Abstract: A cyanide-free immersion type electroless gold plating solution that is less toxic can be used at near neutrality and gives an excellent and improved solder adhesion and plated film adhesion is provided. The electroless gold plating solution contains a cyanide-free water-soluble gold compound, a pyrosulfurous acid compound and a thiosulfuric acid compound. This plating solution preferably further contains a sulfurous acid compound and an aminocarboxylic acid compound. Pyrosulfurous acid and alkali metal salts, alkaline-earth metal salts, ammonium salts and other salts thereof can be used as the pyrosulfurous acid compound.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing a phosphorous copper anode having a crystal grain size of 1500 ?m (or more) to 20000 ?m in an electrolytic copper plating method employing a phosphorous copper anode. Upon performing electrolytic copper plating, an object is to provide an electrolytic copper plating method of a semiconductor wafer for preventing the adhesion of particles, which arise at the anode side in the plating bath, to the plating object such as a semiconductor wafer, a phosphorous copper anode for electrolytic copper plating, and a semiconductor wafer having low particle adhesion plated with such method and anode.

Abstract: The invention provides a displacement electroless gold plating solution that is low in toxicity, can be used at a pH near to neutrality, and affords good solder adhesion and film adhesion. The displacement electroless gold plating solution contains a non-cyanide water-soluble gold compound and a hydrogensulfite compound. Preferably, the plating solution further contains a thiosulfuric acid compound or an aminocarboxylic acid compound. Sodium hydrogensulfite, potassium hydrogensulfite, ammonium hydrogensulfite or the like can be used as the hydrogensulfite compound.

Abstract: A problem for the present invention is to provide a surface-treating agent which improves heat resistance, adhesiveness to resin and solder wettability. This problem is solved by a surface-treating agent for metal comprising a tetrazole derivative represented by the following general formula and/or a salt thereof. (wherein R1 and R2 each independently represent a hydrogen atom, a halogen atom, or an alkyl group or an aryl group, etc., which each have a carbon number of not more than 10, and a group having a halogen atom, a hydroxyl group, a carboxyl group, an amino group or a mercapto group added thereto, or represent an amino group, a mercapto group, a hydroxyl group or a carboxyl group; and R3 represents a bond or an alkylene group, etc.

Abstract: A cyanide-free immersion type electroless gold plating solution that is less toxic, that can be used at near neutrality, and that gives an excellent and improved solder adhesion and plated film adhesion is provided. An electroless gold plating solution, comprising a cyanide-free water-soluble gold compound, a pyrosulfurous acid compound and a thiosulfuric acid compound. This plating solution preferably further contains a sulfurous acid compound and an aminocarboxylic acid compound. Pyrosulfurous acid and alkali metal salts, alkaline-earth metal salts, ammonium salts and other salts thereof can be used as the pyrosulfurous acid compound.

Abstract: An electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of the phosphorous copper anode 10 to 1500 ?m when the anode current density during electrolysis is 3 A/dm2 or more, and making the grain size of the phosphorous copper anode 5 to 1500 ?m when the anode current density during electrolysis is less than 3 A/dm2. The electrolytic copper plating method and phosphorous copper anode used in such electrolytic copper plating method is capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and is capable of preventing the adhesion of particles to a semiconductor wafer. A semiconductor wafer plated with the foregoing method and anode having low particle adhesion are provided.

Abstract: There is provided a cyanide-free immersion type electroless gold plating liquid that is low in toxicity, can be used near neutral, and has good solder adhesion and plating film adhesion. An electroless gold plating liquid containing a cyanide-free water-soluble gold compound and a pyrosulfurous acid compound. The plating liquid may further contain a sulfurous acid compound and an aminocarboxylic acid compound. Pyrosulfurous acid or an alkali metal, alkaline earth metal, ammonium, or other such salt thereof can be used as the pyrosulfurous acid compound.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 &mgr;m or less or 60 &mgr;m or more or a non-recrystallized anode.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing a phosphorous copper anode having a crystal grain size of 1500 &mgr;m (or more) to 20000 &mgr;m in an electrolytic copper plating method employing a phosphorous copper anode. Upon performing electrolytic copper plating, an object is to provide an electrolytic copper plating method of a semiconductor wafer for preventing the adhesion of particles, which arise at the anode side in the plating bath, to the plating object such as a semiconductor wafer, a phosphorous copper anode for electrolytic copper plating, and a semiconductor wafer having low particle adhesion plated with such method and anode.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of said phosphorous copper anode 10 to 1500 &mgr;m when the anode current density during electrolysis is 3 A/dm2 or more, and making the grain size of said phosphorous copper anode 5 to 1500 &mgr;m when the anode current density during electrolysis is less than 3 A/dm2. Provided are an electrolytic copper plating method and a phosphorous copper anode used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.