Patents by Inventor Akifumi Ooshima

Akifumi Ooshima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polysilicon evaluating method, polysilicon inspection apparatus and method for preparation of thin film transistor
    Patent number: 6933185
    Abstract: The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.
    Type: Grant
    Filed: March 24, 2003
    Date of Patent: August 23, 2005
    Assignee: Sony Corporation
    Inventors: Hiroyuki Wada, Yoshimi Hirata, Ayumu Taguchi, Koichi Tatsuki, Nobuhiko Umezu, Shigeo Kubota, Tetsuo Abe, Akifumi Ooshima, Tadashi Hattori, Makoto Takatoku, Yukiyasu Sugano
  • Apparatus for evaluating polysilicon film
    Patent number: 6798498
    Abstract: A polysilicon film evaluation apparatus is provided which enables objective automatic evaluation of the status of a polysilicon film, as formed to a high accuracy in a contact-free fashion.
    Type: Grant
    Filed: January 18, 2002
    Date of Patent: September 28, 2004
    Assignees: Sony Corporation, Sony Precision Technology Inc.
    Inventors: Hiroyuki Wada, Koichi Tatsuki, Nobuhiko Umezu, Eiji Isomura, Tetsuo Abe, Tadashi Hattori, Akifumi Ooshima, Makoto Uragaki, Yoshiyuki Noguchi, Hiroyuki Tamaki, Masataka Ebe, Tomohiro Ishiguro, Yasuyuki Kato
  • Polysilicon evaluating method, polysilicon inspection apparatus and method for preparation of thin film transistor
    Publication number: 20030183853
    Abstract: The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.
    Type: Application
    Filed: March 24, 2003
    Publication date: October 2, 2003
    Inventors: Hiroyuki Wada, Yoshimi Hirata, Ayumu Taguchi, Koichi Tatsuki, Nobuhiko Umezu, Shigeo Kubota, Tetsuo Abe, Akifumi Ooshima, Tadashi Hattori, Makoto Takatoku, Yukiyasu Sugano
  • Apparatus for evaluating polysilicon film
    Publication number: 20020145733
    Abstract: A polysilicon film evaluation apparatus is provided which enables objective automatic evaluation of the status of a polysilicon film, as formed to a high accuracy in a contact-free fashion.
    Type: Application
    Filed: January 18, 2002
    Publication date: October 10, 2002
    Applicant: Sony Corporation
    Inventors: Hiroyuki Wada, Koichi Tatsuki, Nobuhiko Umezu, Eiji Isomura, Tetsuo Abe, Tadashi Hattori, Akifumi Ooshima, Makoto Uragaki, Yoshiyuki Noguchi, Hiroyuki Tamaki, Masataka Ebe, Tomohiro Ishiguro, Yasuyuki Kato
  • Polysilicon evaluating method, polysilicon inspection apparatus and method for preparation of thin film transistor
    Publication number: 20010038105
    Abstract: The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.
    Type: Application
    Filed: January 8, 2001
    Publication date: November 8, 2001
    Inventors: Hiroyuki Wada, Yoshimi Hirata, Ayumu Taguchi, Koichi Tatsuki, Nobuhiko Umezu, Shigeo Kubota, Tetsuo Abe, Akifumi Ooshima, Tadashi Hattori, Makoto Takatoku, Yukiyasu Sugano