Abstract: An electrode material includes an active material particle and a solid electrolyte particle. The solid electrolyte particle includes Li, M, and X, wherein M is at least one selected from the group consisting of metal elements excluding Li and metalloid elements, and X is at least one selected from the group consisting of F, Cl, Br, and I. The ratio R1 of the volume of the active material particle to the sum of the volume of the active material particle and the volume of the solid electrolyte particle is greater than or equal to 10% and less than 65% when expressed as percentage. The ratio R2 of the average particle diameter of the active material particle to the average particle diameter of the solid electrolyte particle is greater than or equal to 0.5 and less than or equal to 3.4.

Abstract: A photoelectric conversion module (10) comprises a photoelectric conversion cell (12) and a grid electrode (31) provided in the photoelectric conversion cell (12) on a substrate. The photoelectric conversion cell (12) includes a first electrode layer (22), a second electrode layer (24), a photoelectric conversion layer (26) between the first electrode layer (22) and the second electrode layer (24). The second electrode layer (24) is formed of a transparent electrode layer located on opposite side of the photoelectric conversion layer (26) to the substrate (20). The grid electrode (31) is provided between the photoelectric conversion layer (26) and the transparent electrode layer.

Abstract: A photoelectric conversion module (10) comprises a photoelectric conversion cell (12) including a first electrode layer (22), a second electrode layer (24), and a photoelectric conversion layer (26); and a plurality of grid electrodes (31). At least one of the first electrode layer and the second electrode layer is a transparent electrode layer. The transparent electrode layer includes a first region and a second region. The second region has sheet resistance smaller than sheet resistance in the first region, a film thickness larger than a film thickness in the first region, or transmittance smaller than transmittance in the first region. An interval between the grid electrodes adjacent to each other in the first direction in the first region is smaller than an interval between the grid electrodes adjacent to each other in the first direction in the second region.

Abstract: A photoelectric conversion module (10) comprises a photoelectric conversion cell (12) and a grid electrode (31) provided in the photoelectric conversion cell (12) on a substrate. The photoelectric conversion cell (12) includes a first electrode layer (22), a second electrode layer (24), a photoelectric conversion layer (26) between the first electrode layer (22) and the second electrode layer (24). The second electrode layer (24) is formed of a transparent electrode layer located on opposite side of the photoelectric conversion layer (26) to the substrate (20). The grid electrode (31) is provided between the photoelectric conversion layer (26) and the transparent electrode layer.

Abstract: The present invention addresses the problem of providing: a stainless steel which is provided with gas corrosion resistance suitable for substrates of compound thin film solar cells without requiring a surface treatment such as coating or plating; a method for producing this stainless steel; and a compound thin film solar cell which uses this stainless steel as a substrate. In order to solve the above-described problem, the present invention is characterized by forming an Fe—Cr—Al oxide film which has a film thickness of 15 nm or less and contains, in mass %, 0.03% or less of C, 2% or less of Si, 2% or less of Mn, 10-25% of Cr, 0.05% or less of P, 0.01% or less of S, 0.03% or less of N and 0.5-5% of Al, with the balance made up of Fe and unavoidable impurities, and wherein the maximum value of the Al concentration is 30% by mass or more and the Fe concentration at the depth of 2 nm from the surface is 30% or less in the profile of cation fractions excluding O and C ions.

Abstract: The method of manufacturing a compound thin-film photovoltaic cell includes preparing a metal substrate, whose main constituent is iron, containing aluminium (Al) and chromium (Cr), and forming an insulating layer on an element forming surface of the metal substrate by baking an insulating material; depositing first electrode layer on the insulating layer; depositing a compound light absorption layer on the first electrode layer; and depositing a second electrode layer on the compound light absorption layer, wherein in the forming the insulating layer, an alumina layer is formed at least on a back surface of the metal substrate by thermal oxidation while baking the insulating material.

Abstract: The method of manufacturing a compound thin-film photovoltaic cell includes preparing a metal substrate, whose main constituent is iron, containing aluminium (Al) and chromium (Cr), and forming an insulating layer on an element forming surface of the metal substrate by baking an insulating material; depositing first electrode layer on the insulating layer; depositing a compound light absorption layer on the first electrode layer; and depositing a second electrode layer on the compound light absorption layer, wherein in the forming the insulating layer, an alumina layer is formed at least on a back surface of the metal substrate by thermal oxidation while baking the insulating material.

Abstract: An exhaust gas control apparatus includes a control device controlling a urea addition valve for adding urea from an upstream side of a NOx reduction catalyst. The control device obtains an ammonia adsorption amount distribution through the NOx reduction catalyst. When an ammonia adsorption amount in a predetermined part on a downstream side equals or exceeds a predetermined threshold, the control device controls the urea addition valve to stop the urea supply or reduce the amount thereof. The urea addition valve is controlled based on an adsorption amount distribution obtained from a model on which the catalyst is divided into cells such that an ammonia adsorption amount in a first cell positioned furthest upstream equals or exceeds a predetermined threshold close to a saturation adsorption amount and an ammonia adsorption amount in a second cell positioned downstream of the first cell reaches a predetermined target value smaller than the threshold.

Abstract: A thin-film photovoltaic cell includes a metal substrate; a glass insulating layer formed on the metal substrate; a first electrode layer deposited on the glass insulating layer; a thin-film light absorption layer deposited on the first electrode layer; and a second electrode layer deposited on the thin-film light absorption layer, wherein the coefficient of thermal expansion of the glass insulating layer is larger than the coefficient of thermal expansion of the metal substrate for a predetermined value.

Abstract: The method of manufacturing a compound thin-film photovoltaic cell, includes preparing a metal substrate, whose main constituent is iron, containing aluminium (Al) and chromium (Cr), and forming an alumina layer at least on an element forming surface of the metal substrate by thermal oxidation; forming an insulating layer on the alumina layer; depositing a first electrode layer on the insulating layer; depositing a compound light absorption layer on the first electrode layer; and depositing a second electrode layer on the compound light absorption layer.

Abstract: An exhaust gas control apparatus includes a control device controlling a urea addition valve for adding urea from an upstream side of a NOx reduction catalyst. The control device obtains an ammonia adsorption amount distribution through the NOx reduction catalyst. When an ammonia adsorption amount in a predetermined part on a downstream side equals or exceeds a predetermined threshold, the control device controls the urea addition valve to stop the urea supply or reduce the amount thereof. The urea addition valve is controlled based on an adsorption amount distribution obtained from a model on which the catalyst is divided into cells such that an ammonia adsorption amount in a first cell positioned furthest upstream equals or exceeds a predetermined threshold close to a saturation adsorption amount and an ammonia adsorption amount in a second cell positioned downstream of the first cell reaches a predetermined target value smaller than the threshold.

Abstract: A method of manufacturing a thin film semiconductor device is disclosed. The method includes the steps of: forming a light reflection and absorption layer for reflecting and absorbing light on a substrate; patterning the light reflection and absorption layer in a prescribed shape; forming an insulating film covering the patterned light reflection and absorption layer; forming a semiconductor thin film containing a polycrystalline grain on the insulating film; and laser annealing the semiconductor thin film by irradiating pulse oscillated laser light to crystallize the semiconductor thin film. The laser annealing step includes a heating process, and a cooling process.

Abstract: The present invention relates to a method for manufacturing a thin film device. The thin film device is manufactured by bonding a second substrate (106) to a thin film device layer (103) provided on a protective layer (102) formed on a first substrate (101) through a first adhesive layer (105), then, completely or partly removing the first substrate (101) in accordance with a process including at least one process of a chemical process and a mechanical polishing process, bonding a third substrate (109) to the exposed protective layer (102) or the protective layer (102) covered with the partly removed first substrate (101) through a second adhesive layer (108) and separating or removing the second substrate (106). Thus, the thin film device suitable for a light and thin display panel is manufactured without deteriorating a ruggedness.

Abstract: A difference in brightness between a portion, at which fiber overlaps, and any other portion of a plastic substrate in which a fiber cloth is contained is eliminated by setting the axis of the fiber and the optical axis of a polarizing plate so as to be coaxial with each other. Thereby, a normal displaying can be effected.

Abstract: A method of manufacturing a thin film semiconductor device is disclosed. The method includes the steps of: forming a light reflection and absorption layer for reflecting and absorbing light on a substrate; patterning the light reflection and absorption layer in a prescribed shape; forming an insulating film covering the patterned light reflection and absorption layer; forming a semiconductor thin film containing a polycrystalline grain on the insulating film; and laser annealing the semiconductor thin film by irradiating pulse oscillated laser light to crystallize the semiconductor thin film. The laser annealing step includes a heating process, and a cooling process.

Abstract: A laser annealing device (10) includes a laser oscillator (12), radiating a pulsed laser light beam of a preset period, and an illuminating optical system (15) for illuminating a pulsed laser light beam to an amorphous silicon film (1). The illuminating optical system (15) manages control for moving a laser spot so that a plural number of light pulses will be illuminated on the same location on the amorphous silicon film (1). The laser oscillator (12) radiates a laser light beam of a pulse generation period shorter than the reference period. The reference period is a time interval as from the radiation timing of illumination of a pulsed laser light beam on the surface of the film (1) until the timing of reversion of the substrate temperature raised due to the illumination of the laser light beam to the original substrate temperature.

Abstract: A thin-film device is fabricated by forming a protective layer and a thin-film device layer one by one on a first substrate and bonding a second substrate on the thin-film device layer via a first adhesive layer or a coating layer and first adhesive layer, removing the first substrate at least in a part thereof by etching with a chemical solution, bonding the protective layer, which covers the thin-film device layer on a side of the first substrate, to a third substrate via a second adhesive layer, and removing the second substrate. The protective layer is formed of at least two layers having resistance to the chemical solution used upon removal of the first substrate.

Abstract: The present invention relates to a method for manufacturing a thin film device. The thin film device is manufactured by bonding a second substrate (106) to a thin film device layer (103) provided on a protective layer (102) formed on a first substrate (101) through a first adhesive layer (105), then, completely or partly removing the first substrate (101) in accordance with a process including at least one process of a chemical process and a mechanical polishing process, bonding a third substrate (109) to the exposed protective layer (102) or the protective layer (102) covered with the partly removed first substrate (101) through a second adhesive layer (108) and separating or removing the second substrate (106). Thus, the thin film device suitable for a light and thin display panel is manufactured without deteriorating a ruggedness.

Abstract: A thin-film device is fabricated by forming a protective layer and a thin-film device layer one by one on a first substrate and bonding a second substrate on the thin-film device layer via a first adhesive layer or a coating layer and first adhesive layer, removing the first substrate at least in a part thereof by etching with a chemical solution, bonding the protective layer, which covers the thin-film device layer on a side of the first substrate, to a third substrate via a second adhesive layer, and removing the second substrate. The protective layer is formed of at least two layers having resistance to the chemical solution used upon removal of the first substrate.

Abstract: The present invention relates to a method for manufacturing a thin film device. The thin film device is manufactured by bonding a second substrate (106) to a thin film device layer (103) provided on a protective layer (102) formed on a first substrate (101) through a first adhesive layer (105), then, completely or partly removing the first substrate (101) in accordance with a process including at least one process of a chemical process and a mechanical polishing process, bonding a third substrate (109) to the exposed protective layer (102) or the protective layer (102) covered with the partly removed first substrate (101) through a second adhesive layer (108) and separating or removing the second substrate (106). Thus, the thin film device suitable for a light and thin display panel is manufactured without deteriorating a ruggedness.