Abstract: The problem to be solved by the present invention is to provide a cultured cell sheet having a superior tissue adhesiveness and an excellent flexibility. The problems can be solved by producing the cultured cell sheet in which cells are cultured in the presence of a surfactant protein or a cross-linking inhibitor on a surface of a cell culture support that is coated with a temperature responsive polymer having an upper or lower critical solution temperature ranging from 0° C. to 80° C. in water, including steps of: adjusting the temperature of the culture medium to a temperature below the lower critical solution temperature or above the upper critical solution temperature; and detaching the cultured cell sheet.

Abstract: A group-III nitride structure includes a substrate 102 and a fine wall-shaped structure 110 disposed to stand on the substrate 102 in a vertical direction relative to a surface of the substrate 102 and extending in an in-plane direction of the substrate 102. The fine wall-shaped structure 110 contains a group-III nitride semiconductor crystal, and h is larger than d assuming that the height of the fine wall-shaped structure 110 is h and the width of the fine wall-shaped structure 110 in a direction perpendicular to the height direction and the extending direction is d.

Abstract: A temperature responsive monolithic porous material is obtained that comprises a polymer having a hydration ability that changes in a temperature range of 0 to 80° C. and being immobilized to a surface of the porous material at a high density by binding an atom transfer radical polymerization initiator to a surface of the porous material, and inducing a growth reaction of a polymer, having a hydration ability that changes in a temperature range of 0 to 80° C., from the initiator using an atom transfer radical process under a presence of a catalyst.

Abstract: A method of manufacturing a semiconductor element by forming, on a substrate, columnar crystals of a nitride-base or an oxide-base compound semiconductor, and by using the columnar crystals, wherein on the surface of the substrate, the columnar crystals are grown while ensuring anisotropy in the direction of c-axis, by controlling ratio of supply of Group-III atoms and nitrogen, or Group-II atoms and oxygen atoms, and temperature of crystal growth, so as to suppress crystal growth in the lateral direction on the surface of the substrate.

Abstract: A method of manufacturing a semiconductor element by forming, on a substrate, columnar crystals of a nitride-base or an oxide-base compound semiconductor, and by using the columnar crystals, wherein on the surface of the substrate, the columnar crystals are grown while ensuring anisotropy in the direction of c-axis, by controlling ratio of supply of Group-III atoms and nitrogen, or Group-II atoms and oxygen atoms, and temperature of crystal growth, so as to suppress crystal growth in the lateral direction on the surface of the substrate.

Abstract: The present invention provides a semiconductor optical element array including: a semiconductor substrate having a main surface in which a plurality of concave portions is formed; a mask pattern that is formed on the main surface of the semiconductor substrate and includes a plurality of opening portions provided immediately above the plurality of concave portions; a plurality of fine columnar crystals that is made of a group-III nitride semiconductor grown from the plurality of concave portions to the upper side of the mask pattern through the plurality of opening portions; an active layer that is grown on each of the plurality of fine columnar crystals; and a semiconductor layer covering each of the active layers.

Abstract: A cultured periodontal membrane cell sheet, produced through a process comprising culturing cells on a cell culture support composed of a base material having its surface coated with a temperature-responsive polymer of 0˚C to 80˚C upper limit or lower limit critical dissolution temperature in water under specified conditions, (1) regulating the temperature of culture fluid to temperature?the upper limit critical dissolution temperature or?the lower limit critical dissolution temperature, (2) causing a cultured periodontal membrane cell sheet resulting from the culturing to adhere to a carrier, and (3) detaching the sheet together with the carrier. This cultured periodontal membrane cell sheet has a syndesmotic microstructure, exhibiting extremely high bioadherence to the surface of dental root, and realizes high-density transplant of target cells and positive reconstruction of periodontal tissue.

Abstract: A III nitride structure includes a film 108 having a surface composed of a metal formed in a predetermined region on the surface of a substrate 102, and a fine columnar crystal 110 composed of at least a III nitride semiconductor formed on the surface of the substrate 102, wherein the spatial occupancy ratio of the fine columnar crystal 110 is higher on the surface of the substrate 102 where the film 108 is not formed than that on the film.

Abstract: A process for producing a cultured multi-layered skin cell sheet is provided.

Abstract: The problem to be solved by the present invention is to provide a cultured cell sheet having a superior tissue adhesiveness and an excellent flexibility. The problems can be solved by producing the cultured cell sheet in which cells are cultured in the presence of a surfactant protein or a cross-linking inhibitor on a surface of a cell culture support that is coated with a temperature responsive polymer having an upper or lower critical solution temperature ranging from 0° C. to 80° C. in water, including steps of: adjusting the temperature of the culture medium to a temperature below the lower critical solution temperature or above the upper critical solution temperature; and detaching the cultured cell sheet.

Abstract: A temperature responsive monolithic porous material is obtained that comprises a polymer having a hydration ability that changes in a temperature range of 0 to 80° C. and being immobilized to a surface of the porous material at a high density by binding an atom transfer radical polymerization initiator to a surface of the porous material, and inducing a growth reaction of a polymer, having a hydration ability that changes in a temperature range of 0 to 80° C., from the initiator using an atom transfer radical process under a presence of a catalyst.

Abstract: A cell culture support is first prepared that is coated on a surface with a polymer the hydration force of which changes in a temperature range of 0-80° C.; cancer cells are then cultivated on the support in a temperature region where the polymer has weak hydration force; thereafter, the culture solution is adjusted to a temperature at which the polymer has a stronger hydration force, whereby the cultured cancer cells are detached; the detached cancer cells are then transplanted to a specified site of an animal on which transplantation is to be performed; this method is an efficient way of cancer cells transplantation.

Abstract: The present invention provides a semiconductor optical element array including: a semiconductor substrate having a main surface in which a plurality of concave portions is formed; a mask pattern that is formed on the main surface of the semiconductor substrate and includes a plurality of opening portions provided immediately above the plurality of concave portions; a plurality of fine columnar crystals that is made of a group-III nitride semiconductor grown from the plurality of concave portions to the upper side of the mask pattern through the plurality of opening portions; an active layer that is grown on each of the plurality of fine columnar crystals; and a semiconductor layer covering each of the active layers.

Abstract: A group-III nitride structure includes a substrate 102 and a fine wall-shaped structure 110 disposed to stand on the substrate 102 in a vertical direction relative to a surface of the substrate 102 and extending in an in-plane direction of the substrate 102. The fine wall-shaped structure 110 contains a group-III nitride semiconductor crystal, and h is larger than d assuming that the height of the fine wall-shaped structure 110 is h and the width of the fine wall-shaped structure 110 in a direction perpendicular to the height direction and the extending direction is d.

Abstract: A III nitride structure includes a film 108 having a surface composed of a metal formed in a predetermined region on the surface of a substrate 102, and a fine columnar crystal 110 composed of at least a III nitride semiconductor formed on the surface of the substrate 102, wherein the spatial occupancy ratio of the fine columnar crystal 110 is higher on the surface of the substrate 102 where the film 108 is not formed than that on the film.

Abstract: A cell culture support is first prepared that is coated on a surface with a polymer the hydration force of which changes in a temperature range of 0-80° C.; cancer cells are then cultivated on the support in a temperature region where the polymer has weak hydration force; thereafter, the culture solution is adjusted to a temperature at which the polymer has a stronger hydration force, whereby the cultured cancer cells are detached; the detached cancer cells are then transplanted to a specified site of an animal on which transplantation is to be performed; this method is an efficient way of cancer cells transplantation.

Abstract: By using a bed material for cell culture having a surface composed of two domains of domain A coated with a temperature-responsive polymer and domain B composed of any one or a combination of a domain coated with a polymer having high affinity with cells, a domain coated with the temperature-responsive polymer in an amount different from the amount of the temperature-responsive polymer of domain A, and a domain coated with a polymer which responds to a temperature different from the temperature to which domain A responds, a method for the co-culture of a plurality of kinds of cells which has heretofore been difficult becomes possible.

Abstract: It is intended to provide a cultured cell sheet with excellent tissue adherence and flexibility. The above object can be achieved by culturing cells on a support for cell culture in which a surface of a substrate is coated with a temperature-responsive polymer whose lower or upper critical solution temperature against water is in the range of 0 and 80° C. along with a surfactant protein or a crosslinking inhibitor and producing a cultured cell sheet by detaching it by setting the temperature of the culture to the upper critical solution temperature or higher or to the lower critical solution temperature or lower.

Abstract: A cultured periodontal ligament cell sheet is produced by a process comprising culturing cells on a cell culture support composed of a base material whose surface is coated with a temperature-responsive polymer having an upper limit or lower limit critical dissolution temperature in water of 0 to 80° C. under specified conditions, (1) regulating the temperature of a culture fluid to the upper limit critical dissolution temperature or higher or to the lower limit critical temperature or lower, (2) allowing a cultured periodontal ligament cell sheet resulting from the culturing to adhere to a carrier and (3) detaching the sheet intact together with the carrier. This cultured periodontal ligament cell sheet has a syndesmotic microstructure, exhibits extremely high bioadherence to the dental root surface and realizes high density transplantation of target cells and positive reconstruction of periodontal tissues.

Abstract: A method of manufacturing a semiconductor element by forming, on a substrate, columnar crystals of a nitride-base or an oxide-base compound semiconductor, and by using the columnar crystals, wherein on the surface of the substrate, the columnar crystals are grown while ensuring anisotropy in the direction of c-axis, by controlling ratio of supply of Group-III atoms and nitrogen, or Group-II atoms and oxygen atoms, and temperature of crystal growth, so as to suppress crystal growth in the lateral direction on the surface of the substrate.