Abstract: A bonding tool has a head portion made essentially of vapor-deposited diamond, wherein a principal diamond crystal plane forming a head face is a (111) plane. Such a head face has high hardness and a good wear resistance. In order to improve the toughness of a bonding head which is mainly made of vapor-deposited diamond, a portion or ply forming the head face consists essentially of high-purity diamond, and another portion or ply supporting the head face consists essentially of low-purity diamond. The head face has a high rigidity, while the portion supporting the head face has a high toughness. In order to provide a bonding head portion which is mainly made of vapor-deposited diamond with electrical conductivity, a first portion or ply forming a head face consists essentially of polycrystalline diamond containing a relatively small amount of dopant, and another portion or ply supporting the first portion or ply contains a large amount of dopant.

Abstract: The present invention aims at improving a hot filament CVD method and apparatus capable of enlarging the diamond-forming area in relatively easy manner and utilizing effectively the capacity of a thermoelectron radiation material and provides a process and apparatus for producing diamond with excellent productivity as well as a compact size of apparatus, which can be applied to production on a commercial scale. The feature of the present invention consists in subjecting to decomposition, excitation and activation by a thermoelectron radiation material heated at a high temperature a raw material gas comprising at least one carbon source selected from the group consisting of hydrocarbons, hydrocarbons containing oxygens and/or nitrogens in the bonded groups, carbon oxides, halogenated hydrocarbons and solid carbon, hydrogen and optionally any one of inert gases of Group VIII elements, H.sub.2 O, O.sub.2 and F.sub.

Abstract: An insulating member has an insulating layer in the form of a thin ceramic plate made of at least one of SiC, Si.sub.3 N.sub.4, AlN and Al.sub.2 O.sub.3 ad having a thickness not less than 0.1 mm and not more than 2.0 mm, and cushioning layers provided on both sides of the insulating layer through brazing alloy for relieving thermal stress. An electric part can be made of such an insulating member. The insulating member is disposed between a conductive substrate and a conductive member and brazed thereto.

Abstract: A bonding tool for TAB, used in the production of semiconductor chips, which is provided with, at the end thereof, a substrate consisting of a member selected from the group consisting of sintered compacts of Si or Si.sub.3 N.sub.4 as a predominant component, sintered compacts of SiC as a predominant component, sintered compacts of AlN as a predominant component and composite compacts thereof, the substrate being coated with polycrystalline diamond deposited by gaseous phase synthesis method.

Abstract: The present invention relates to gaseous phase synthesized diamond and a method for synthesizing the same. In order to obtain crystalline diamond having remarkably high completeness and hardly containing carbon having a construction other than that of diamond, raw material gases are thermally activated by a thermoelectron-radiating material heated at an extremely high temperature, the thermoelectron-radiating material being connected to a negative pole while a substrate to be coated is connected to a positive pole, by the use of a direct current power source, a plasma being formed between the thermoelectron-radiating material and the substrate and the substrate by applying a direct current voltage, and a diamond film having an average particle size of 2 microns or less, compression residual stress and electric resistance of 10.sup.8 ohm.cm or more being formed on the substrate by using the activation by the thermoelectron-radiating material together with the activation by the formation of DC plasma.

Abstract: The present invention relates to gaseous phase synthesized diamond and a method of synthesizing the same. In order to obtain crystalline diamond having remarkably high completeness and hardly containing carbon having a construction other than that of diamond, raw material gases are thermally activated by a thermoelectron-radiating material heated at an extremely high temperature, the thermoelectron-radiating material being connected to a negative pole while a substrate to be coated is connected to a positive pole, by the use of a direct current power source, a plasma being formed between the thermoelectron-radiating material and the substrate by applying a direct current voltage, and a diamond film having an average particle size of 2 microns or less, compression residual stress and electric resistance of 10.sup.8 ohm.cm or more being formed on the substrate by using the activation by the thermoelectron-radiating material together with the activation by the formation of DC plasma.

Abstract: A method and apparatus for synthesizing diamond film or coating by applying low-pressurized vapor phase capable of precipitating diamond on the surface of a substrate by activating gas composed of carbon including solid carbon, hydrocarbon, and carbon tetrachloride respectively being mixed with hydrogen. More particularly, the invention relates to an apparatus and method of synthesizing diamond by disposing a grid between a thermoelectron-radiating material heated with activated material gas to a minimum of 1,600.degree. C., and the substrate to be coated, where the thermoelectron radiating material and grid are respectively used for the negative and positive electrodes, followed by provision of potentials by causing the positive and negative electrodes to respectively be connected to the grid and the substrate by arranging another power supply source. The method of synthesizing diamond according to the invention securely generates extremely fine crystalline diamond particles each having a maximum of 2 .mu.

Abstract: A surface-coated article or part, for example, hard material-coated steels or cemented carbides for cutting tools, wear resisting tools, sliding parts or decoration articles, having good properties comparable to those obtained by the PVD method, can be produced by a plasma CVD method characterized by using jointly a high frequency source and a direct current source as a plasma exciting source, holding a substrate or base metal at a negative potential by the direct current source and adjusting a high frequency power density applied to a plasma-forming space to 0.01 to 1 W/cm.sup.3, an absolute value of a direct current voltage to at most 1500 V and a gaseous atmosphere pressure to 0.05 to 5 Torr.