Abstract: An operated component for a human-powered vehicle comprises a first wired communicator and a first wireless communicator. The first wired communicator has a first wired communication state in which the first wired communicator is configured to recognize a wired signal transmitted via a wired communication channel. The first wireless communicator has a first wireless communication state in which the first wireless communicator is configured to recognize a wireless signal transmitted via a wireless communication channel. The first wireless communicator is configured to be in the first wireless communication state while the first wired communicator is in the first wired communication state.

Abstract: The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the increase of the peel strength between the dicing tape and the film for the backside of a flip-chip semiconductor due to heating. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, in which the difference (?2??1) of the surface free energy ?2 and the surface free energy ?1 is 10 mJ/m2 or more, where ?1 represents the surface free energy of the pressure-sensitive adhesive layer and ?2 represents the surface free energy of the film for the backside of a flip-chip semiconductor.

Abstract: An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150° C. before heating treatment of 50 Pa·s or more and 3,000 Pa·s or less, a viscosity change rate of 500% or less, at 150° C. as a result of the heating treatment, and a reaction rate represented by {(Qt?Qh)/Qt}×100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from ?50° C. to 300° C. and Qh is a total calorific value in a process of temperature rise from ?50° C. to 300° C. after heating at 175° C. for 2 hours in a DSC measurement.

Abstract: The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the transfer of the coloring agent contained in a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape onto the dicing tape. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, the film for the backside of a flip-chip semiconductor contains a coloring agent, and the solubility of the coloring agent to toluene at 23° C. is 2 g/100 ml or less.

Abstract: An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150° C. before heating treatment of 50 Pa·s or more and 3,000 Pa·s or less, a viscosity change rate of 500% or less, at 150° C. as a result of the heating treatment, and a reaction rate represented by {(Qt?Qh)/Qt}×100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from ?50° C. to 300° C. and Qh is a total calorific value in a process of temperature rise from ?50° C. to 300° C. after heating at 175° C. for 2 hours in a DSC measurement.

Abstract: A method for producing a semiconductor device includes: a Step A of preparing a chip with sheet-shaped resin composition in which a sheet-shaped resin composition is pasted onto a bump formation surface of a semiconductor chip, a Step B of preparing a substrate for mounting on which an electrode is formed, a Step C of pasting the chip with resin composition to the substrate for mounting so that the resin composition serves as a pasting surface with the bump formed on the semiconductor chip facing toward the electrode formed on the substrate for mounting, a Step D of heating the resin composition to semi-cure the resin composition after the Step C, and a Step E of heating the resin composition at a higher temperature than that in the Step D to cure the resin composition after the Step D while bonding the bump and the electrode.

Abstract: Provided is a method for manufacturing a semiconductor device, which can manufacture a semiconductor device at a high yield ratio by suppressing dissolution of a sheet-shaped resin composition when cleaning a wafer after peeling a supporting member from the wafer.

Abstract: A method for manufacturing a semiconductor includes: a Step A of preparing a chip with sheet-shaped resin composition in which a sheet-shaped resin composition is pasted onto a semiconductor chip, a Step B of preparing an adherend, a Step C of pasting the chip with sheet-shaped resin composition onto the adherend so that the sheet-shaped resin composition serves as a pasting surface, a Step D of heating the sheet-shaped resin composition to semi-cure the sheet-shaped resin composition after the Step C, and a Step E of heating the sheet-shaped resin composition at a higher temperature than in the Step D to cure the sheet-shaped resin composition after the Step D.

Abstract: Provided are a thermosetting resin composition with which a semiconductor device having a high connection reliability can be provided while securing availability of member materials by reducing a difference in thermal-responsive behavior between a semiconductor element and an adherend, and a method for producing a semiconductor device using the thermosetting resin composition. The present invention provides a thermosetting resin composition for producing a semiconductor device, the thermosetting resin composition comprising: an epoxy resin; and a novolak-type phenol resin having a hydroxyl equivalent of 200 g/eq or more.

Abstract: The present invention provides an adhesive film for underfill that is capable of increasing a glass transition temperature without losing flexibility. The present invention relates to an adhesive film for underfill containing resin components containing an epoxy resin having a number average molecular weight of 600 or less, a phenol resin having a number average molecular weight exceeding 500, and an elastomer in which a content of the epoxy resin in the resin components is 5 to 50% by weight, and the content of the phenol resin in the resin components is 5 to 50% by weight.

Abstract: The present invention provides an underfill film and a sealing sheet that are excellent in thermal conductive property and are capable of satisfactorily filling the space between the semiconductor element and the substrate. The present invention relates to an underfill film having a resin and a thermally conductive filler, in which a content of the thermally conductive filler is 50% by volume or more, an average particle size of the thermally conductive filler is 30% or less of a thickness of the underfill film, and a maximum particle size of the thermally conductive filler is 80% or less of the thickness of the underfill film.

Abstract: A production method for a semiconductor device is provided whereby, when peeling a support body from an attached wafer, melting of a sheet-shaped resin composition pasted to the other surface of the wafer can be suppressed. The method comprises: preparing a support body-attached wafer, said support body-attached wafer having the support body bonded, via a temporary fixing layer, to one surface of the wafer having a through electrode formed therein; preparing a dicing tape-integrated sheet-shaped resin composition having a sheet-shaped resin composition having an external shape smaller than the other surface of the wafer formed upon a dicing tape; pasting the other surface of the support body-attached wafer to the sheet-shaped resin composition in the dicing tape-integrated sheet-shaped resin composition; and melting the temporary fixing layer by a solvent and peeling the support body away from the wafer.

Abstract: An object of the present invention is to provide an underfill sheet that enables suitable filling of unevenness of a circuit surface of a semiconductor element, a suitable connection of a terminal of the semiconductor element and a terminal of an adherend, and suppression of outgas. The present invention relates to the underfill sheet having a viscosity of 1,000 Pa·s to 10,000 Pa·s at 150° C. and 0.05 to 0.20 rotations/min; and a minimum viscosity of 100 Pa·s or more at 100 to 200° C. and 0.3 to 0.7 rotations/min.

Abstract: The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the increase of the peel strength between the dicing tape and the film for the backside of a flip-chip semiconductor due to heating. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, in which the difference (?2??1) of the surface free energy ?2 and the surface free energy ?1 is 10 mJ/m2 or more, where ?1 represents the surface free energy of the pressure-sensitive adhesive layer and ?2 represents the surface free energy of the film for the backside of a flip-chip semiconductor.

Abstract: The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the transfer of the coloring agent contained in a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape onto the dicing tape. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, the film for the backside of a flip-chip semiconductor contains a coloring agent, and the solubility of the coloring agent to toluene at 23° C. is 2 g/100 ml or less.

Abstract: Respective positive terminal electric potentials of exhaust gas sensors are sequentially selectively inputted to an analog input terminal of a multi-channel AD converter through a multiplexer. An offset voltage is applied to respective negative terminals of the exhaust gas sensors. This offset voltage is inputted to another input terminal of the multi-channel AD converter. A microprocessor detects a generating voltage of the exhaust gas sensors by the difference between a digital converting value of the positive terminal electric potential and a digital converting value of the negative terminal electric potential. The microprocessor also individually judges that each of the digital converting values is excessively small and excessively large. Thus, the microprocessor judges the existence of ground, sky short circuit and disconnection abnormalities of the negative terminal and the positive terminal.

Abstract: Respective positive terminal electric potentials of exhaust gas sensors are sequentially selectively inputted to an analog input terminal of a multi-channel AD converter through a multiplexer. An offset voltage is applied to respective negative terminals of the exhaust gas sensors. This offset voltage is inputted to another input terminal of the multi-channel AD converter. A microprocessor detects a generating voltage of the exhaust gas sensors by the difference between a digital converting value of the positive terminal electric potential and a digital converting value of the negative terminal electric potential. The microprocessor also individually judges that each of the digital converting values is excessively small and excessively large. Thus, the microprocessor judges the existence of ground, sky short circuit and disconnection abnormalities of the negative terminal and the positive terminal.

Abstract: The invention relates to a novel compound, 3-hydroxypropyl ester of 2-trifluoromethyl acrylic acid, represented by the formula [1]. The invention further relates to a process for producing the compound.

Abstract: The invention relates to a novel compound, 3-hydroxypropyl ester of 2-trifluoromethyl acrylic acid, represented by the formula [1]. The invention further relates to a process for producing the compound. This process includes reacting 2-trifluoromethylacrylic halide represented by the formula [2], wherein the halogen atom is F or Cl, with 1,3-propanediol represented by the formula [3], in the presence of a base.

Abstract: A fluorine-containing thermosetting resin having a three-dimensional crosslinking structure is obtained by polymerizing a bismaleimide compound having the formula, ##STR1## wherein Rf is fluorine, CF.sub.3, C.sub.2 F.sub.5 or C.sub.3 F.sub.7. The resin is excellent in moldability, thermal resistance and electric properties, has a low dielectric constant, is hence suitable as a molding material and can be used for molding materials, wiring boards, layer insulation films of LSI, etc.