Abstract: In the manufacture of a field-effect transistor, a silicon nitride film (underlaid with a thin silicon oxide film) is selectively formed on those parts of a semiconductor substrate of a first conductivity type at which a gate region and source and drain electrodes are to be formed, the formation of the source and drain regions and subsequently the formation of a selective thermal oxidation film on the source and drain regions are carried out by employing the silicon nitride film as a mask, and thereafter, the silicon nitride film is removed and the contacts are selectively formed at the exposed parts.Further, this invention extends to the manufacture of a C-MOS integrated circuit device which exploits the SOP (Selective oxidation process) technique employing an oxidation-proof film.

Abstract: A process for preparing a complementary MOS integrated circuit by forming a shallow first source-drain region near the gate; determining simultaneously the contact holes in the source-drain regions of both of the P-channel and N-channel transistors; forming a deep second source-drain region from the contact holes using thermal diffusion; and forming the electrodes at the contact holes.