Abstract: To control an excess bias to an appropriate value in a light detection device. A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.

Abstract: To control an excess bias to an appropriate value in a light detection device. A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.

Abstract: In a sensing device that generates a distance image, a variation in distance measurement accuracy in the distance image is reduced. The sensing device includes a predetermined number of pixel circuits and a voltage control unit. Each of the predetermined number of pixel circuits includes a photoelectric conversion element and a detection circuit. A predetermined reverse bias voltage is applied between an anode and a cathode of the photoelectric conversion element. The detection circuit detects whether a photon is present or absent on the basis of a potential of either the anode or the cathode. The voltage control unit adjusts the reverse bias voltage to a value corresponding to a breakdown voltage of the photoelectric conversion element for each of the pixel circuits.

Abstract: To control an excess bias to an appropriate value in a light detection device. A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.

Abstract: To control an excess bias to an appropriate value in a light detection device. A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.

Abstract: In a solid-state imaging element that measures a distance, miniaturization of pixels is facilitated. The solid-state imaging element includes a pixel array unit and a photon number detection unit. In the solid-state imaging element including the pixel array unit and the photon number detection unit, the pixel array unit is provided with a plurality of pixels that generates a predetermined analog signal depending on incidence of a photon and a signal line to which the plurality of pixels is connected in common. Furthermore, in the solid-state imaging element, the photon number detection unit detects the number of photons incident, on the basis of the analog signal transmitted via the signal line.

Abstract: Proposed is a ranging system capable of improving the accuracy of ranging. A ranging system (70) includes: a drive unit (24) that causes a light emitting element to emit light and outputs a drive signal for irradiating a target with light; a sensor unit (302) that detects reflected light from the target; a measurement unit (23) that measures a delay time that is included in a time from timing at which a trigger signal for causing the light emitting element to emit light is output to timing at which the light emitting element actually emits light; and a ranging observation unit (52) which is a processing unit that performs a process of calculating a distance to the target on the basis of output timing of the trigger signal, light receiving timing of the reflected light obtained by the sensor unit, and the delay time.

Abstract: To control an excess bias to an appropriate value in a light detection device. A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.

Abstract: A solid-state imaging device includes a pixel array unit having a plurality of pixels arranged in a matrix form which perform a photoelectric conversion, a pixel signal readout unit having a logic unit and performing a readout of a pixel signal from the pixel array unit, a regulator, a first circuit section, a second circuit section, and a stacked structure in which the first and second circuit sections are bonded, wherein the first circuit section has the pixel array unit disposed therein, and wherein the second circuit section has at least the logic unit and the regulator disposed therein, wherein the regulator includes a reference voltage generation, a plurality of output stage transistors, and an operational amplifier comparing the reference voltage and a commonized output voltage, and an output path of the output stage transistors are connected to a single node, and then is fed back to the operational amplifier.

Abstract: A solid-state imaging device includes a pixel array unit having a plurality of pixels arranged in a matrix form which perform a photoelectric conversion, a pixel signal readout unit having a logic unit and performing a readout of a pixel signal from the pixel array unit, a regulator, a first circuit section, a second circuit section, and a stacked structure in which the first and second circuit sections are bonded, wherein the first circuit section has the pixel array unit disposed therein, and wherein the second circuit section has at least the logic unit and the regulator disposed therein, wherein the regulator includes a reference voltage generation, a plurality of output stage transistors, and an operational amplifier comparing the reference voltage and a commonized output voltage, and an output path of the output stage transistors are connected to a single node, and then is fed back to the operational amplifier.

Abstract: A solid-state imaging device includes a pixel array unit having a plurality of pixels arranged in a matrix form which perform a photoelectric conversion, a pixel signal readout unit having a logic unit and performing a readout of a pixel signal from the pixel array unit, a regulator, a first chip, a second chip, and a stacked structure in which both the first chip and the second chip are bonded, wherein the first chip has the pixel array unit disposed therein, and wherein the second chip has at least the logic unit and the regulator disposed therein, wherein the regulator includes a reference voltage generation, a plurality of output stage transistors, and an operational amplifier comparing the reference voltage and a commonized output voltage, and an output path of the output stage transistors are connected to a single node, and then is fed back to the operational amplifier.

Abstract: Methods and systems for driving a motor are disclosed. A center tap voltage and a desired center tap voltage are used to generate a voltage feedback. A power amplifier receives a reference current and the voltage feedback. The power amplifier provides a phase current to a phase of a motor. The phase current is substantially centered about the desired center tap voltage as a consequence of the voltage feedback. Thus, high-side to low-side or state to state current variations are reduced thereby reducing the occurrence of problems such as torque ripple and back EMF.

Abstract: Methods and systems for driving a motor are disclosed. A center tap voltage and a desired center tap voltage are used to generate a voltage feedback. A power amplifier receives a reference current and the voltage feedback. The power amplifier provides a phase current to a phase of a motor. The phase current is substantially centered about the desired center tap voltage as a consequence of the voltage feedback. Thus, high-side to low-side or state to state current variations are reduced thereby reducing the occurrence of problems such as torque ripple and back EMF.

Abstract: The present invention improves on the topology of a conventional current source by interposing an RC circuit and additional MOS between the output of a buffer and the output of the current source. The topology of the present invention advantageously provides a clean current output by shunting noise to ground.

Abstract: The present invention improves on the topology of a conventional current source by interposing an RC circuit and additional MOS between the output of a buffer and the output of the current source. The topology of the present invention advantageously provides a clean current output by shunting noise to ground.