Patents by Inventor Akihiko NOBUKUNI

Akihiko NOBUKUNI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device that facilitates a reduction in the occurrences of cracking in a semiconductor layer accompanying thermal stress
    Patent number: 10347725
    Abstract: An emitter electrode includes a first electrode layer, a second electrode layer, and a third electrode layer. The first to third electrode layers are laid in this order on an emitter layer. A solder layer is further laid on the third electrode layer. The first electrode layer covers the emitter layer and a gate oxide film in a front surface of a semiconductor chip. A first electroconductive material forming the first electrode layer has AlSi as its main component. A second electroconductive material forming the second electrode layer has a linear expansion coefficient different from that of the first electroconductive material and is lower in mechanical strength than the first electroconductive material. A third electroconductive material constituting the third electrode layer has a linear expansion coefficient different from that of the first electroconductive material and has solder wettability higher than that of the first electrode layer.
    Type: Grant
    Filed: December 2, 2015
    Date of Patent: July 9, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventors: Akihiko Nobukuni, Hirofumi Oki, Yoshifumi Tomomatsu
  • SEMICONDUCTOR DEVICE
    Publication number: 20160380068
    Abstract: An emitter electrode includes a first electrode layer, a second electrode layer, and a third electrode layer. The first to third electrode layers are laid in this order on an emitter layer. A solder layer is further laid on the third electrode layer. The first electrode layer covers the emitter layer and a gate oxide film in a front surface of a semiconductor chip. A first electroconductive material forming the first electrode layer has AlSi as its main component. A second electroconductive material forming the second electrode layer has a linear expansion coefficient different from that of the first electroconductive material and is lower in mechanical strength than the first electroconductive material. A third electroconductive material constituting the third electrode layer has a linear expansion coefficient different from that of the first electroconductive material and has solder wettability higher than that of the first electrode layer.
    Type: Application
    Filed: December 2, 2015
    Publication date: December 29, 2016
    Applicant: Mitsubishi Electric Corporation
    Inventors: Akihiko NOBUKUNI, Hirofumi OKI, Yoshifumi TOMOMATSU