Patents by Inventor Akihide IWASE

Akihide IWASE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bismuth-vanadate-laminate manufacturing method and bismuth-vanadate laminate
    Patent number: 10320005
    Abstract: A new BiVO4-laminate manufacturing method and BiVO4 laminate are provided. A bismuth-vanadate laminate is manufactured as follows: a substrate that can be heated by microwaves is disposed inside a precursor solution containing a vanadium salt and a bismuth salt, microwave-activated chemical bath deposition (MW-CBD) is used to form a bismuth-vanadate layer on the substrate, and a firing process is performed as necessary. A bismuth-vanadate laminate manufactured in this way is suitable for use as a photocatalyst or photoelectrode.
    Type: Grant
    Filed: March 4, 2014
    Date of Patent: June 11, 2019
    Assignees: TOKYO UNIVERSITY OF SCIENCE FOUNDATION, MITSUI CHEMICALS, INC., JAPAN TECHNOLOGICAL RESEARCH ASSOCIATION OF ARTIFICIAL PHOTOSYNTHETIC CHEMICAL PROCESS
    Inventors: Akihiko Kudo, Qingxin Jia, Akihide Iwase
  • BISMUTH-VANADATE-LAMINATE MANUFACTURING METHOD AND BISMUTH-VANADATE LAMINATE
    Publication number: 20160028092
    Abstract: A new BiVO4-laminate manufacturing method and BiVO4 laminate are provided. A bismuth-vanadate laminate is manufactured as follows: a substrate that can be heated by microwaves is disposed inside a precursor solution containing a vanadium salt and a bismuth salt, microwave-activated chemical bath deposition (MW-CBD) is used to form a bismuth-vanadate layer on the substrate, and a firing process is performed as necessary. A bismuth-vanadate laminate manufactured in this way is suitable for use as a photocatalyst or photoelectrode.
    Type: Application
    Filed: March 4, 2014
    Publication date: January 28, 2016
    Inventors: Akihiko KUDO, Qingxin JIA, Akihide IWASE