Abstract: Embodiments of the present disclosure provide an etching method with a metal hard mask. The method is performed on a wafer surface and includes sequentially forming a metal hard mask layer and at least one functional film layer on a wafer surface in a direction away from the wafer surface. The method includes performing a plurality of etching processes on the at least one functional layer and the metal hard mask layer sequentially in a direction close to the wafer surface. An etching gas adopted by at least one etching process includes a hydrogen element and a fluorine element. A ratio of a content of the hydrogen element in the etching gas to a content of the fluorine element in the etching gas is smaller than a predetermined threshold to reduce generation of a byproduct of hydrogen fluorine.

Abstract: Provided is an etching method capable of etching even a silicon film that is included in a multi-layered structure by using a resist film or an organic film as a mask, and also capable of integrally etching the silicon film and a silicon oxide film disposed under the silicon film. The etching method which etches the multi-layered structure including the silicon oxide film and the silicon film formed on the silicon oxide film, includes: integrally etching the silicon film and the silicon oxide film included in the multi-layered structure by using a resist film or an organic film as an etching mask and using an etching gas containing a CH2F2 gas as an etching gas, when the silicon film and the silicon oxide film in the multi-layered structure are etched.

Abstract: Provided is an etching method capable of etching even a silicon film that is included in a multi-layered structure by using a resist film or an organic film as a mask, and also capable of integrally etching the silicon film and a silicon oxide film disposed under the silicon film. The etching method which etches the multi-layered structure including the silicon oxide film and the silicon film formed on the silicon oxide film, includes: integrally etching the silicon film and the silicon oxide film included in the multi-layered structure by using a resist film or an organic film as an etching mask and using an etching gas containing a CH2F2 gas as an etching gas, when the silicon film and the silicon oxide film in the multi-layered structure are etched.