Abstract: A method for producing a thermoelectric conversion material composed of a metal A having an alkali metal or alkaline earth metal, a transition metal M, and oxygen O, and represented by AxMyOz, where x, y, and z are valences of the respective elements, includes the steps of: using a massive metal oxide as the thermoelectric conversion material and a salt in a solid, liquid or gaseous state; causing a diffusion reaction between the oxide and the salt; and forming the thermoelectric conversion material having aligned crystal orientation. A production apparatus includes a reactor into which the oxide and the salt are introduced, and a heating means for heating the oxide and the salt within the reactor to promote the diffusion reaction. Thereby, the thermoelectric conversion material having efficiency is produced more simply and at lower cost than a production of the single crystal.

Abstract: A method for producing a thermoelectric conversion material composed of a metal A having an alkali metal or alkaline earth metal, a transition metal M, and oxygen O, and represented by AxMyOz, where x, y, and z are valences of the respective elements, includes the steps of: using a massive metal oxide as the thermoelectric conversion material and a salt in a solid, liquid or gaseous state; causing a diffusion reaction between the oxide and the salt; and forming the thermoelectric conversion material having aligned crystal orientation. A production apparatus includes a reactor into which the oxide and the salt are introduced, and a heating means for heating the oxide and the salt within the reactor to promote the diffusion reaction. Thereby, the thermoelectric conversion material having efficiency is produced more simply and at lower cost than a production of the single crystal.

Abstract: A semiconductor device is provided. The semiconductor device includes a first circuit provided between a power source voltage line and a ground line, including at least two first MOS transistors coupled in parallel and a second circuit, which is provided between the power source voltage line and the ground line, including at least two second MOS transistors coupled in series. The gate length and the gate width of the first MOS transistor are adjusted so that the first MOS transistor has a gate area allowing a first characteristic variation of the first MOS transistor to be substantially equal to a second characteristic variation of the second MOS transistor.

Abstract: A semiconductor device is provided. The semiconductor device includes a first circuit provided between a power source voltage line and a ground line, including at least two first MOS transistors coupled in parallel and a second circuit, which is provided between the power source voltage line and the ground line, including at least two second MOS transistors coupled in series. The gate length and the gate width of the first MOS transistor are adjusted so that the first MOS transistor has a gate area allowing a first characteristic variation of the first MOS transistor to be substantially equal to a second characteristic variation of the second MOS transistor.

Abstract: An object of the present invention is to prevent occurrence of an unconnected terminal during arrangement and connection, shorten the time required for automatic arrangement and connection, improve a yield, and improve the properties of a cell. A recognized object-of-wiring thinning cell (minimum-rule cell) is temporarily replaced with a preferred-rule cell. Since a block has a free region devoid of a cell, an event that a replaced preferred-rule cell interferes with an adjoining one and is not separated from the adjoining one by a predetermined pitch will not take place. Even when the replaced cell interferes with the adjoining one, since the block has the free region devoid of a cell, the cell can be moved to a position at which it will not interfere with the adjoining one. An event that the cell is not separated from the adjoining one by the predetermined pitch will not take place. When all object-of-wiring thinning cells have been treated, reconnection is performed.

Abstract: An object of the present invention is to prevent occurrence of an unconnected terminal during arrangement and connection, shorten the time required for automatic arrangement and connection, improve a yield, and improve the properties of a cell. A recognized object-of-wiring thinning cell (minimum-rule cell) is temporarily replaced with a preferred-rule cell. Since a block has a free region devoid of a cell, an event that a replaced preferred-rule cell interferes with an adjoining one and is not separated from the adjoining one by a predetermined pitch will not take place. Even when the replaced cell interferes with the adjoining one, since the block has the free region devoid of a cell, the cell can be moved to a position at which it will not interfere with the adjoining one. An event that the cell is not separated from the adjoining one by the predetermined pitch will not take place. When all object-of-wiring thinning cells have been treated, reconnection is performed.