined value set higher than the power supply voltage VDD.Type: ApplicationFiled: October 11, 2019Publication date: April 7, 2022Applicant: Hitachi Astemo, Ltd.Inventors: Tatsuo NAKAGAWA, Akeo SATOH, Akira KOTABE
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Patent number: 11271554Abstract: To prevent an output of an intermediate potential by suppressing sneaking of a current from a signal line to a power line at the time of disconnection of a power supply. A control circuit which receives a power supply voltage from a power line L11 and outputs an output signal to a signal line L12 includes: a load R11 which is provided between the power line and the signal line; a first transistor P11 which is provided between the load and the signal line; a second transistor P12 which is provided between a well of the first transistor and the power line; and a gate control circuit 15 which connects a gate terminal of the first transistor and a gate terminal of the second transistor to the signal line and turns off the first transistor and the second transistor, at the time of disconnection of a power supply.Type: GrantFiled: September 13, 2019Date of Patent: March 8, 2022Assignee: Hitachi Astemo, Ltd.Inventors: Akeo Satoh, Akira Kotabe, Tatsuo Nakagawa
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Publication number: 20210344333Abstract: To prevent an output of an intermediate potential by suppressing sneaking of a current from a signal line to a power line at the time of disconnection of a power supply. A control circuit which receives a power supply voltage from a power line L11 and outputs an output signal to a signal line L12 includes: a load R11 which is provided between the power line and the signal line; a first transistor P11 which is provided between the load and the signal line; a second transistor P12 which is provided between a well of the first transistor and the power line; and a gate control circuit 15 which connects a gate terminal of the first transistor and a gate terminal of the second transistor to the signal line and turns off the first transistor and the second transistor, at the time of disconnection of a power supply.Type: ApplicationFiled: September 13, 2019Publication date: November 4, 2021Inventors: Akeo SATOH, Akira KOTABE, Tatsuo NAKAGAWA
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Publication number: 20210215523Abstract: Provided are a semiconductor device and a sensor system capable of achieving improvement of noise resistance. Thus, an output circuit 106a in the semiconductor device includes: input terminals 207n, 207p; and an output terminal 208; an output amplifier 201 connecting the input terminals 207n, 207p to the output terminal 208; a feedback element 203 returning the output terminal 208 to the input terminal 207n; a switching transistor 204; and a resistance element 206. A drain of the switching transistor 204 is connected to the input terminal 207n. The resistance element 206 is provided between a back gate of the switching transistor 204 and a power source Vdd and has impedance of a predetermined value or more for suppressing noise of a predetermined frequency generated at the input terminal 207n.Type: ApplicationFiled: May 9, 2019Publication date: July 15, 2021Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.Inventors: Tatsuo NAKAGAWA, Akeo SATOH, Akira KOTABE, Masahiro MATSUMOTO