Abstract: A preferred aim of the invention is to provide technique for improving reliability of semiconductor devices when using a low-dielectric-constant film having a lower dielectric constant than a silicon oxide film to a part of an interlayer insulating film. More specifically, to achieve the preferred aim, an interlayer insulating film IL1 forming a first fine layer is formed of a middle-Young's-modulus film, and thus it is possible to separate an integrated high-Young's-modulus layer (a semiconductor substrate 1S and a contact interlayer insulating film CIL) and an interlayer insulating film (a low-Young's-modulus film; a low-dielectric-constant film) IL2 forming a second fine layer not to let them directly contact with each other, and stress can be diverged. As a result, film exfoliation of the interlayer insulating film IL2 formed of a low-Young's-modulus film can be prevented and thus reliability of semiconductor devices can be improved.

Abstract: A preferred aim of the invention is to provide technique for improving reliability of semiconductor devices when using a low-dielectric-constant film having a lower dielectric constant than a silicon oxide film to apart of an interlayer insulating film. More specifically, to achieve the preferred aim, an interlayer insulating film IL1 forming a first fine layer is formed of a middle-Young's-modulus film, and thus it is possible to separate an integrated high-Young's-modulus layer (a semiconductor substrate 1S and a contact interlayer insulating film CIL) and an interlayer insulating film (a low-Young's-modulus film; a low-dielectric-constant film) IL2 forming a second fine layer not to let them directly contact with each other, and stress can be diverged. As a result, film exfoliation of the interlayer insulating film IL2 formed of a low-Young's-modulus film can be prevented and thus reliability of semiconductor devices can be improved.

Abstract: A resin sheet has a single composition, and changes in thermal conductivity according to an area. The resin sheet includes a region having a thermal conductivity that is greater than an average value of a thermal conductivity of an entirety of the resin sheet by 1 W/mK or more. A method for manufacturing a resin sheet includes: forming a resin composition into a molded body having a sheet shape, the resin composition containing a filler having magnetic anisotropy; performing magnetic field orientation on the filler by using a bulk superconductor magnet in one or a plurality of predetermined portions of the molded body; and forming a region having a thermal conductivity that is greater than an average value of a thermal conductivity of an entirety of the resin sheet by 1 W/mK or more, in the one or the plurality of predetermined portions.

Abstract: The present invention is a quartz glass fiber-containing prepreg including: (A) a quartz glass fiber; and (B) a curable resin composition, wherein at least one condition of conditions: (1) a dose of ?-ray contained in the quartz glass fiber is 0.005 c/cm2·hour or smaller, and, each of metal ion contents of Na+, Li+ and K+ is 1 ppm or lower; (2) the quartz glass fiber contains the number of foams of 10 foams/m2 or smaller a unit area; and (3) the quartz glass fiber-containing prepreg has the common bending stiffness in the range of a thickness of 100 to 200 ?m measured by a method described in JIS R 3420:2013 of 500 N·m2 or larger is satisfied. This provides a quartz glass fiber-containing prepreg that has particularly excellent dielectric characteristics, has excellent dielectric characteristics and the heat resistance, and/or has high handling property because of high bending stiffness characteristics.

Abstract: This is to provide a method for manufacturing a semiconductor apparatus which can shorten the manufacturing process of a semiconductor device, particularly a fan-out package without causing sealing defects such as voids or warpage, and can accomplish reduction in the manufacturing cost or improve in yield. There is provided a method for manufacturing a semiconductor apparatus which comprises preparing a semiconductor device-mounted substrate onto which a plurality of flip chip type semiconductor devices have been mounted onto a wiring layer formed on the substrate, collectively sealing a device-mounted surface of the semiconductor device-mounted substrate with a sealing material attached with a base material for sealing a semiconductor having a base material and a sealing resin layer containing an uncured or semi-cured thermosetting resin component formed on one surface of the base material, and removing the substrate from the collectively sealed semiconductor device-mounted substrate.

Abstract: In a semiconductor wafer-processing, hydrogen gas is introduced into the same chamber as used for film formation and heated to generate hydrogen radicals. Alternatively, a plasma is applied to generate hydrogen radicals, or the semiconductor wafer is heated immediately before film formation. Thereby, contaminants on the surface of the wafer are removed. Thereafter, a conductive film or an insulating film is formed on the wafer in the same chamber.