Abstract: A polishing composition of the present invention, which is used in precision polishing the surface of a wafer for semiconductor devices, remarkably reduces haze that occurs on the surface of the wafer. The polishing composition includes silicon dioxide, an alkaline compound, a water-soluble polymer, and water. The silicon dioxide is colloidal silica or fumed silica. The average primary particle diameter DSA of the colloidal silica is from 5 to 30 nm, and the average secondary particle diameter DN4 of the colloidal silica is from 5 to 120 nm. The average primary particle diameter DSA of the fumed silica is from 5 to 30 nm, and the average secondary particle diameter DN4 of the fumed silica is from 5 to 200 nm.

Abstract: A polishing composition and a rinsing composition according to the present invention can effectively suppress wafer contamination caused by metal impurities. The polishing composition includes a chelating agent, an alkali compound, silicon dioxide and water. The rinsing composition includes a chelating agent, an alkali compound and water. The chelating agent contained in the polishing composition and the rinsing composition is an acid represented by the following chemical formula (1) or a salt thereof. In the chemical formula (1), each of Y2 and Y3 represents an alkylene group, n is an integer of 0 to 4, each of 4+n substituents represented by R8 to R12 is an alkyl group. At least four of the alkyl groups have a phosphonic acid group.

Abstract: A polishing composition and a rinsing composition according to the present invention can effectively suppress wafer contamination caused by metal impurities. The polishing composition includes a chelating agent, an alkali compound, silicon dioxide and water. The rinsing composition includes a chelating agent, an alkali compound and water. The chelating agent contained in the polishing composition and the rinsing composition is an acid represented by the following chemical formula (1) or a salt thereof. In the chemical formula (1), each of Y2 and Y3 represents an alkylene group, n is an integer of 0 to 4, each of 4+n substituents represented by R8 to R12 is an alkyl group. At least four of the alkyl groups have a phosphonic acid group.

Abstract: A polishing composition which comprises the following components (a) to (d): (a) silicon dioxide, (b) at least one basic substance selected from the group consisting of an inorganic salt of an alkali metal, an ammonium salt, piperazine and ethylenediamine, (c) at least one chelating agent selected from the group consisting of a compound represented by the following general formula [1] and its salt: wherein each of R1 and R2 which are the same or different, is a lower alkylene group, and n is an integer of from 0 to 4, and (d) water.

Abstract: A polishing composition of the present invention, which is used in precision polishing the surface of a wafer for semiconductor devices, remarkably reduces haze that occurs on the surface of the wafer. The polishing composition includes silicon dioxide, an alkaline compound, a water-soluble polymer, and water. The silicon dioxide is colloidal silica or fumed silica. The average primary particle diameter DSA of the colloidal silica is from 5 to 30 nm, and the average secondary particle diameter DN4 of the colloidal silica is from 5 to 120 nm. The average primary particle diameter DSA of the fumed silica is from 5 to 30 nm, and the average secondary particle diameter DN4 of the fumed silica is from 5 to 200 nm.

Abstract: A polishing composition which comprises the following components (a) to (d):

Abstract: An edge polishing composition for wafers, comprising water and silicon dioxide having an average particle size of from 70 to 2,500 nm.