Abstract: A nonvolatile memory includes a plurality of drain regions and a plurality of source regions, and a plurality of control gate regions. The drain regions and the source regions are formed on a semiconductor chip so as to extend parallel to each other and extend between opposite ends of the semiconductor chip, and resistances of the source regions per unit length along its longitudinal direction are higher than resistances of the drain regions per unit length along its longitudinal direction. The control gate regions are formed on the semiconductor chip to extend in a direction perpendicular to the drain regions and the source regions. With this arrangement, the cell size can be reduced without causing deterioration of the writing characteristic and increase of the off leak current.

Abstract: A method for forming an insulating film is provided which is capable of inhibiting spontaneous growth of a silicon oxide film formed on a silicon substrate and an increase in thickness of a film caused by exposure to an atmosphere. After having allowed a silicon dioxide layer with a predetermined thickness to grow on a surface of a silicon crystal, a surface of the silicon dioxide is exposed to organic gas containing no hydroxyl group or is exposed to ammonia gas.

Abstract: A method for forming an insulating film is provided which is capable of inhibiting spontaneous growth of a silicon oxide film formed on a silicon substrate and an increase in thickness of a film caused by exposure to an atmosphere.