Patents by Inventor Akihide Igari

Akihide Igari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5382385
    Abstract: A varistor material having a non-linear coefficient of at least 30 and a varistor voltage of at least 800 V/mm is disclosed. The varistor is produced by a method including commingling an admixture of ZnO and a manganese compound while preventing the admixture from contacting with a surface containing an element belonging to group IIIb of the Periodic Table. The resulting mixture is calcined and then pulverized while preventing the contact with a IIIb element-containing surface to obtain a pulverized product having a content of impurity compounds of a IIIb element of not greater than 20 ppm by weight. The pulverized product is molded and sintered at such a temperature as to obtain the varistor formed from particles with an average particle size of not greater than 5 .mu.m.
    Type: Grant
    Filed: March 24, 1992
    Date of Patent: January 17, 1995
    Assignee: Somar Corporation
    Inventors: Hideo Ochi, Akihide Igari, Masaaki Toyoda, Zenbee Nakagawa
  • Patent number: 5296169
    Abstract: A varistor having a non-linear coefficient of at least 40 and improved stability for DC stress is produced by a method including a step of mixing ZnO powder with a solvent solution of Mn and Pb compounds, a step of calcining the resultig mixture, and a step of pulverizing the calcined product to obtain a pulverized product. These steps are performed while preventing the contamination with a Group IIIb or Ia element, so that the pulverized product has MnO and PbO contents of 3-7 mole % and 0.003-0.01 mole %, respectively, and a content of impurity compounds of a IIIb or Ia element of not greater than 20 ppm by weight. The pulverized product is molded and sintered to obtain the varistor.
    Type: Grant
    Filed: September 9, 1992
    Date of Patent: March 22, 1994
    Assignee: Somar Corporation
    Inventors: Hideo Ochi, Akihide Igari, Masaaki Toyoda, Zenbee Nakagawa
  • Patent number: 5116542
    Abstract: A varistor material is disclosed which has a composition consisting essentially of 93-97 mole % of ZnO and 3-7 mole % of MnO, a non-linear coefficient .alpha. of at least 20 and such a bulk density as to provide a porosity of greater than 15% but not greater than 50%, wherein the porosity is defined as follows:Porosity (%)=(1-d/d.sub.0).times.100wherein d represents the bulk density and d.sub.0 represents the theoretical density of the single phase pure ZnO. The varistor material is produced by sintering a mixture containing ZnO powder and 3-7 mole %, based on ZnO+MnO, of a maganese compound at a temperature of 1100.degree.-1350.degree. C. under a condition so that the resulting sintered body has the above porosity.
    Type: Grant
    Filed: July 12, 1990
    Date of Patent: May 26, 1992
    Assignee: Somar Corporation
    Inventors: Hideo Ochi, Akihide Igari, Masaaki Toyoda
  • Patent number: 5076979
    Abstract: A process for the production of a varistor material having a nonlinear index (.alpha.) of at least 20, which comprises adding a manganese compound to zinc oxide; heating the obtained mixture in the form of a powder in the atomosphere at 1050.degree. to 1150.degree. C.; grinding the material to give a particle size of 150 mesh or below; molding the powder into a desired shape; and sintering the same at 1200.degree. to 1350.degree. C.; is disclosed.
    Type: Grant
    Filed: June 14, 1989
    Date of Patent: December 31, 1991
    Assignee: Somar Corporation
    Inventors: Hideo Ochi, Akihide Igari, Zenbee Nakagawa
  • Patent number: 5073302
    Abstract: A varistor material comprising two crystalline phases of ZnO and ZnMn.sub.2 O.sub.4, wherein Zn and Mn are present at such a ratio that 3 to 7% by mol of ZnO is contained per 100% by mol of ZnO+MnO and the nonlinear index (.alpha.) of the varistor properties is at least 10; and a process for the production of the same, which comprises adding a manganese compound to ZnO at such a ratio as to give a content of MnO, sintering the mixture at 1100.degree. to 1350.degree. C., and further annealing the obtained sintered material at a temperature lower than the sintering temperature by at least 50.degree. C. and higher than 1000.degree. C. are disclosed.
    Type: Grant
    Filed: June 14, 1989
    Date of Patent: December 17, 1991
    Assignee: Somar Corporation
    Inventors: Akihide Igari, Zenbee Nakagawa