Abstract: Disclosed is an ultrasonic probe comprising: CMUT cells (13) that mutually convert ultrasonic waves and electrical signals; a semiconductor substrate (15) that has a plurality of the CMUT cells (13) formed on the surface thereof; an acoustic lens (3) that is provided on the front face side of the CMUT cells (13); and a backing layer (5) that is provided on the rear face side of the semiconductor substrate (15). The backing layer (5) is formed by a first backing layer (27) that makes contact with the semiconductor substrate, and a second backing layer (29) that is provided on the rear face side of the backing layer (27). The acoustic impedance of the backing layer (27) is set based on the sheet thickness of the semiconductor substrate (15). The backing layer (29) is formed by attenuating material capable of attenuating ultrasonic waves transmitted through the backing layer (27).

Abstract: An ultrasonic probe and an ultrasonic diagnosis device which can improve electrical safety for an operator are provided. The ultrasonic probe 2 has an insulating portion 62 between a mounting board 43 and a case 25. Since electrical leakage from the internal device of the ultrasonic probe 2 can be prevented, electrical safety of the ultrasonic probe 2 for the operator can be improved. A conductive film 61 is provided on the ultrasonic wave radiation side of a cMUT chip 20, and a conductive member 63 is provided along the insulating member 62. A conductive film 61 and a conductive member 63 are connected by a conductive member 64. A closed space having a ground potential is formed by the conductive film 61, the conductive member 63 and a coaxial cable 55 connected to ground. Main components or the body circuits of the ultrasonic probe 2 are contained in the closed space having the ground potential and shielded electrically from the outside.

Abstract: An ultrasonic probe (2) comprises a cMUT chip (20), which has a plurality of vibration elements whose electromechanical coupling coefficient or the sensitivity changes depending on a bias voltage, and transmits/receives an ultrasonic wave; an acoustic lens (26) provided on the ultrasonic wave radiation side of the cMUT chip (20); a backing layer (22) provided on the back side of the cMUT chip (20) for absorbing propagation of the ultrasonic wave; an electric wiring portion (flexible substrate (72)), which is provided from the peripheral portion of the cMUT chip (20) to the side face of the backing layer (22) and has a signal pattern connected with the electrode of the cMUT chip (20) arranged thereon; and a housing (ultrasonic probe cover (25)) for containing the cMUT chip (20), the acoustic lens (26), the backing layer (22) and the electric wiring portion (flexible substrate (72)).

Abstract: In order to obtain a high-resolution ultrasound diagnostic image while reducing the back side reflection of a ultrasound irradiated to the side opposite to the ultrasound transmission direction of an ultrasound transmission/reception device, disclosed is an ultrasound probe, wherein a substrate is provided thereon with a cavity, insulation layers having the cavity therebetween, and an upper layer electrode and a lower layer electrode having the cavity and the insulation layers therebetween, so as to form an ultrasound vibration element, the substrate is held by a backing with a low-modulus member therebetween, and a direct voltage and a alternating voltage are applied between the electrodes to vibrate the ultrasound vibration element, and wherein a mechanical impedance by the substrate and the low-modulus member has a substantially equal value as an acoustic impedance of the backing.

Abstract: An ultrasonic probe including a cMUT chip that has plural oscillation elements whose electromechanical coupling coefficient or sensitivity varies in accordance with a bias voltage and transmits/receives an ultrasonic wave, an acoustic lens provided at an ultrasonic wave transmission/reception side of the cMUT chip, a backing layer provided to the opposite surface of the cMUT chip to the acoustic lens, and a substrate provided between the backing layer and the cMUT chip. The ultrasonic probe further includes thermal stress suppressing means for suppressing thermal stress occurring due to the difference in linear expansion coefficient caused by temperature variation between the substrate and the backing layer.

Abstract: Disclosed is an ultrasonic probe wherein the warpage of a CMUT due to thermal stress produced at the joint between a backing layer and the CMUT is minimized, thereby improving the durability of the bond between the CMUT and the backing layer. To accomplish this the ultrasonic probe is provided with: a CMUT (20) having vibratory elements that change the electromechanical coupling coefficient or sensitivity according to the bias voltage to be applied; a backing layer (22) adhered to the rear side of the ultrasonic transmission surface of the CMUT (20); and a thermal-stress balancing member (24) to be adhered to the backing layer (22) while being disposed facing the CMUT (20) in such a manner that the backing layer (22) is sandwiched therebetween so as to minimize the warpage of the CMUT (20) due to thermal stress produced between the CMUT (20).

Abstract: In order to provide an ultrasonic probe capable of suppressing the influence of multiple reflections occurring on the interface of a transducer with a CMUT chip and a backing layer, an ultrasonic probe of the present invention has a structure where an acoustic lens 14, transducers 11-1 to 11-m, and a backing layer 12 are laminated. Each of the transducers 11-1 to 11-m has a CMUT chip, and the backing layer 12 is formed of a material with a value of substantially the same acoustic impedance as the acoustic lens 14.

Abstract: An ultrasonic probe is provided with a CMUT chip having a plurality of transducer elements that change electromechanical coupling coefficients or sensitivities in accordance with a bias voltage to transmit and receive ultrasonic waves, an electric conducting layer formed on the ultrasonic irradiation side of the CMUT chip, an acoustic lens arranged on the ultrasonic irradiation side of the CMUT chip, an insulating layer formed in the direction opposite to the ultrasonic irradiation side of the acoustic lens, a housing unit that stores the CMUT chip in which the electric conducting layer and the insulating layer are fixed with an adhesive and the acoustic lens, wherein the insulating layer is formed by the material that includes at least either silicon oxide or paraxylene to prevent a solvent of the adhesive from soaking into the adhered portion.

Abstract: An ultrasonic probe including a cMUT chip that has plural oscillation elements whose electromechanical coupling coefficient or sensitivity varies in accordance with a bias voltage and transmits/receives an ultrasonic wave, an acoustic lens provided at an ultrasonic wave transmission/reception side of the cMUT chip, a backing layer provided to the opposite surface of the cMUT chip to the acoustic lens, and a substrate provided between the backing layer and the cMUT chip. The ultrasonic probe further includes thermal stress suppressing means for suppressing thermal stress occurring due to the difference in linear expansion coefficient caused by temperature variation between the substrate and the backing layer.

Abstract: An ultrasonic probe and an ultrasonic diagnosis device which can improve electrical safety for an operator are provided. The ultrasonic probe 2 has an insulating portion 62 between a mounting board 43 and a case 25. Since electrical leakage from the internal device of the ultrasonic probe 2 can be prevented, electrical safety of the ultrasonic probe 2 for the operator can be improved. A conductive film 61 is provided on the ultrasonic wave radiation side of a cMUT chip 20, and a conductive member 63 is provided along the insulating member 62. A conductive film 61 and a conductive member 63 are connected by a conductive member 64. A closed space having a ground potential is formed by the conductive film 61, the conductive member 63 and a coaxial cable 55 connected to ground. Main components or the body circuits of the ultrasonic probe 2 are contained in the closed space having the ground potential and shielded electrically from the outside.

Abstract: Provided is an ultrasonic probe including: a cMUT chip having a plurality of vibration elements whose electromechanical coupling coefficient or sensitivity is changed according to a bias voltage and transmitting and receiving ultrasonic waves; an acoustic lens arranged above the cMUT chip: and a backing layer arranged below the cMUT chip. Electric leakage preventing means is provided at the ultrasonic wave transmission/reception surface side of the acoustic lens or between the acoustic lens and the cMUT chip. The electric leakage preventing means is, for example, an insulating layer such as a ground layer. By using such a structure, it is possible to provide an ultrasonic probe capable of preventing electric leakage from the ultrasonic probe to an object to be examined so as to improve the electric safety and an ultrasonic diagnostic apparatus using the probe.

Abstract: A method for manufacturing an optical fiber includes the steps of covering an outer periphery of a first glass (11) having a first softening temperature and a non-axisymmetric structure by a second glass (12, 13) having a second softening temperature which is lower than the first softening temperature, heating the first and second glasses (11, 12, 13) for fusion together to thereby obtain an optical fiber preform; and drawing the preform to the optical fiber.

Abstract: An optical transmission medium includes a GI optical fiber that is made of silica glass. The GI optical fiber includes a core having a graded-index refractive index profile and a cladding formed around the core. The GI optical fiber is bent by equal to or more than a quarter turn with a curvature radius equal to or larger than 4 mm and equal to or smaller than 10 mm.

Abstract: A mode field diameter of an optical fiber at a wavelength of 1300 nm is equal to or larger than 5.4 ?m. A light of a wavelength of 1250 nm is propagated through the optical fiber in a single mode. A bending loss of the optical fiber with a bending radius of 1 mm at the wavelength of 1300 nm is equal to or lower than 1 dB/turn.

Abstract: An optical fiber includes a core and a cladding which are made from silica glass, allows single mode transmission at a wavelength of 1100 nm, and has a mode field diameter of not less than 4 ?m at a wavelength of 1100 nm, and a bending loss of not more than 1 dB per turn with a curvature radius of 1 mm at a wavelength of 1100 nm.

Abstract: A mode field diameter of an optical fiber at a wavelength of 1300 nm is equal to or larger than 5.4 ?m. A light of a wavelength of 1250 nm is propagated through the optical fiber in a single mode. A bending loss of the optical fiber with a bending radius of 1 mm at the wavelength of 1300 nm is equal to or lower than 1 dB/turn.

Abstract: Provided is a single-mode optical fiber that propagates an optical signal at a wavelength of 1310 nm, in single-mode operation; has a mode field diameter of 6.6 ?m or more at the wavelength of 1310 nm; and a macro bending loss of at most 0.1 dB/10 turns with a bending radius of 7.5 mm at a wavelength of 1650 nm.

Abstract: Provided is a single-mode optical fiber that propagates an optical signal at a wavelength of 1310 nm, in single-mode operation; has a mode field diameter of 6.6 ?m or more at the wavelength of 1310 nm; and a macro bending loss of at most 0.1 dB/10 turns with a bending radius of 7.5 mm at a wavelength of 1650 nm.

Abstract: An optical fiber includes a core and a cladding which are made from silica glass, allows single mode transmission at a wavelength of 1100 nm, and has a mode field diameter of not less than 4 ?m at a wavelength of 1100 nm, and a bending loss of not more than 1 dB per turn with a curvature radius of 1 mm at a wavelength of 1100 nm.