Abstract: A non-aqueous electrolyte secondary battery includes a positive electrode, a negative electrode, and a separator disposed between the positive electrode and the negative electrode. The separator has a multilayer structure in which a first filler layer containing phosphate particles, a porous resin substrate, and a second filler layer containing inorganic particles having higher heat resistance than the phosphate particles are stacked in this order from the negative electrode side. The first filler layer is disposed on the porous resin substrate in such a manner that the surface of the first filler layer faces the surface of the negative electrode. The phosphate particles have a BET specific surface area in the range of 5 m2/g or more and 100 m2/g or less.

Abstract: In a manufacturing method of a semiconductor device according to an embodiment, a plurality of semiconductor packages each including a semiconductor chip mounted on a wiring board and a sealing resin layer as objects to be processed, and a tray including a plurality of housing parts are prepared. A depressed portion having a non-penetrating shape or a penetrating shape is formed in the housing part. The semiconductor packages are disposed in the plural housing parts respectively. By sputtering a metal material on the semiconductor package housed in the tray, a conductive shield layer is formed.

Abstract: In a manufacturing method of a semiconductor device of an embodiment, a plurality of semiconductor packages, as objects to be processed, each including a semiconductor chip mounted on a wiring board and a sealing resin layer, and a tray including a plurality of housing parts are prepared. The semiconductor packages are respectively disposed in the plurality of housing parts of the tray. A metal material is sputtered on the semiconductor packages disposed in the housing parts, to thereby form a conductive shield layer covering an upper surface and side surfaces of each of the sealing resin layers and at least a part of side surfaces of each of the wiring boards.

Abstract: In a manufacturing method of a semiconductor device according to an embodiment, a plurality of semiconductor packages each including a semiconductor chip mounted on a wiring board and a sealing resin layer as objects to be processed, and a tray including a plurality of housing parts are prepared. A depressed portion having a non-penetrating shape or a penetrating shape is formed in the housing part. The semiconductor packages are disposed in the plural housing parts respectively. By sputtering a metal material on the semiconductor package housed in the tray, a conductive shield layer is formed.