Abstract: A method for fabricating a ferroelectric device includes Step S1 of forming a polycrystalline electrode on or above a substrate in which a MOS transistor is formed, Step S2 of performing metal organic chemical vapor deposition to form an amorphous film of bismuth titanate on the polycrystalline electrode, and Step S3 of performing annealing at a temperature in a predetermined range to make the amorphous film be a polycrystalline ferroelectric film made up of a large number of bismuth titanate having a layered perovskite structure. Step S3 includes a sub-step of increasing a temperature of the amorphous film to a lower limit of the predetermined temperature range at a temperature increase rate at which crystal nuclei are not grown.

Abstract: A nonvolatile semiconductor memory device has a protective insulating film deposited on each of the side surfaces of a control gate electrode to protect the control gate electrode during the formation of a floating gate electrode, the floating gate electrode opposed to one of the side surfaces of the control gate electrode with the protective insulating film interposed therebetween so as to be capacitively coupled to the control gate electrode, a tunnel insulating film formed between the floating gate electrode and the semiconductor substrate, a drain region formed in a region of the semiconductor substrate containing a portion underlying the floating gate electrode, and a source region formed in a region of the semiconductor substrate opposite to the drain region relative to the control gate electrode.

Abstract: A nonvolatile semiconductor memory device has a protective insulating film deposited on each of the side surfaces of a control gate electrode to protect the control gate electrode during the formation of a floating gate electrode, the floating gate electrode opposed to one of the side surfaces of the control gate electrode with the protective insulating film interposed therebetween so as to be capacitively coupled to the control gate electrode, a tunnel insulating film formed between the floating gate electrode and the semiconductor substrate, a drain region formed in a region of the semiconductor substrate containing a portion underlying the floating gate electrode, and a source region formed in a region of the semiconductor substrate opposite to the drain region relative to the control gate electrode.

Abstract: A nonvolatile semiconductor memory device has a protective insulating film deposited on each of the side surfaces of a control gate electrode to protect the control gate electrode during the formation of a floating gate electrode, the floating gate electrode opposed to one of the side surfaces of the control gate electrode with the protective insulating film interposed therebetween so as to be capacitively coupled to the control gate electrode, a tunnel insulating film formed between the floating gate electrode and the semiconductor substrate, a drain region formed in a region of the semiconductor substrate containing a portion underlying the floating gate electrode, and a source region formed in a region of the semiconductor substrate opposite to the drain region relative to the control gate electrode.

Abstract: A nonvolatile semiconductor memory device has a protective insulating film deposited on each of the side surfaces of a control gate electrode to protect the control gate electrode during the formation of a floating gate electrode, the floating gate electrode opposed to one of the side surfaces of the control gate electrode with the protective insulating film interposed therebetween so as to be capacitively coupled to the control gate electrode, a tunnel insulating film formed between the floating gate electrode and the semiconductor substrate, a drain region formed in a region of the semiconductor substrate containing a portion underlying the floating gate electrode, and a source region formed in a region of the semiconductor substrate opposite to the drain region relative to the control gate electrode.

Abstract: A nonvolatile semiconductor memory device has a protective insulating film deposited on each of the side surfaces of a control gate electrode to protect the control gate electrode during the formation of a floating gate electrode, the floating gate electrode opposed to one of the side surfaces of the control gate electrode with the protective insulating film interposed therebetween so as to be capacitively coupled to the control gate electrode, a tunnel insulating film formed between the floating gate electrode and the semiconductor substrate, a drain region formed in a region of the semiconductor substrate containing a portion underlying the floating gate electrode, and a source region formed in a region of the semiconductor substrate opposite to the drain region relative to the control gate electrode.

Abstract: A nonvolatile semiconductor memory device has a protective insulating film deposited on each of the side surfaces of a control gate electrode to protect the control gate electrode during the formation of a floating gate electrode, the floating gate electrode opposed to one of the side surfaces of the control gate electrode with the protective insulating film interposed therebetween so as to be capacitively coupled to the control gate electrode, a tunnel insulating film formed between the floating gate electrode and the semiconductor substrate, a drain region formed in a region of the semiconductor substrate containing a portion underlying the floating gate electrode, and a source region formed in a region of the semiconductor substrate opposite to the drain region relative to the control gate electrode.

Abstract: A nonvolatile semiconductor memory device has a protective insulating film deposited on each of the side surfaces of a control gate electrode to protect the control gate electrode during the formation of a floating gate electrode, the floating gate electrode opposed to one of the side surfaces of the control gate electrode with the protective insulating film interposed therebetween so as to be capacitively coupled to the control gate electrode, a tunnel insulating film formed between the floating gate electrode and the semiconductor substrate, a drain region formed in a region of the semiconductor substrate containing a portion underlying the floating gate electrode, and a source region formed in a region of the semiconductor substrate opposite to the drain region relative to the control gate electrode.

Abstract: A non-volatile semiconductor storage device includes a semiconductor substrate provided with a step portion in an upper portion thereof, and having a first region that is an upper level of the step portion and a second region that is a lower level thereof, a control gate electrode formed on the first region of the semiconductor substrate via a gate insulating film, and a floating gate electrode formed on the side face of the control gate electrode on the side of the step portion and on the step portion via an insulating film. The side face of the step portion forms an obtuse angle with respect to the upper surface of the second region, and the insulating film has a substantially uniform thickness on the step portion.

Abstract: A cathode ray tube includes (a) an electron gun, (b) a funnel which is open at one end and in which the electron gun is located, (c) a face panel which is open at one end and connected to the funnel such that the funnel and the face panel define a closed space, (d) an internal magnetic shield which is located in the space and which is open at opposite ends such that electrons emitted from the electron gun pass therethrough and reach the face panel, (e) a mask frame which internally supports the internal magnetic shield, and (f) a shadow mask which is located in the space in facing relation with the face panel and which is supported by the mask frame. The internal magnetic shield has an edge facing to the face panel. The edge has a closed cross-section and has a projecting portion at least partially projecting from the edge towards the face panel. The projecting portion has a distal end closer to the face panel than a distal end of the shadow mask.

Abstract: A nonvolatile semiconductor memory device has a protective insulating film deposited on each of the side surfaces of a control gate electrode to protect the control gate electrode during the formation of a floating gate electrode, the floating gate electrode opposed to one of the side surfaces of the control gate electrode with the protective insulating film interposed therebetween so as to be capacitively coupled to the control gate electrode, a tunnel insulating film formed between the floating gate electrode and the semiconductor substrate, a drain region formed in a region of the semiconductor substrate containing a portion underlying the floating gate electrode, and a source region formed in a region of the semiconductor substrate opposite to the drain region relative to the control gate electrode.

Abstract: A shadow mask assembly includes a mask frame and a shadow mask supported by the mask frame for extension. The mask frame is of a rectangular shape having a pair of longer side members and a pair of shorter side members. Both the edges of the shadow mask is bonded onto the longer side members while the shorter side members are bent by an external force within the elasticity thereof. After the external force is removed, the shorter side members are slightly deformed within the elasticity thereof whereas the deformation of the longer side members is substantially removed. Suitable tension can be applied to the shadow mask in a wider temperature range.