Abstract: A line-and-space type first pattern and a roughly rectangular second pattern are joined in a rough comb shape to prepare a joint pattern. The first pattern is constituted of a plurality of line patterns each having a width along the direction of its shorter side set to a dimension that does not allow separation/resolution in the field of view of an optical length measuring machine. The second pattern has external dimensions that allow separation/resolution in the field of view of the optical length measuring machine. Such joint patterns are positioned over a distance that allows separation/resolution in the field of view of the optical length measuring machine from each other with the line portions of the first patterns extending outward and achieving a symmetrical positional relationship with together. This pattern is then transferred and formed onto a wafer using a stepper.

Abstract: A method and a system are disclosed for aligning an object to be processed with a predetermined target article, with enhanced accuracy. The method includes the steps of detecting positional data with respect to the object in a state such that the object is rotated by +90 degrees with respect to a reference direction (step S104), and also detecting positional data with respect to the object in a state such that the object is rotated by −90 degrees with respect to the reference direction (step S108). A positional correction factor for the object's position can then be calculated by making use of the positional data attained by both of the above detection steps (step S109). Therefore, asymmetrical signal waveforms when the reflected alignment light is detected can be offset, so that the alignment accuracy can be enhanced.

Abstract: According to the present invention, a semiconductor device is fabricated by the following processes. First, a film to be etched is formed on a semiconductor substrate. On the film to be etched is formed a resist film. Then, a first pattern group including first patterns having a first size and a second pattern group including second patterns arranged outside of the first pattern group are formed by exposure. The resist film is then developed to form openings in the resist film so that the resultant openings correspond to the first and second patterns, respectively. The openings are then made smaller by annealing the resist film. The aforementioned processes enables openings having substantially the same shape to be formed in the film to be etched.