Patents by Inventor Akeo SATOH

Akeo SATOH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11808807
    Abstract: A semiconductor integrated circuit device and an inspection method for a semiconductor integrated circuit device capable of improving burn-in screening quality by improvement in an activation rate of a DSP without operating a diagnostic circuit at the time of wafer level burn-in in a semiconductor integrated circuit device incorporating an analog circuit and the diagnostic circuit for the analog circuit are provided.
    Type: Grant
    Filed: April 3, 2020
    Date of Patent: November 7, 2023
    Assignee: Hitachi Astemo, Ltd.
    Inventors: Akeo Satoh, Kazunori Nemoto, Akira Kotabe
  • Publication number: 20230194628
    Abstract: An object of the present invention is to provide a semiconductor device capable of diagnosing disconnection of a signal line that transmits a command signal in an inspection process even if the command signal is assumed not to be transmitted in the inspection process. A semiconductor device according to the present invention includes a first semiconductor integrated circuit and a control circuit, the control circuit includes a means for controlling a signal line in response to a response signal from the first semiconductor integrated circuit, and the control circuit further includes a means for controlling the signal line regardless of a signal from the first semiconductor integrated circuit.
    Type: Application
    Filed: January 29, 2021
    Publication date: June 22, 2023
    Inventors: Tomoki TAKAMOTO, Akeo SATOH, Akira KOTABE
  • Publication number: 20230080617
    Abstract: There is a possibility that unauthorized writing of adjustment information occurs in a sensor device in which the adjustment information of the sensor device can be written from outside.
    Type: Application
    Filed: December 28, 2020
    Publication date: March 16, 2023
    Applicant: HITACHI ASTEMO, LTD.
    Inventors: Masahiro MATSUMOTO, Akira KOTABE, Akeo SATOH
  • Patent number: 11467016
    Abstract: Provided are a semiconductor device and a sensor system capable of achieving improvement of noise resistance. Thus, an output circuit 106a in the semiconductor device includes: input terminals 207n, 207p; and an output terminal 208; an output amplifier 201 connecting the input terminals 207n, 207p to the output terminal 208; a feedback element 203 returning the output terminal 208 to the input terminal 207n; a switching transistor 204; and a resistance element 206. A drain of the switching transistor 204 is connected to the input terminal 207n. The resistance element 206 is provided between a back gate of the switching transistor 204 and a power source Vdd and has impedance of a predetermined value or more for suppressing noise of a predetermined frequency generated at the input terminal 207n.
    Type: Grant
    Filed: May 9, 2019
    Date of Patent: October 11, 2022
    Assignee: HITACHI ASTEMO, LTD.
    Inventors: Tatsuo Nakagawa, Akeo Satoh, Akira Kotabe, Masahiro Matsumoto
  • Publication number: 20220216867
    Abstract: An electronic circuit that recognizes a disconnected state from an outside during disconnection of a power supply line is provided. For this purpose, an electronic circuit includes: a load provided between a power supply line and an output terminal in the electronic circuit; a transistor provided between the load and the output terminal; a current generation circuit that generates current using a power supply voltage at a power supply line in the electronic circuit; and a control circuit that controls the transistor using a control voltage that changes according to the current generated by the current generation circuit.
    Type: Application
    Filed: April 3, 2020
    Publication date: July 7, 2022
    Inventors: Tatsuo NAKAGAWA, Akeo SATOH, Akira KOTABE
  • Publication number: 20220187363
    Abstract: A semiconductor integrated circuit device and an inspection method for a semiconductor integrated circuit device capable of improving burn-in screening quality by improvement in an activation rate of a DSP without operating a diagnostic circuit at the time of wafer level burn-in in a semiconductor integrated circuit device incorporating an analog circuit and the diagnostic circuit for the analog circuit are provided.
    Type: Application
    Filed: April 3, 2020
    Publication date: June 16, 2022
    Inventors: Akeo SATOH, Kazunori NEMOTO, Akira KOTABE
  • Publication number: 20220107345
    Abstract: An electronic circuit including an output circuit capable of reducing breakage while satisfying the characteristics of an output signal is provided. For this purpose, the electronic circuit includes output signal generation elements 201 and 202 configured to generate an output signal, switches 203 and 204, and a voltage monitor circuit 205 configured to monitor a voltage applied to an output terminal 112. Here, the output signal generation elements 201 and 202 are connected to the output terminal 112 via the switches 203 and 204, and the voltage monitor circuit 205 is configured to be able to measure a voltage higher than a power supply voltage VDD connected to the output signal generation element 201 and controls the switches 203 and 204 so as to disconnect the output signal generation elements 201 and 202 and the output terminal 112 when the voltage of the output terminal 112 becomes equal to or higher than a predetermined value set higher than the power supply voltage VDD.
    Type: Application
    Filed: October 11, 2019
    Publication date: April 7, 2022
    Applicant: Hitachi Astemo, Ltd.
    Inventors: Tatsuo NAKAGAWA, Akeo SATOH, Akira KOTABE
  • Patent number: 11271554
    Abstract: To prevent an output of an intermediate potential by suppressing sneaking of a current from a signal line to a power line at the time of disconnection of a power supply. A control circuit which receives a power supply voltage from a power line L11 and outputs an output signal to a signal line L12 includes: a load R11 which is provided between the power line and the signal line; a first transistor P11 which is provided between the load and the signal line; a second transistor P12 which is provided between a well of the first transistor and the power line; and a gate control circuit 15 which connects a gate terminal of the first transistor and a gate terminal of the second transistor to the signal line and turns off the first transistor and the second transistor, at the time of disconnection of a power supply.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: March 8, 2022
    Assignee: Hitachi Astemo, Ltd.
    Inventors: Akeo Satoh, Akira Kotabe, Tatsuo Nakagawa
  • Publication number: 20210344333
    Abstract: To prevent an output of an intermediate potential by suppressing sneaking of a current from a signal line to a power line at the time of disconnection of a power supply. A control circuit which receives a power supply voltage from a power line L11 and outputs an output signal to a signal line L12 includes: a load R11 which is provided between the power line and the signal line; a first transistor P11 which is provided between the load and the signal line; a second transistor P12 which is provided between a well of the first transistor and the power line; and a gate control circuit 15 which connects a gate terminal of the first transistor and a gate terminal of the second transistor to the signal line and turns off the first transistor and the second transistor, at the time of disconnection of a power supply.
    Type: Application
    Filed: September 13, 2019
    Publication date: November 4, 2021
    Inventors: Akeo SATOH, Akira KOTABE, Tatsuo NAKAGAWA
  • Publication number: 20210215523
    Abstract: Provided are a semiconductor device and a sensor system capable of achieving improvement of noise resistance. Thus, an output circuit 106a in the semiconductor device includes: input terminals 207n, 207p; and an output terminal 208; an output amplifier 201 connecting the input terminals 207n, 207p to the output terminal 208; a feedback element 203 returning the output terminal 208 to the input terminal 207n; a switching transistor 204; and a resistance element 206. A drain of the switching transistor 204 is connected to the input terminal 207n. The resistance element 206 is provided between a back gate of the switching transistor 204 and a power source Vdd and has impedance of a predetermined value or more for suppressing noise of a predetermined frequency generated at the input terminal 207n.
    Type: Application
    Filed: May 9, 2019
    Publication date: July 15, 2021
    Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.
    Inventors: Tatsuo NAKAGAWA, Akeo SATOH, Akira KOTABE, Masahiro MATSUMOTO