Patents by Inventor Akihiro Isozaki

Akihiro Isozaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10333491
    Abstract: An oscillator includes a package having a first side, a second side, a third side, and a fourth side, a resonator and an oscillation circuit disposed in the package, an output terminal arranged along the first side of the package, and outputting a clock signal generated by the oscillation circuit, and a control terminal arranged along the second side of the package, and supplied with a digital control signal adapted to update an operation state of the oscillation circuit.
    Type: Grant
    Filed: November 7, 2016
    Date of Patent: June 25, 2019
    Assignee: Seiko Epson Corporation
    Inventors: Shigenori Isozaki, Akihiro Fukuzawa, Toshimasa Usui
  • Patent number: 9252330
    Abstract: A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.
    Type: Grant
    Filed: August 5, 2011
    Date of Patent: February 2, 2016
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Akihiro Isozaki, Akira Inoue, Atsushi Yamada, Toshiya Yokogawa
  • Patent number: 8933543
    Abstract: A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x?0, y?0, and z?0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Grant
    Filed: March 15, 2011
    Date of Patent: January 13, 2015
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Toshiya Yokogawa, Mitsuaki Oya, Atsushi Yamada, Akihiro Isozaki
  • Publication number: 20130126902
    Abstract: A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.
    Type: Application
    Filed: August 5, 2011
    Publication date: May 23, 2013
    Applicant: Panasonic Corporation
    Inventors: Akihiro Isozaki, Akira Inoue, Atsushi Yamada, Toshiya Yokogawa
  • Publication number: 20130126901
    Abstract: A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m-plane nitride semiconductor layer and which is interposed between the n- and p-type nitride semiconductor layers; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run in a direction that defines either an angle of 5 degrees to 80 degrees or an angle of ?80 degrees to ?5 degrees with respect to the a-axis direction of the m-plane nitride semiconductor layer.
    Type: Application
    Filed: August 5, 2011
    Publication date: May 23, 2013
    Applicant: PANASONIC CORPORATION
    Inventors: Akihiro Isozaki, Akira Inoue, Atsushi Yamada, Toshiya Yokogawa
  • Patent number: 8441108
    Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: May 14, 2013
    Assignee: Panasonic Corporation
    Inventors: Mitsuaki Oya, Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki
  • Publication number: 20130015427
    Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 17, 2013
    Applicant: PANASONIC CORPORATION
    Inventors: Mitsuaki OYA, Toshiya YOKOGAWA, Atsushi YAMADA, Akihiro ISOZAKI
  • Publication number: 20130001513
    Abstract: A nitride-based semiconductor device includes: a semiconductor multilayer structure 20 including a p-type GaN-based semiconductor region whose surface 12 is inclined by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is provided on the p-type semiconductor region. The p-type semiconductor region is made of an AlxInyGazN (where x+y+z=1, x?0, y?0, and z?0) layer 26. The electrode 30 includes a Zn layer 32, and the Zn layer 32 is in contact with the surface of the p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Application
    Filed: September 11, 2012
    Publication date: January 3, 2013
    Applicant: PANASONIC CORPORATION
    Inventors: Toshiya YOKOGAWA, Mitsuaki OYA, Atsushi YAMADA, Akihiro ISOZAKI
  • Publication number: 20120326161
    Abstract: An exemplary nitride-based semiconductor device includes: a semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x?0, y?0, and z>0) layer 26. The electrode 30 includes a Zn layer 32 and a Ag layer 34 provided on the Zn layer 32. The Zn layer is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Application
    Filed: August 29, 2012
    Publication date: December 27, 2012
    Applicant: PANASONIC CORPORATION
    Inventors: Toshiya YOKOGAWA, Mitsuaki OYA, Atsushi YAMADA, Akihiro ISOZAKI
  • Patent number: 8334199
    Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Grant
    Filed: March 17, 2010
    Date of Patent: December 18, 2012
    Assignee: Panasonic Corporation
    Inventors: Mitsuaki Oya, Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki
  • Patent number: 8318594
    Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Grant
    Filed: March 17, 2010
    Date of Patent: November 27, 2012
    Assignee: Panasonic Corporation
    Inventors: Mitsuaki Oya, Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki
  • Patent number: 8304802
    Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: November 6, 2012
    Assignee: Panasonic Corporation
    Inventors: Mitsuaki Oya, Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki
  • Patent number: 8299490
    Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: October 30, 2012
    Assignee: Panasonic Corporation
    Inventors: Mitsuaki Oya, Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki
  • Publication number: 20120211725
    Abstract: A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x?0, y?0, and z?0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Application
    Filed: March 15, 2011
    Publication date: August 23, 2012
    Applicant: Panasonic Corporation
    Inventors: Toshiya Yokogawa, Mitsuaki Oya, Atsushi Yamada, Akihiro Isozaki
  • Patent number: 8164109
    Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: April 24, 2012
    Assignee: Panasonic Corporation
    Inventors: Mitsuaki Oya, Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki
  • Publication number: 20110253976
    Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Application
    Filed: June 23, 2011
    Publication date: October 20, 2011
    Applicant: PANASONIC CORPORATION
    Inventors: Mitsuaki OYA, Toshiya YOKOGAWA, Atsushi YAMADA, Akihiro ISOZAKI
  • Publication number: 20110253977
    Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Application
    Filed: June 23, 2011
    Publication date: October 20, 2011
    Applicant: PANASONIC CORPORATION
    Inventors: Mitsuaki OYA, Toshiya YOKOGAWA, Atsushi YAMADA, Akihiro ISOZAKI
  • Publication number: 20110248307
    Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Application
    Filed: June 23, 2011
    Publication date: October 13, 2011
    Applicant: PANASONIC CORPORATION
    Inventors: Mitsuaki OYA, Toshiya YOKOGAWA, Atsushi YAMADA, Akihiro ISOZAKI
  • Publication number: 20110101372
    Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Application
    Filed: March 16, 2010
    Publication date: May 5, 2011
    Inventors: Mitsuaki Oya, Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki
  • Publication number: 20110037089
    Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Application
    Filed: March 17, 2010
    Publication date: February 17, 2011
    Inventors: Mitsuaki Oya, Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki