Patents by Inventor Akihiko Tsuge

Akihiko Tsuge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190345527
    Abstract: The object of the present invention is to provide a method for synthesizing a double-stranded DNA fragment using a PCR method, the method being capable of accurately, easily, efficiently, and quickly synthesizing a double-stranded DNA fragment of interest, regardless of the sequence thereof. The present invention is a method for synthesizing a double-stranded DNA by connecting short double-stranded DNAs to each other by overlap extension PCR to obtain a double-stranded DNA fragment of interest, the method having a plurality of stages of annealing temperature setting in a PCR cycle of the overlap extension PCR.
    Type: Application
    Filed: November 9, 2018
    Publication date: November 14, 2019
    Inventors: Kenji TSUGE, Shunsuke TAKAHASHI, Akihiko KONDO
  • Patent number: 5272121
    Abstract: A SiC ceramic sintered body containing 0.05-5 atom % Sc, 10 atom % or less free carbon, 2 atom % or less oxygen, balance SiC, is described where 75% or more of the Sc is dissolved into the SiC grains.
    Type: Grant
    Filed: February 21, 1992
    Date of Patent: December 21, 1993
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshiaki Mizutani, Akihiko Tsuge
  • Patent number: 5179050
    Abstract: An SiC-based pressureless sintered product contains a sintered product main component containing grains of at least one additive selected from the group consisting of Tac, NbB.sub.2, VB.sub.2 and WB and the balance of SiC sintered grains constituting a SiC matrix, and a sintering assistant component. The additive grains have a maximum grain size not greater than an average grain size of the SiC sintered grains.
    Type: Grant
    Filed: August 15, 1990
    Date of Patent: January 12, 1993
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshiaki Mizutani, Akihiko Tsuge
  • Patent number: 5112780
    Abstract: A sialon based composite composite essentially consists of 5 wt % to 40 wt % of SiC fibers, 0.3 wt % to 10 wt % of an Hf component which is calculated in terms of Hf oxide, and the balance of sialon as a major constituent. In this case, the sialon is .alpha.-sialon or .beta.-sialon.
    Type: Grant
    Filed: May 10, 1990
    Date of Patent: May 12, 1992
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasuhiro Goto, Takeyuki Yonezawa, Akihiko Tsuge, Michiyasu Komatsu
  • Patent number: 5001089
    Abstract: There is disclosed an aluminum sintered body prepared by sintering aluminum nitride and additives, which consists essentially of(a) aluminum nitride,(b) at least one compound selected from the group consisting of an aluminum compound of a rare earth metal, an aluminum compound of an alkaline earth metal, and an aluminum compound of a rare earth metal and an alkaline earth metal, and(c) at least one element selected from the transition elements consisting of Groups IVa, Va, VIa, VIIa and VIII of the periodic table, and/or at least one compound comprising the element, and the rare earth element, alkaline earth element and transition element are supplied by the additives.
    Type: Grant
    Filed: September 6, 1989
    Date of Patent: March 19, 1991
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mituo Kasori, Kazuo Shinozaki, Kazuo Anzai, Akihiko Tsuge, Hiroshi Imagawa, Takeshi Takano, Fumio Ueno, Akihiro Horiguchi, Hiroshi Inoue
  • Patent number: 4917877
    Abstract: A process for producing aluminum nitride powder by reacting nitrogen gas with a mixture of alumina and carbon is disclosed, in which a solid organic compound is added to the mixture.
    Type: Grant
    Filed: October 14, 1988
    Date of Patent: April 17, 1990
    Assignee: Nippon Light Metal Co., Ltd.
    Inventors: Masanory Oguni, Hachiro Ichikawa, Akira Murase, Hiroo Ozawa, Akihiko Tsuge
  • Patent number: 4883780
    Abstract: There are disclosed an aluminum sintered body comprising(a) aluminum nitride,(b) at least one compound selected from the group consisting of an aluminum compound of a rare earth metal, an aluminum compound of an alkaline earth metal, and an aluminum compound of a rare earth metal and an alkaline earth metal, and(c) at least one element selected from the transition elements consisting of Groups IVa, Va, VIa, VIIa and VIII of the periodic table, and/or at least one compound containing said element,and a process for preparing the same comprising mixing aluminum nitride with(i) at least one of compound selected from the group consisting of a rare earth metal and/or an alkaline earth metal; and(ii) at least one of element selected from the group consisting of a transition element of Groups IVa, Va, VIa, VIIa and VIII of the periodic table, and/or at least one of a compound containing said element;and then molding and sintering the mixture.
    Type: Grant
    Filed: February 11, 1988
    Date of Patent: November 28, 1989
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mituo Kasori, Kazuo Shinozaki, Kazuo Anzai, Akihiko Tsuge, Hiroshi Imagawa, Takeshi Takano, Fumio Ueno, Akihiro Horiguchi, Hiroshi Inoue
  • Patent number: 4853299
    Abstract: A silicon carbide sintered body containing not less than 0.03% by weight of boron, a total of not more than 0.3% by weight of metallic element impurities including the boron, not more than 1.0% by weight of free carbon, a total of not more than 0.15% by weight of non-metal impurities other than the free carbon, and the balance essentially consisting of silicon carbide, and having a density of not less 3.10 g/cm.sup.3. The sintered body is manufactured by heating a molding of a mixture containing a silicon carbide powder, a boron-containing sintering assistant, and a carbon-containing oxygen scavenger to a sintering temperature. The molded body is maintained at a temperature lower than the sintering temperature during the heating process until an oxide film covering the silicon carbide powder is substantially removed by the oxygen scavenger, and the molded body is then sintered at the sintering temperature under a non-pressurized condition.
    Type: Grant
    Filed: September 3, 1986
    Date of Patent: August 1, 1989
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshiaki Mizutani, Takeyuki Yonezawa, Hiroshi Inoue, Akihiko Tsuge, Yoshiyuki Ohnuma
  • Patent number: 4847221
    Abstract: According to the present invention, there is provided an aluminum nitride sintered body having a high thermal conductivity and essentially consisting of a AlN single-phase, containing 0.01 to 8,000 ppm of rare earth elements and less than 2,000 ppm of oxygen. According to the present invention, there is provided a method of fabricating an aluminum nitride sintered body having a high thermal conductivity and essentially consisting of AlN single-phase, containing 0.01 to 8,000 ppm of rare earth elements and less than 2,000 ppm of oxygen, wherein a molded body prepared by mixing and molding an aluminum nitride power having less than 7 wt % of oxygen and an average particle size of 0.05 to 5 .mu.m and with rare earth compounds of 0.01 to 15 wt % of based on rare earth elements content, or a sintered AlN body containing oxide grain boundary phases of 0.01 to 15 wt % of rare earth elements and 0.
    Type: Grant
    Filed: January 11, 1988
    Date of Patent: July 11, 1989
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akihiro Horiguchi, Fumio Ueno, Mitsuo Kasori, Yoshiko Sato, Masaru Hayashi, Hiroshi Endo, Kazuo Shinozaki, Akihiko Tsuge
  • Patent number: 4766097
    Abstract: An aluminum nitride-based sintered body having a high thermal conductivity and a total oxygen content of 0.01 to 20% by weight which is prepared by mixing a main component of aluminum nitride powder containing 0.001 to 7% by weight of oxygen with 0.01 to 15% by weight of at least one of the group consisting of a powder of a rare earth element and/or a powder of a material containing the rare earth element (said 0.01 to 15% by weight being counted on the basis of the content of the rare earth element), and sintering said powder mixture.
    Type: Grant
    Filed: May 14, 1987
    Date of Patent: August 23, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuo Shinozaki, Kazuo Anzai, Takeshi Takano, Akihiko Tsuge
  • Patent number: 4756976
    Abstract: A ceramic with anisotropic thermal conductivity, which has an aluminum nitride polytype layer arranged in a portion of an aluminum-nitride-based sintered body as a thermal barrier.
    Type: Grant
    Filed: August 7, 1987
    Date of Patent: July 12, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Katsutoshi Komeya, Akihiko Tsuge
  • Patent number: 4746637
    Abstract: Disclosed are an aluminum nitride sintered body comprising aluminum nitride, rare earth element-aluminum compounds and alkaline earth metal-aluminum compounds, and a process for producing an aluminum nitride sintered body, which comprises adding to aluminum nitride powder:(a) powder of at least one compound selected from the group consisting of rare earth element oxides, rare earth element fluorides and compounds capable of being converted into these oxides or fluorides by calcination, and(b) powder of at least one compound selected from the group consisting of alkaline earth metal oxides, alkali earth metal fluorides and compounds capable of being converted into these oxides or fluorides by calcination, in a total amount of 0.01 to 20 wt % as calculated on the weight of the oxides or the fluorides, and then molding and sintering the resultant mixture.
    Type: Grant
    Filed: July 31, 1985
    Date of Patent: May 24, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mituo Kasori, Kazuo Shinozaki, Kazuo Anzai, Akihiko Tsuge
  • Patent number: 4685607
    Abstract: A method of forming a nitride ceramic-metal complex material without using a special bonding material. This method comprises bringing a metallic material into contact with the surface of a nitride ceramic material, heating under vacuum the nitride ceramic material so as to dissociate the surface of the nitride ceramic material into nitrogen and a precursor of the ceramic material, thereby allowing the dissociated precursor to react with the metallic material and to achieve bonding between the nitride ceramic material and the metallic material. A nitride ceramic-metal complex material produced by the above method is also proposed.
    Type: Grant
    Filed: May 17, 1985
    Date of Patent: August 11, 1987
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiromitsu Takeda, Masako Nakahashi, Makoto Shirokane, Akihiko Tsuge, Takao Suzuki
  • Patent number: 4680278
    Abstract: A process for preparing aluminum nitride powder, which comprises mixing (i) aluminum hydroxide powder, (ii) carbon powder or a substance capable of forming carbon powder by heating and (iii) at least one of additives selected from the group consisting of aluminum nitride powder, silicon nitride powder, silicon carbide powder and powder of substances capable of forming the powder corresponding to these powders, and baking the mixture thus obtained in a non-oxidative atmosphere containing nitrogen. The process is useful for preparing aluminum nitride powder having small particle size and small particle size distribution and also having a uniform shape of particles, at a lower temperature and in a shorter period of time.
    Type: Grant
    Filed: December 23, 1985
    Date of Patent: July 14, 1987
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Inoue, Akihiko Tsuge, Katsutoshi Komeya
  • Patent number: 4659611
    Abstract: A high thermal conductivity circuit substrate is provided comprising a sintered aluminum nitride ceramic substrate consisting essentially of one member selected from the group of yttrium, the rare earth metals and the alkali earth metals and an electrically conductive thick film paste for a conductive layer formed on the substrate.
    Type: Grant
    Filed: February 27, 1985
    Date of Patent: April 21, 1987
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Nobuo Iwase, Kazuo Anzai, Kazuo Shinozaki, Akihiko Tsuge, Kazutaka Saitoh, Kiyoshi Iyogi, Noboru Sato, Mitsuo Kasori
  • Patent number: 4615863
    Abstract: A process for producing readily sinterable aluminum nitride powder, which comprises mixing(i) alumina powder and/or powder of a compound capable of forming alumina by heat treatment,(ii) carbon powder and/or powder of a compound capable of forming carbon by heat treatment, and(iii) powder of at least one compound selected from the group consisting of alkaline earth metal oxides, compounds capable of forming said alkaline earth metal oxides by heat treatment, rare earth element oxides and compounds capable of forming said rare earth element oxides by heat treatment,and calcining the resulting mixture in a nitrogen-containing non-oxidative atmosphere, provides an aluminum nitride powder which is readily sinterable without further mixing with a sintering aid.
    Type: Grant
    Filed: August 22, 1985
    Date of Patent: October 7, 1986
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Inoue, Akihiko Tsuge, Katsutoshi Komeya
  • Patent number: 4572844
    Abstract: There is disclosed a method for preparing a coated powder comprising the steps of adding a carbon powder and an aluminum nitride powder to a methylsilicic acid powder or a precursor of the methylsilicic acid and mixing them and then subjecting the resulting mixed powder to a heat treatment in an atmosphere including an inert gas or a carbon component-containing gas in order to coat the aluminum nitride powder with silicon carbide.This invention provides a chemically stable coated powder and a sintered body obtained by employing the coated powder has a good thermal conductivity.
    Type: Grant
    Filed: April 20, 1984
    Date of Patent: February 25, 1986
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Inoue, Akihiko Tsuge, Katsutoshi Komeya
  • Patent number: 4539298
    Abstract: Disclosed is a highly heat-conductive ceramic material which is basically of SiC-AlN system, comprising SiC, AlN and one or more of metal oxide selected from CaO, BaO and SrO, each in a prescribed amount. The SiC may otherwise be one whose particle surface is coated with the AlN.
    Type: Grant
    Filed: November 23, 1982
    Date of Patent: September 3, 1985
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Katsutoshi Komeya, Akihiko Tsuge, Hiroshi Inoue, Hiroyasu Ohta
  • Patent number: 4514370
    Abstract: Disclosed is a process for preparing silicon nitride powder, which comprises baking a powdery mixture comprising (i) 1 part by weight of silica powder, or a silica-containing substance in terms of silica, (ii) 0.4 to 4 parts by weight of carbon powder, or a substance generating carbon by baking, in terms of carbon and (iii) 0.005 to 1 part by weight of silicon nitride powder synthesized by a silica reduction method, at a temperature of from 1350.degree. to 1550.degree. C. in a non-oxidative atmosphere containing nitrogen.
    Type: Grant
    Filed: June 8, 1984
    Date of Patent: April 30, 1985
    Assignees: Tokyo Shibaura Denki Kabushiki Kaisha, Toshiba Ceramics Co., Ltd
    Inventors: Hiroshi Inoue, Katsutoshi Komeya, Akihiko Tsuge, Kazunari Koide, Masaaki Mori, Tetsuro Urakawa
  • Patent number: 4511525
    Abstract: Disclosed is a process for producing a sintered silicon nitride-base body, which comprises; mixing powder (A) of heat-treated or not heat-treated silicon nitride powder and powder (B) of powder obtained by heat-treating a powdery mixture of silicon nitride powder and a sintering additive in a non-oxidizing atmosphere and then grinding the resulting heat-treated products into powder; and forming the resultant powdery mixture into a desired shape, which is then sintered in a non-oxidizing atmosphere.The process is characterized by heating powder (B), or powder (A) and powder (B), before sintering, thereby producing sintered silicon nitride body of highly improved properties.
    Type: Grant
    Filed: November 22, 1982
    Date of Patent: April 16, 1985
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Akihiko Tsuge, Michiyasu Komatsu, Hiroshi Inoue, Katsutoshi Komeya