Abstract: A semiconductor memory device includes a plurality of transistors arranged in a first direction, and arranged in a second direction and a first wiring layer disposed between a semiconductor substrate and a plurality of voltage supply wirings. Each of the plurality of transistors includes a source region and a drain region. The first wiring layer includes a plurality of first connecting portions disposed at positions overlapping with the plurality of source regions when viewed in a third direction and electrically connected to the plurality of source regions and the plurality of voltage supply wirings, a plurality of second connecting portions disposed at positions overlapping with the plurality of source regions when viewed in the third direction and electrically connected to a plurality of the drain regions and a plurality of conductive layers, and a passing wiring region disposed between a pair of the second connecting portions.

Abstract: A method of working a workpiece with an apparatus comprising the steps of holding the workpiece by a holding means, rotating the held workpiece by a rotational means in a direction of a tool to match a rotational axis line of the workpiece with a rotation axis line of the tool, matching a vertical axis of the holding means holding the workpiece with an intersection of a swingable rotation axis line of a means for swingably rotating the tool and the tool rotation axis line, and holding the workpiece above the tool and the working the workpiece by exerting work pressure on the workpiece.