Abstract: Positive electrode layer 20 is used for an all-solid-state battery. Positive electrode layer 20 includes positive electrode active material 2 and solid electrolyte 1. A filling rate of positive electrode layer 20 is 85% or more. A porosity of positive electrode active material 2 is 5% or less.

Abstract: A powder layer composite includes a base and a powder layer having a thickness of 100 ?m or less and disposed on the base. An average of a total value of a number of powder aggregates having a long diameter of 500 ?m or greater and a number of pinholes having a long diameter of 500 ?m or greater, in any of a plurality of different regions of 20 mm×20 mm on a surface of the powder layer, is 0.2 pieces/cm2 or less.

Abstract: In one embodiment, a gas sensor includes a sensing layer having a first region containing PdCuSi, and a second region which is provided outside the first region and contains PdCu.

Abstract: Provided is a conductor film obtainable using a carbon nanotube dispersion liquid. The carbon nanotube dispersion liquid contains carbon nanotubes (A), a polymeric dispersant (B) including a sulfonic acid group-containing monomeric unit and an ethylenically unsaturated aliphatic carboxylic acid monomeric unit, and a solvent (C). Percentage content of the ethylenically unsaturated aliphatic carboxylic acid monomeric unit in the polymeric dispersant (B) is greater than 20 mol % and no greater than 90 mol %.

Abstract: An electronic device includes: an electronic component; and a mounting member on which the electronic component is mounted. A center of gravity of the electronic component is at a position separated from the mounting member. The electronic device further includes: a rigid member having a frame shape, which is fixed to the mounting member and surrounds the electronic component in a direction perpendicular to a direction from the center of gravity of the electronic component to the mounting member; and a connecting member which connects the electronic component to the rigid member on a side opposite to the mounting member with respect to the electronic component.

Abstract: Provided is a conductor film obtainable using a carbon nanotube dispersion liquid. The carbon nanotube dispersion liquid contains carbon nanotubes (A), a polymeric dispersant (B) including a sulfonic acid group-containing monomeric unit and an ethylenically unsaturated aliphatic carboxylic acid monomeric unit, and a solvent (C). Percentage content of the ethylenically unsaturated aliphatic carboxylic acid monomeric unit in the polymeric dispersant (B) is greater than 20 mol % and no greater than 90 mol %.

Abstract: Provided is a carbon nanotube dispersion liquid that has excellent stability and that can be used to form a conductor film that exhibits excellent adhesiveness to a substrate. The carbon nanotube dispersion liquid contains carbon nanotubes (A), a polymeric dispersant (B) including a sulfonic acid group-containing monomeric unit and an ethylenically unsaturated aliphatic carboxylic acid monomeric unit, and a solvent (C). Percentage content of the ethylenically unsaturated aliphatic carboxylic acid monomeric unit in the polymeric dispersant (B) is greater than 20 mol % and no greater than 90 mol %.

Abstract: In one embodiment, a gas sensor includes a sensing layer having a first region containing PdCuSi, and a second region which is provided outside the first region and contains PdCu.

Abstract: According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The n-side electrode includes a first portion, a second portion, and a third portion. The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.

Abstract: According to one embodiment, a MEMS device is disclosed. The MEMS device includes a substrate, and a MEMS vibrator provided on the substrate. The MEMS vibrator includes a first vibration portion disposed above the substrate, and a control electrode to control a vibration property of the first vibration portion. The control electrode is disposed without contacting the first vibration portion.

Abstract: The semiconductor layer has a first surface, a second surface provided on opposite side from the first surface, and a third surface provided on the opposite side from the first surface with a step difference with respect to the second surface. The semiconductor layer includes a light emitting layer between the first surface and the third surface. The first electrode is in contact with the second surface. The second electrode is provided in a plane of the third surface. The second electrode includes a contact part in contact with the third surface and an end part not in contact with the third surface. The second electrode contains silver. The insulating film is provided between the end part of the second electrode and the third surface. A semiconductor light emitting device having a high light extraction efficiency is provided.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first metal pillar, a second metal pillar, and an insulating layer. The semiconductor layer includes a first surface, a second surface, and a light emitting layer. The first metal pillar is electrically connected to the second surface. The first metal pillar includes first and second metal layers. The first metal layer is provided between the second surface and at least a part of the second metal layer. The second metal pillar is arranged side by side with the first metal pillar, and electrically connected to the second surface. The second metal pillar includes third and fourth metal layers. The third metal layer is provided between the second surface and at least a part of the fourth metal layer. The insulating layer is provided between the first and second metal pillars.

Abstract: An electronic device includes: an electronic component; and a mounting member on which the electronic component is mounted. A center of gravity of the electronic component is at a position separated from the mounting member. The electronic device further includes: a rigid member having a frame shape, which is fixed to the mounting member and surrounds the electronic component in a direction perpendicular to a direction from the center of gravity of the electronic component to the mounting member; and a connecting member which connects the electronic component to the rigid member on a side opposite to the mounting member with respect to the electronic component.

Abstract: One of embodiments is a semiconductor micro-analysis chip for detecting particles in a sample liquid. The chip comprises a semiconductor substrate, a first flow channel provided on the semiconductor substrate to allow the sample liquid to flow therein, a second flow channel provided at a different position from the first flow channel of the semiconductor substrate to allow the sample liquid or an electrolyte solution to flow therein, a contact portion where a portion of the first flow channel and a portion of the second flow channel abut each other or intersect one another with a partition being arranged between the flow channels, and a fine hole provided on the partition of the contact portion to allow the particles to pass therethrough.

Abstract: According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.

Abstract: The semiconductor layer has a first surface, a second surface provided on opposite side from the first surface, and a third surface provided on the opposite side from the first surface with a step difference with respect to the second surface. The semiconductor layer includes a light emitting layer between the first surface and the third surface. The first electrode is in contact with the second surface. The second electrode is provided in a plane of the third surface. The second electrode includes a contact part in contact with the third surface and an end part not in contact with the third surface. The second electrode contains silver. The insulating film is provided between the end part of the second electrode and the third surface. A semiconductor light emitting device having a high light extraction efficiency is provided.

Abstract: According to one embodiment, a connection structure is disclosed. The connection structure includes a plug having conductivity, a first insulating film, and an electrode. The first insulating film covers a side surface of the plug. The electrode is provided on an upper surface of the plug, and includes a polycrystalline silicon germanium layer and an amorphous silicon germanium layer. The polycrystalline silicon germanium layer is in contact with at least part of the upper surface of the plug without an intervention the amorphous silicon germanium layer.

Abstract: A method for producing a transparent conductive film is provided. The method includes the steps of: applying a treatment solution prepared by dissolving a metal alkoxide of tin or niobium in an organic solvent on one surface of a carbon nanotube-containing layer (1) containing carbon nanotubes having an average diameter Av and a diameter standard deviation ? that satisfy a relationship 0.60>3?/Av>0.20 to form an oxide layer (2) of tin or niobium on the one surface of the carbon nanotube-containing layer (1).

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first metal pillar, a second metal pillar, and an insulating layer. The semiconductor layer includes a first surface, a second surface, and a light emitting layer. The first metal pillar is electrically connected to the second surface. The first metal pillar includes first and second metal layers. The first metal layer is provided between the second surface and at least a part of the second metal layer. The second metal pillar is arranged side by side with the first metal pillar, and electrically connected to the second surface. The second metal pillar includes third and fourth metal layers. The third metal layer is provided between the second surface and at least a part of the fourth metal layer. The insulating layer is provided between the first and second metal pillars.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first metal pillar, a second metal pillar, and an insulating layer. The semiconductor layer includes a first surface, a second surface, and a light emitting layer. The first metal pillar is electrically connected to the second surface. The first metal pillar includes first and second metal layers. The first metal layer is provided between the second surface and at least a part of the second metal layer. The second metal pillar is arranged side by side with the first metal pillar, and electrically connected to the second surface. The second metal pillar includes third and fourth metal layers. The third metal layer is provided between the second surface and at least a part of the fourth metal layer. The insulating layer is provided between the first and second metal pillars.