Patents by Inventor Akihiko Saegusa

Akihiko Saegusa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ZnSe based light emitting device with In layer
    Publication number: 20040214363
    Abstract: A light emitting device includes an LED chip fixed to an electrode body via a conductive layer of In or an In alloy. The conductive layer is in ohmic-contact with an n-type ZnSe crystal substrate of the LED chip. To make the device, In or an In alloy is melted oil the electrode body, the ZnSe substrate is placed directly on tile melted In or In alloy and then subjected to at least one of vibration and pressure to achieve a good bond and ohmic contact between the In or In alloy and tile ZnSe substrate.
    Type: Application
    Filed: July 3, 2002
    Publication date: October 28, 2004
    Inventors: Hideki Matsubara, Koji Katayama, Akihiko Saegusa
  • Method of making ZnSe based light emitting device with in layer using vibration and pressure
    Patent number: 6465273
    Abstract: A light emitting device includes an LED chip fixed to an electrode body via a conductive layer of In or an In alloy. The conductive layer is in ohmic-contact with an n-type ZnSe crystal substrate of the LED chip. To make the device, In or an In alloy is melted on the electrode body, the ZnSe substrate is placed directly on the melted In or In alloy and then subjected to at least one of vibration and pressure to achieve a good bond and ohmic contact between the In or In alloy and the ZnSe substrate.
    Type: Grant
    Filed: May 4, 2000
    Date of Patent: October 15, 2002
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hideki Matsubara, Koji Katayama, Akihiko Saegusa
  • Light emitting diode and manufacturing method thereof
    Patent number: 6420731
    Abstract: An injected current restriction region for restricting an increase in defects by restricting an injected current for light emission is provided inside a ZnSe-based LED. When an end of a light transmitting Au electrode is separated from a cleavage plane, a region near the cleavage plane serves as the injected current restriction region.
    Type: Grant
    Filed: June 26, 2000
    Date of Patent: July 16, 2002
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Koji Katayama, Hideki Matsubara, Akihiko Saegusa