Patents by Inventor Akihiko Tsudumitani

Akihiko Tsudumitani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method of semiconductor device
    Patent number: 8034721
    Abstract: A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the side wall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.
    Type: Grant
    Filed: March 4, 2010
    Date of Patent: October 11, 2011
    Assignee: Panasonic Corporation
    Inventors: Masaru Yamada, Akihiko Tsudumitani
  • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    Publication number: 20100159702
    Abstract: A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the side wall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.
    Type: Application
    Filed: March 4, 2010
    Publication date: June 24, 2010
    Applicant: PANASONIC CORPORATION
    Inventors: Masaru YAMADA, Akihiko Tsudumitani
  • Manufacturing method of semiconductor device
    Patent number: 7696099
    Abstract: A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the sidewall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: April 13, 2010
    Assignee: Panasonic Corporation
    Inventors: Masaru Yamada, Akihiko Tsudumitani
  • Manufacturing method of semiconductor device
    Publication number: 20070196965
    Abstract: A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the sidewall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.
    Type: Application
    Filed: November 16, 2006
    Publication date: August 23, 2007
    Inventors: Masaru Yamada, Akihiko Tsudumitani