Abstract: The photosensitive resin composition of the present invention contains a vinyl-based (co)polymer (I) obtained by polymerizing a monomer mixture (?) containing a vinyl-based monomer (a) having a phenolic hydroxyl group, a vinyl-based copolymer (II) having a weight-average molecular weight of 15,000 to 120,000, obtained by polymerizing a monomer mixture (?) containing a vinyl-based monomer (b) represented by CH2?CR1COO(R2O)kR3 (wherein R1=a hydrogen atom or a methyl group, R2=a hydrocarbon group having a carbon number of 1 to 4, R3=a hydrogen atom or a methyl group, and k=1 to 90) and a carboxyl group-containing vinyl-based monomer (c), a photosensitive substance (III), and a compound (IV) which is a specific aromatic polyhydroxy compound.

Abstract: A resist polymer (Y?), which is used as a resist resin in DUV excimer laser lithography, electron beam lithography, and the like, contains a polymer (Y) comprising: a constituent unit (A) having a lactone skeleton; a constituent unit (B) having an acid-eliminable group; a constituent unit (C) having a hydrophilic group; and a constituent unit (E) having a structure represented by formula (1), wherein a content of the constituent unit (E) is 0.3 mol % or more based on the total number of the constituent units of the resist polymer (Y?): where L is a divalent linear, branched, or cyclic C1-20 hydrocarbon group which may have a substituent and/or a heteroatom; R11 is a g-valent linear, branched, or cyclic C1-20 hydrocarbon group which may have a substituent and/or a heteroatom; and g represents an integer of 1 to 24.

Abstract: The photosensitive resin composition of the present invention contains a vinyl-based (co)polymer (I) obtained by polymerizing a monomer mixture (?) containing a vinyl-based monomer (a) having a phenolic hydroxyl group, a vinyl-based copolymer (II) having a weight-average molecular weight of 15,000 to 120,000, obtained by polymerizing a monomer mixture (?) containing a vinyl-based monomer (b) represented by CH2?CR1COO(R2O)kR3 (wherein R1=a hydrogen atom or a methyl group, R2=a hydrocarbon group having a carbon number of 1 to 4, R3=a hydrogen atom or a methyl group, and k=1 to 90) and a carboxyl group-containing vinyl-based monomer (c), a photosensitive substance (III), and a compound (IV) which is a specific aromatic polyhydroxy compound.

Abstract: The present invention is related to a photosensitive resin composition containing: a vinyl-based copolymer (I) obtained by polymerizing a monomer mixture containing a monomer (a) having a phenolic hydroxyl group and a carboxyl group-containing vinyl monomer (b); a quinonediazide compound (II) and a compound (III) represented by the following formula (5), and to a photosensitive dry film and a method for forming a patter by using the photosensitive resin composition.

Abstract: A photosensitive resin composition comprising: a vinyl-based polymer (I) obtained by polymerizing a monomer mixture containing a monomer (a) having a phenolic hydroxyl group; a vinyl-based polymer (II) obtained by polymerizing a monomer mixture containing a carboxyl group-containing vinyl monomer (b), and having a weight average molecular weight of 20,000 to 100,000, provided that the vinyl-based polymer (I) is excluded; a quinonediazide compound (III); and a compound (IV) represented by following formula (5). [In the formula, Y is a hydrocarbon group of 1 to 6 carbon atoms; l and m are each independently an integer of 1 to 3; n is 1 or 2; p and q are each independently 0 or 1.].

Abstract: To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like.

Abstract: The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.

Abstract: A resist polymer (Y?), which is used as a resist resin in DUV excimer laser lithography, electron beam lithography, and the like, contains a polymer (Y) comprising: a constituent unit (A) having a lactone skeleton; a constituent unit (B) having an acid-eliminable group; a constituent unit (C) having a hydrophilic group; and a constituent unit (E) having a structure represented by the following formula (1), wherein a content of the constituent unit (E) is 0.3 mol % or more based on the total number of the constituent units of the resist polymer (Y?): [Chemical formula 1] in the formula (1), L is a divalent linear, branched, or cyclic C1-20 hydrocarbon group which may have a substituent and/or a heteroatom; R11 is a g-valent linear, branched, or cyclic C1-20 hydrocarbon group which may have a substituent and/or a heteroatom; and g represents an integer of 1 to 24.

Abstract: A resist polymer (Y?), which is used as a resist resin in DUV excimer laser lithography, electron beam lithography, and the like, contains a polymer (Y) comprising: a constituent unit (A) having a lactone skeleton; a constituent unit (B) having an acid-eliminable group; a constituent unit (C) having a hydrophilic group; and a constituent unit (E) having a structure represented by the following formula (1), wherein a content of the constituent unit (E) is 0.3 mol % or more based on the total number of the constituent units of the resist polymer (Y?): in the formula (1), L is a divalent linear, branched, or cyclic C1-20 hydrocarbon group which may have a substituent and/or a heteroatom; R11 is a g-valent linear, branched, or cyclic C1-20 hydrocarbon group which may have a substituent and/or a heteroatom; and g represents an integer of 1 to 24.

Abstract: A photosensitive resin composition comprising: a vinyl-based polymer (I) obtained by polymerizing a monomer mixture containing a monomer (a) having a phenolic hydroxyl group; a vinyl-based polymer (II) obtained by polymerizing a monomer mixture containing a carboxyl group-containing vinyl monomer (b), and having a weight average molecular weight of 20,000 to 100,000, provided that the vinyl-based polymer (I) is excluded; a quinonediazide compound (III); and a compound (IV) represented by following formula (5). [In the formula, Y is a hydrocarbon group of 1 to 6 carbon atoms; 1 and m are each independently an integer of 1 to 3; n is 1 or 2; p and q are each independently 0 or 1.

Abstract: The present invention is related to a photosensitive resin composition containing: a vinyl-based copolymer (I) obtained by polymerizing a monomer mixture containing a monomer (a) having a phenolic hydroxyl group and a carboxyl group-containing vinyl monomer (b); a quinonediazide compound (II) and a compound (III) represented by the following formula (5), and to a photosensitive dry film and a method for forming a patter by using the photosensitive resin composition.

Abstract: To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like.

Abstract: The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.

Abstract: The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.

Abstract: To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like.

Abstract: To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like.

Abstract: The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.

Abstract: The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.

Abstract: To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like.

Abstract: A resist polymer (Y?), which is used as a resist resin in DUV excimer laser lithography, electron beam lithography, and the like, contains a polymer (Y) comprising: a constituent unit (A) having a lactone skeleton; a constituent unit (B) having an acid-eliminable group; a constituent unit (C) having a hydrophilic group; and a constituent unit (E) having a structure represented by the following formula (1), wherein a content of the constituent unit (E) is 0.3 mol % or more based on the total number of the constituent units of the resist polymer (Y?): [Chemical formula 1] in the formula (1), L is a divalent linear, branched, or cyclic C1-20 hydrocarbon group which may have a substituent and/or a heteroatom; R11 is a g-valent linear, branched, or cyclic C 120 hydrocarbon group which may have a substituent and/or a heteroatom; and g represents an integer of 1 to 24.