Abstract: An electrode according to an embodiment includes a support, and a catalyst layer including a sheet layer and a gap layer stacked, alternately on the support. The catalyst layer includes noble oxide and non-noble oxide. 4 [wt %] or more and 8 [wt %] or less of metal elements included in the catalyst layer is non-noble metal. An average thickness of the gap layer is 6 [nm] or more and 50 [nm] or less.

Abstract: An electrode according to an embodiment includes a support, an intermediate layer including carbon particles and resin on the support, and a catalyst layer on the intermediate layer. A thickness of the intermediate layer is 70 [?m] or more and 300 [?m] or less.

Abstract: A membrane electrode assembly according to an embodiment includes a first electrode, a second electrode, an electrolyte membrane provided between the first electrode and the second electrode and a first seal provided on a peripheral portion of the first electrode, having a first opening, housing the first electrode in the first opening, and being contact with the electrolyte membrane or the first seal and a second seal provided on a peripheral portion of the second electrode, having a second opening, housing the second electrode in the second opening, and being contact with the electrolyte membrane.

Abstract: A display apparatus (100) includes a shelf tag attachment member (102) being fixed to a front end surface of a product shelf S, and a shelf tag (101) having a display surface (103). The shelf tag (101) is attached to the shelf tag attachment member (102) via a rotation axis A, and is rotatable in a predetermined direction in which the display surface (103) is turned upward. A lower end of the shelf tag (101) is located below a lower surface LS of the product shelf S and a lower end of the shelf tag attachment member (102) in a vertical direction.

Abstract: An ultrashort light pulse oscillated from an ultrashort pulse oscillator enters a waveguide (2) via a polarization control element (3). After conversion into a supercontinuum by a nonlinear optical effect, it is compressed by a prism pair compressor (71) as pulse compressor (7), and then emitted. The waveguide (2), which is a nonlinear fiber with normal dispersion in the wavelength range from 850 to 1550, generates the supercontinuum having a spectrum continuous in a wavelength band width of at least 200 nm included in the wavelength range from 850 to 1550 nm. The supercontinuum, which has a peak power within 1 to 100 kW, can be used as excitation light in a multiphoton excitation fluorescence microscope for fluorescence observation of biological samples.

Abstract: An ultrashort light pulse oscillated from an ultrashort pulse oscillator enters a waveguide 2 via a polarization control element 3. After conversion into a supercontinuum by a nonlinear optical effect, it is compressed by a prism pair compressor 71 as pulse compressor 7, and then emitted. The waveguide 2, which is a nonlinear fiber with normal dispersion in the wavelength range from 850 to 1550, generates the supercontinuum having a spectrum continuous in a wavelength band width of at least 200 nm included in the wavelength range from 850 to 1550 nm. The supercontinuum, which has a peak power within 1 to 100 kW, can be used as excitation light in a multiphoton excitation fluorescence microscope for fluorescence observation of biological samples.

Abstract: Provided is a data recovery device, having: an acquiring unit that acquires photon detection number distribution of an image acquired from an imaging optical system; a recovering unit that acquires an estimated image from the photon detection distribution using a predetermined IPSF (an inverse function of a point spread function PSF); an evaluation value calculating unit that calculates, in relation to each of the estimated image and a plurality of images similar to the estimated image, an evaluation value indicating a likelihood that the image is an actual image; and an outputting unit that generates and outputs a physical parameter with which the evaluation value is at least a significance level.

Abstract: An ultrashort light pulse oscillated from an ultrashort pulse oscillator enters a waveguide (2) via a polarization control element (3). After conversion into a supercontinuum by a nonlinear optical effect, it is compressed by a prism pair compressor (71) as pulse compressor (7), and then emitted. The waveguide (2), which is a nonlinear fiber with normal dispersion in the wavelength range from 850 to 1550, generates the supercontinuum having a spectrum continuous in a wavelength band width of at least 200 nm included in the wavelength range from 850 to 1550 nm. The supercontinuum, which has a peak power within 1 to 100 kW, can be used as excitation light in a multiphoton excitation fluorescence microscope for fluorescence observation of biological samples.

Abstract: Provided is a data recovery device, having: an acquiring unit that acquires photon detection number distribution of an image acquired from an imaging optical system; a recovering unit that acquires an estimated image from the photon detection distribution using a predetermined IPSF (an inverse function of a point spread function PSF); an evaluation value calculating unit that calculates, in relation to each of the estimated image and a plurality of images similar to the estimated image, an evaluation value indicating a likelihood that the image is an actual image; and an outputting unit that generates and outputs a physical parameter with which the evaluation value is at least a significance level.

Abstract: Provided is a driving control method of an objective lens in which an optical-axis chromatic aberration can be corrected by driving the objective lens, and an image can be quickly captured by realizing a quick driving and stabilizing of the objective lens so as to acquire a three-dimensional image at a high speed. A driving control method of the objective lens driven by a piezoelectric actuator provided in a fluorescence microscope includes a first step of applying a pulse voltage larger than a displacement voltage making the objective lens move to a focal position of an observation target to the piezoelectric actuator for a predetermined time so as to move the objective lens near the focal position, and a second step of applying the displacement voltage to the piezoelectric actuator after the first step to stabilize the objective lens.

Abstract: Provided is a driving control method of an objective lens in which an optical-axis chromatic aberration can be corrected by driving the objective lens, and an image can be quickly captured by realizing a quick driving and stabilizing of the objective lens so as to acquire a three-dimensional image at a high speed. A driving control method of the objective lens driven by a piezoelectric actuator provided in a fluorescence microscope includes a first step of applying a pulse voltage larger than a displacement voltage making the objective lens move to a focal position of an observation target to the piezoelectric actuator for a predetermined time so as to move the objective lens near the focal position, and a second step of applying the displacement voltage to the piezoelectric actuator after the first step to stabilize the objective lens.

Abstract: In the present semiconductor device, a chip with an LSI circuit is secured to a board 3 (with the chip flipped) so as to be level. The LSI circuit on the chip is specified to operate normally only when the chip is level. Further, the back of the chip is processed so as to give stress to the chip. The chip has a reduced thickness of 50 &mgr;m or less (alternatively 30 &mgr;m to 50 &mgr;m). Therefore, when the chip is detached from the board, it deforms and is no longer level due to the stress, which prohibits the LSI circuit from operating normally. This way, the present semiconductor device ensures that no analysis can be conducted on the LSI circuit once the chip is detached.

Abstract: A semiconductor device includes, on a protective film laminated on a circuit principal part, (i) a light blocking film provided so as to cover the circuit principal part, (ii) an aluminum oxide film provided so as to completely cover the light blocking film, and (iii) a light-blocking upper wiring provided on the aluminum oxide film. An attempt to exfoliate the light blocking film or the light blocking upper wiring causes the resistance-detection-use upper wiring to break or thin, thereby resulting in an increase in the resistance of the resistance-detection-use wiring. The increase in the resistance is detected by the resistance detecting circuit part, and malfunction or inoperativeness of the circuit principal part is caused in response of detection. By so doing, the circuit principal part can be protected from analysis.

Abstract: A semiconductor device in accordance with the present invention includes a semiconductor element chip pressed and secured on a distortion die-pad so that the semiconductor element chip, sealed inside a package, is held in a predetermined distorted state. The predetermined distorted state is preferably downward or upward warping. The semiconductor element chip operates normally in the distorted state, and does not operate normally when the semiconductor element chip is separated from the semiconductor device, and thereby released from the distortion and laid alone. This ensures that the semiconductor element chip is protected from circuit analysis.

Abstract: Structural members 1, 21 are connected by way of a connecting rod 3 which is attached to one structural member 1 and projects outward from connecting surface 2 of structural member 1 in the direction of other structural member 21, and a connector 23 which is attached to other structural member 21 and has a plurality of wedges 25 which engage with connecting rod 3 stopping it so that it cannot slip out. Connecting rod 3 is attached so as to be moveable in a direction parallel to connecting surface 2.

Abstract: In the present semiconductor device, a chip with an LSI circuit is secured to a board 3 (with the chip flipped) so as to be level. The LSI circuit on the chip is specified to operate normally only when the chip is level. Further, the back of the chip is processed so as to give stress to the chip. The chip has a reduced thickness of 50 &mgr;m or less (alternatively 30 &mgr;m to 50 &mgr;m). Therefore, when the chip is detached from the board, it deforms and is no longer level due to the stress, which prohibits the LSI circuit from operating normally. This way, the present semiconductor device ensures that no analysis can be conducted on the LSI circuit once the chip is detached.

Abstract: One end of a circumferential joining end surface 2 of segments 1 which are joined together in the circumferential direction of an excavated tunnel is made the male side circumferential joining end surface 2a on which a male coupler 4 is provided, and the other end is made a female side circumferential joining end surface 2b on which a female coupler 5 is provided. On a base plate 7, a bolt 10, which provides an engagement part 16 comprising a flat washer 13, a disc spring 14, and a head 15, is erected, and made a male coupler 4. An engagement plate 23, formed by a notch 22 which engages the bolt 10, and is inserted and engaged between the base plate 7 and the engagement part 16, and tightly held by the elastic force of the disc springs 14, is made the female coupler 5.

Abstract: A region on a surface side of a sample is irradiated with a Ga ion beam to form a first laminar portion having a thickness of 50-200 nm small enough to allow the transmission electron microscopic observation. While the sample is being heated within a transmission electron microscope, a process in which silicide is being formed is observed at the first laminar portion. Thereafter, a second laminar portion is formed in a thick region of the sample, similarly to the first laminar portion. Then, the first and second laminar portions are comparatively observed in a non-heated state with the transmission electron microscope. If observation results of the two laminar portions in the non-heated state are the same, a result of observing the first laminar portion during the heating is taken to represent a phenomenon in a bulk state.

Abstract: A reference grid for use in charged particle beam spectroscopes in analyzing an impurity contained in a target sample, which includes a grid composed of a material free of the impurity.

Abstract: An inspecting apparatus is provided by which a cross section of a semiconductor device to be inspected can be easily obtained. The inspection apparatus includes a first microscope for specifying a portion where the inspection of a cross section is to be effected, a rotary grinder for grinding the portion specified by the first microscope, a second microscope for monitoring the portion ground by the rotary grinder, and a stage for fixing the semiconductor device movable relative to the first and second microscopes and the rotary grinder.