Abstract: A virtual space sharing system 1 for causing a first moving body 10 and a second moving body 12 is disclosed. The virtual space sharing system includes: a virtual space display unit 20, 22; a delay time measurement unit 30 that measures a communication delay time between the first moving body 10 and the second moving body 12; a motion prediction unit 40 and the second moving body 12; and a display control unit 50 that displays, on the virtual space display unit 20, 22, a motion of the first moving body 10 predicted by the motion prediction unit 40 to be occurring at a point of time into the future by the communication delay time and a motion of the second moving body 12 predicted by the motion prediction unit 40 to be occurring at a point of time into the future by the communication delay time.

Abstract: An n-type nitride semiconductor layer has at least an n-type AlGaN layer. The nitride semiconductor light emitting device includes a passivation film. A negative electrode includes second contact electrodes that are each in ohmic contact with the n-type AlGaN layer, and a second pad electrode that covers the second contact electrodes and is in non-ohmic contact with the n-type AlGaN layer. A metal layer, which is in non-ohmic contact with the n-type AlGaN layer, of metal layers of the second pad electrode is made from material by which reflectivity of ultraviolet radiation emitted from a luminous layer is less than 50%.

Abstract: The semiconductor device includes: an AlGaN layer; a contact electrode; an insulating film; and a passivation film. The semiconductor device further includes: an extended wire extending over the contact electrode and the insulating film; and a pad electrode electrically connected to the extended wire. The passivation film covers the insulating film and the extended wire and including an opening for exposing the pad electrode. The insulating film accommodates the opening in a plan view. The passivation film accommodates the contact electrode in a plan view. The semiconductor device further includes a heat dissipation layer on a surface of the passivation film.

Abstract: Embodiments of the invention provide an approach for reproducing a human action with a robot. The approach includes receiving data representing motions and contact forces of the human as the human performs the action. The approach further includes approximating, based on the motions and contact forces data, the center of mass (CoM) trajectory of the human in performing the action. Finally, the approach includes generating a planned robot action for emulating the designated action by solving an inverse kinematics problem having the approximated human CoM trajectory as a hard constraint and the motion capture data as a soft constraint.

Abstract: The light emitting device comprises a mounting substrate and an LED chip which comprises an n-type nitride semiconductor layer, a nitride light emission layer on the n-type nitride semiconductor layer, p-type nitride semiconductor layer on the nitride light emission layer, an anode electrode opposite of the nitride light emission layer from the p-type nitride semiconductor layer, and a cathode electrode on the n-type nitride semiconductor layer. The mounting substrate has a patterned conductor which is connected to the cathode electrode through a bump and also connected to the anode electrode through a bump. The LED chip further comprises one or more dielectric layer between the p-type nitride semiconductor layer and the anode electrode to have an arrangement which resembles an island. The p-type nitride semiconductor layer has a first region which is overlapped with the bump. The dielectric layer is not formed within the first region.

Abstract: A light distribution controller of a light-emitting device includes a first optical member formed of ZnO disposed over an LED interposing a transparent adhesive, and a second optical member which covers the first optical member. The first optical member includes a first concave portion having an opening in a regular hexagon shape whose area gradually increases. In the first concave portion, inner wall surfaces having inclined surfaces, each of whose bases is formed by one side of the hexagon of the opening shape, are formed. Outside of the first optical member, outer wall surfaces each having a trapezoidal shape are formed. The second optical member includes a second concave portion arranged so that light at an annular peak in the light distribution characteristic of the light traveled through the first optical member is totally reflected.

Abstract: A semi-conductor light emitting device 10 in the present invention comprises an n-type ZnO substrate 3, an emission layer 2, anode 5, and cathode 4. The n-type ZnO substrate 3 has a mounting surface 31 on one of its surfaces. The emission layer 2 is composed of a p-type GaN film 24 and an n-type GaN film 22, and superimposed on the n-type ZnO substrate 3 with the p-type GaN film 24 directly disposed on the mounting surface 31 of the n-type ZnO substrate 3. The anode 5 is disposed directly on the mounting surface 31 of the n-type GaN substrate 3 in an ohmic contact therewith and in a spaced relation from the emission layer. The cathode 4 is disposed on the n-type GaN film 22 in an ohmic contact therewith. The cathode 4 and anode 5 are of the same structure solely composed of a metallic material. The semi-conductor light emitting device in the present invention assures good ohmic contact of both the cathode 4 and the anode 5, and minimizes consumption of metallic materials.

Abstract: A semiconductor light emitting element, including: an n-type semiconductor layer having optical transparency with an emission wavelength of a light emitting layer, the light emitting layer and a p-type semiconductor layer, which are laminated; and a reflection film which is disposed on a side opposite to a surface from which light emitted from the light emitting layer is extracted, wherein the reflection film comprises: a transparent layer having optical transparency with the emission wavelength of the light emitting layer, and a metal layer, which is laminated on the transparent layer on a side opposite to the light emitting layer and is constituted by a metal material having a high reflectance, the transparent layer has a refractive index lower than a refractive index of a layer disposed on a side of the light emitting layer when viewed from the transparent layer, with the emission wavelength, and a thickness of the transparent layer is equal to or more than a value obtained by dividing a value of ¾ of the

Abstract: A light emitting device includes a substrate, and an LED chip mounted on the substrate. The chip includes: a body comprising a transparent conductor which comprises a base and sticks out of the base to taper off from the base; a light source comprising light emitting parts separately formed on the base; a first terminal formed on the base; and second terminals formed on the light emitting parts, respectively. A conductive pattern of the substrate includes: a first conductor electrically connected with the first terminal; and second conductors electrically connected with the second terminals, respectively.

Abstract: A light distribution controller of a light-emitting device includes a first optical member formed of ZnO disposed over an LED interposing a transparent adhesive, and a second optical member which covers the first optical member. The first optical member includes a first concave portion having an opening in a regular hexagon shape whose area gradually increases. In the first concave portion, inner wall surfaces having inclined surfaces, each of whose bases is formed by one side of the hexagon of the opening shape, are formed. Outside of the first optical member, outer wall surfaces each having a trapezoidal shape are formed. The second optical member includes a second concave portion arranged so that light at an annular peak in the light distribution characteristic of the light traveled through the first optical member is totally reflected.

Abstract: A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting element 1 in accordance with the present invention includes: a light-emitting layer 2 having a laminated structure in which a p-type GaN film 24 and an n-type GaN film 22 are included; a conductive hexagonal pyramidal base 3 formed from ZnO and mounting with the light-emitting layer on a bottom surface 31; an anode 5 joined to the bottom surface 31 of the base 3 at a position apart from the light-emitting layer 2; and a cathode 4 mounted on the light-emitting layer 2. In the semiconductor light-emitting element 1, the p-type GaN film 24 is joined to the bottom surface 31 of the base 3, and the cathode 4 is joined to an N-polar plane of the n-type GaN film 22, said N-polar plane of the n-type GaN film 22 being an opposite side to the p-type GaN film 24.

Abstract: A robotic structure includes a component that moves from a first position to a second position. Further, the robotic apparatus includes a robotic controller that (i) receives an input quantity and an output quantity that are computed from human motion data based on a human musculoskeletal model, (ii) computes at least one parameter based on the input quantity and the output quantity, and (iii) outputs the output quantity to the component upon an input of robotic motion data from the component.

Abstract: An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.

Abstract: Embodiments of the invention provide an approach for reproducing a human action with a robot. The approach includes receiving data representing motions and contact forces of the human as the human performs the action. The approach further includes approximating, based on the motions and contact forces data, the center of mass (CoM) trajectory of the human in performing the action. Finally, the approach includes generating a planned robot action for emulating the designated action by solving an inverse kinematics problem having the approximated human CoM trajectory as a hard constraint and the motion capture data as a soft constraint.

Abstract: The light emitting device comprises a mounting substrate and an LED chip which comprises an n-type nitride semiconductor layer, a nitride light emission layer on the n-type nitride semiconductor layer, p-type nitride semiconductor layer on the nitride light emission layer, an anode electrode opposite of the nitride light emission layer from the p-type nitride semiconductor layer, and a cathode electrode on the n-type nitride semiconductor layer. The mounting substrate has a patterned conductor which is connected to the cathode electrode through a bump and also connected to the anode electrode through a bump. The LED chip further comprises one or more dielectric layer between the p-type nitride semiconductor layer and the anode electrode to have an arrangement which resembles an island. The p-type nitride semiconductor layer has a first region which is overlapped with the bump. The dielectric layer is not formed within the first region.

Abstract: A light emitting device includes a substrate, and an LED chip mounted on the substrate. The chip includes: a body comprising a transparent conductor which comprises a base and sticks out of the base to taper off from the base; a light source comprising light emitting parts separately formed on the base; a first terminal formed on the base; and second terminals formed on the light emitting parts, respectively. A conductive pattern of the substrate includes: a first conductor electrically connected with the first terminal; and second conductors electrically connected with the second terminals, respectively.

Abstract: A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting element 1 in accordance with the present invention includes: a light-emitting layer 2 having a laminated structure in which a p-type GaN film 24 and an n-type GaN film 22 are included; a conductive hexagonal pyramidal base 3 formed from ZnO and mounting with the light-emitting layer on a bottom surface 31; an anode 5 joined to the bottom surface 31 of the base 3 at a position apart from the light-emitting layer 2; and a cathode 4 mounted on the light-emitting layer 2. In the semiconductor light-emitting element 1, the p-type GaN film 24 is joined to the bottom surface 31 of the base 3, and the cathode 4 is joined to an N-polar plane of the n-type GaN film 22, said N-polar plane of the n-type GaN film 22 being an opposite side to the p-type GaN film 24.

Abstract: A semi-conductor light emitting device 10 in the present invention comprises an n-type ZnO substrate 3, an emission layer 2, anode 4, and cathode 5. The n-type ZnO substrate 3 has a mounting surface 31 on one of its surfaces. The emission layer 2 is composed of a p-type GaN film 24 and an n-type GaN film 22, and superimposed on the n-type ZnO substrate 3 with the p-type GaN film 24 directly disposed on the mounting surface 31 of the n-type ZnO substrate 3. The anode 4 is disposed directly on the mounting surface 31 of the n-type GaN substrate 3 in an ohmic contact therewith and in a spaced relation from the emission layer. The cathode 4 is disposed on the n-type GaN film 22 in an ohmic contact therewith. The cathode 4 and anode 5 are of the same structure solely composed of a metallic material. The semi-conductor light emitting device in the present invention assures good ohmic contact of both the cathode 4 and the anode 5, and minimizes consumption of metallic materials.

Abstract: An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.

Abstract: A semiconductor light emitting element, including: an n-type semiconductor layer having optical transparency with an emission wavelength of a light emitting layer, the light emitting layer and a p-type semiconductor layer, which are laminated; and a reflection film which is disposed on a side opposite to a surface from which light emitted from the light emitting layer is extracted, wherein the reflection film comprises: a transparent layer having optical transparency with the emission wavelength of the light emitting layer, and a metal layer, which is laminated on the transparent layer on a side opposite to the light emitting layer and is constituted by a metal material having a high reflectance, the transparent layer has a refractive index lower than a refractive index of a layer disposed on a side of the light emitting layer when viewed from the transparent layer, with the emission wavelength, and a thickness of the transparent layer is equal to or more than a value obtained by dividing a value of ¾ of the