Patents by Inventor Akhil MEHROTRA
Akhil MEHROTRA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11942332Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.Type: GrantFiled: August 12, 2022Date of Patent: March 26, 2024Assignee: Applied Materials, Inc.Inventors: Akhil Mehrotra, Gene S. Lee, Abhijit Patil, Shan Jiang, Zohreh Hesabi
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Publication number: 20240047195Abstract: A method, apparatus and system for processing a wafer in a plasma chamber system, which includes at least a plasma generating element and a biasing electrode, include generating a plasma in the plasma chamber system by applying a source RF source power to the plasma generating element for a first period of time of a pulse period of the RF source power, after the expiration of the first period of time, removing the source RF source power, after a delay after the removal of the RF source power, applying an RF bias signal to the biasing electrode for a second period of time to bias the generated plasma towards the wafer, and after the expiration of the second period of time, removing the RF bias signal from the biasing electrode before a next pulse period of the RF source power. The generated plasma biased toward the wafer is used to process the wafer.Type: ApplicationFiled: October 10, 2023Publication date: February 8, 2024Inventors: AKHIL MEHROTRA, VINAY SHANKAR VIDYARTHI, DAKSH AGARWAL, SAMANEH SADIGHI, JASON KENNEY, RAJINDER DHINDSA
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Patent number: 11817312Abstract: A method, apparatus and system for processing a wafer in a plasma chamber system, which includes at least a plasma generating element and a biasing electrode, include generating a plasma in the plasma chamber system by applying a source RF source power to the plasma generating element for a first period of time of a pulse period of the RF source power, after the expiration of the first period of time, removing the source RF source power, after a delay after the removal of the RF source power, applying an RF bias signal to the biasing electrode for a second period of time to bias the generated plasma towards the wafer, and after the expiration of the second period of time, removing the RF bias signal from the biasing electrode before a next pulse period of the RF source power. The generated plasma biased toward the wafer is used to process the wafer.Type: GrantFiled: October 29, 2018Date of Patent: November 14, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Akhil Mehrotra, Vinay Shankar Vidyarthi, Daksh Agarwal, Samaneh Sadighi, Jason Kenney, Rajinder Dhindsa
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Publication number: 20220392774Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.Type: ApplicationFiled: August 12, 2022Publication date: December 8, 2022Inventors: Akhil MEHROTRA, Gene S. LEE, Abhijit PATIL, Shan JIANG, Zohreh HESABI
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Patent number: 11417537Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.Type: GrantFiled: March 10, 2021Date of Patent: August 16, 2022Assignee: Applied Materials, Inc.Inventors: Akhil Mehrotra, Gene S. Lee, Abhijit Patil, Shan Jiang, Zohreh Hesabi
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Patent number: 11127599Abstract: Methods for etching a hardmask layer to transfer features into a material layer using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features through a proper sidewall and bottom management scheme during the hardmask open process. In one embodiment, a method for etching a hardmask layer to form features in the hardmask layer includes supplying an etching gas mixture onto a substrate to etch an exposed portion of a hardmask layer exposed by a patterned photoresist layer disposed on the substrate, switching the etching gas mixture to a deposition gas mixture comprising a silicon containing gas to form a passivation layer on sidewalls of the hardmask layer and forming openings in the hardmask layer.Type: GrantFiled: January 10, 2019Date of Patent: September 21, 2021Assignee: Applied Materials, Inc.Inventors: Shan Jiang, Gene Lee, Akhil Mehrotra, Zohreh Hesabi
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Publication number: 20210193481Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.Type: ApplicationFiled: March 10, 2021Publication date: June 24, 2021Inventors: Akhil MEHROTRA, Gene S. LEE, Abhijit PATIL, Shan JIANG, Zohreh HESABI
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Patent number: 10957558Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.Type: GrantFiled: March 24, 2020Date of Patent: March 23, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Akhil Mehrotra, Gene Lee, Abhijit Patil, Shan Jiang, Zohreh Hesabi
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Patent number: 10867795Abstract: A method of etching a hardmask layer formed on a substrate is provided. The method includes supplying an etching gas mixture to a processing region of a processing chamber. A device is disposed in the processing region when the etching gas mixture is supplied to the processing region. The device comprises a substrate and a hardmask layer formed over the substrate. The etching gas mixture comprises a fluorine-containing gas, a silicon-containing gas, and an oxygen-containing gas. The method further includes providing RF power to the etching gas mixture to form a plasma in the processing region. The plasma is configured to etch exposed portions of the hardmask layer.Type: GrantFiled: May 18, 2018Date of Patent: December 15, 2020Assignee: Applied Materials, Inc.Inventors: Nancy Fung, Gene Lee, Hailong Zhou, Zohreh Hesabi, Akhil Mehrotra, Shan Jiang, Abhijit Patil, Chi-I Lang, Larry Gao
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Publication number: 20200227276Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.Type: ApplicationFiled: March 24, 2020Publication date: July 16, 2020Inventors: Akhil MEHROTRA, Gene LEE, Abhijit PATIL, Shan JIANG, Zohreh HESABI
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Publication number: 20200135458Abstract: A method, apparatus and system for processing a wafer in a plasma chamber system, which includes at least a plasma generating element and a biasing electrode, include generating a plasma in the plasma chamber system by applying a source RF source power to the plasma generating element for a first period of time of a pulse period of the RF source power, after the expiration of the first period of time, removing the source RF source power, after a delay after the removal of the RF source power, applying an RF bias signal to the biasing electrode for a second period of time to bias the generated plasma towards the wafer, and after the expiration of the second period of time, removing the RF bias signal from the biasing electrode before a next pulse period of the RF source power. The generated plasma biased toward the wafer is used to process the wafer.Type: ApplicationFiled: October 29, 2018Publication date: April 30, 2020Inventors: AKHIL MEHROTRA, VINAY SHANKAR VIDYARTHI, DAKSH AGARWAL, SAMANEH SADIGHI, JASON KENNEY, RAJINDER DHINDSA
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Patent number: 10636675Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.Type: GrantFiled: September 25, 2018Date of Patent: April 28, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Akhil Mehrotra, Gene Lee, Abhijit Patil, Shan Jiang, Zohreh Hesabi
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Patent number: 10497578Abstract: Methods for etching a bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) to form high aspect ratio features using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features with high aspect ratios through a proper sidewall and bottom management scheme during the bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) open process.Type: GrantFiled: July 22, 2016Date of Patent: December 3, 2019Assignee: Applied Materials, Inc.Inventors: Hailong Zhou, Gene Lee, Abhijit Patil, Shan Jiang, Akhil Mehrotra, Jonathan Kim
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Publication number: 20190221441Abstract: Methods for etching a hardmask layer to transfer features into a material layer using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features through a proper sidewall and bottom management scheme during the hardmask open process. In one embodiment, a method for etching a hardmask layer to form features in the hardmask layer includes supplying an etching gas mixture onto a substrate to etch an exposed portion of a hardmask layer exposed by a patterned photoresist layer disposed on the substrate, switching the etching gas mixture to a deposition gas mixture comprising a silicon containing gas to form a passivation layer on sidewalls of the hardmask layer and forming openings in the hardmask layer.Type: ApplicationFiled: January 10, 2019Publication date: July 18, 2019Inventors: Shan JIANG, Gene LEE, Akhil MEHROTRA, Zohreh HESABI
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Publication number: 20190096695Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.Type: ApplicationFiled: September 25, 2018Publication date: March 28, 2019Inventors: Akhil MEHROTRA, Gene LEE, Abhijit PATIL, Shan JIANG, Zohreh HESABI
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Publication number: 20180337047Abstract: A method of etching a hardmask layer formed on a substrate is provided. The method includes supplying an etching gas mixture to a processing region of a processing chamber. A device substrate is disposed in the processing region when the etching gas mixture is supplied to the processing region. The device substrate comprises a substrate and a hardmask layer formed over the substrate. The etching gas mixture comprises a fluorine-containing gas, a silicon-containing gas, and an oxygen-containing gas. The method further includes providing RF power to the etching gas mixture to form a plasma in the processing region. The plasma is configured to etch exposed portions of the hardmask layer.Type: ApplicationFiled: May 18, 2018Publication date: November 22, 2018Inventors: Nancy FUNG, Gene LEE, Hailong ZHOU, Zohreh HESABI, Akhil MEHROTRA, Shan JIANG, Abhijit PATIL, Chi-I LANG, Larry GAO
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Publication number: 20180025914Abstract: Methods for etching a bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) to form high aspect ratio features using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features with high aspect ratios through a proper sidewall and bottom management scheme during the bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) open process.Type: ApplicationFiled: July 22, 2016Publication date: January 25, 2018Inventors: Hailong ZHOU, Gene LEE, Abhijit PATIL, Shan JIANG, Akhil MEHROTRA, Jonathan KIM