Patents by Inventor Akihiro FUKUCHI

Akihiro FUKUCHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9236460
    Abstract: A semiconductor device is disclosed. The semiconductor device is capable of obtaining a high reverse recovery resistant amount by allowing sheet resistance of a peripheral portion in a p type diffusion region that is in contact with a metal electrode through an insulating film on a surface to be as high as possible and reducing an increase in cost if possible. The semiconductor device includes: a p type diffusion region that is disposed in a surface layer of the one main surface of an n type semiconductor substrate; and a voltage-resistant region that surrounds the p type diffusion region.
    Type: Grant
    Filed: May 16, 2013
    Date of Patent: January 12, 2016
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Hiromi Koyama, Takashi Shiigi, Akihiro Fukuchi, Seiji Momota, Toshiyuki Matsui
  • Publication number: 20130307019
    Abstract: A semiconductor device is disclosed. The semiconductor device is capable of obtaining a high reverse recovery resistant amount by allowing sheet resistance of a peripheral portion in a p type diffusion region that is in contact with a metal electrode through an insulating film on a surface to be as high as possible and reducing an increase in cost if possible. The semiconductor device includes: a p type diffusion region that is disposed in a surface layer of the one main surface of an n type semiconductor substrate; and a voltage-resistant region that surrounds the p type diffusion region.
    Type: Application
    Filed: May 16, 2013
    Publication date: November 21, 2013
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Hiromi KOYAMA, Takashi SHIIGI, Akihiro FUKUCHI, Seiji MOMOTA, Toshiyuki MATSUI