Abstract: The invention provides an integrated circuit including a capacitor provided with a silicon nitride film formed on a lower electrode of a polycrystalline silicon film by a rapid thermal nitridation method, a BaTiO.sub.3 film formed on the silicon nitride film and an upper electrode. The above capacitor structure can prevent the formation of a silicon oxide layer at the interface between the polycrystalline silicon film and the BaTiO.sub.3, and thus has high capacitance.

Abstract: A method of producing a silicon nitride film free of photolithographty and dry etching processes and a method of fabricating a semiconductor memory cell device are disclosed. A first polycrystalline silicon film serving as a bottom electrode is selectively formed only on a silicon region of the substrate with a field oxide film and a silicon nitride film is selectively formed only on the first polycrystalline silicon film by selective chemical vapor deposition in which a source gas including a combination of both ammonia and either silane or dichlorosilane is doped with hydrogen chloride. Then, a second polycrystalline film serving as a top electrode is selectively formed on the silicon nitride film.