Abstract: The solar cell element includes a semiconductor substrate with first and second surfaces, a passivation layer located on the second surface, a protective layer located on the passivation layer, and a back-surface electrode located on the protective layer. The back-surface electrode is electrically connected to the semiconductor substrate via one or more hole portions penetrating the protective layer and the passivation layer. The protective layer includes a first region showing a tendency to increase in thickness as a distance from an inner edge portion of the hole portion and a second region surrounding the first region. A distance between a position of the first region farthest from the inner edge portion and the inner edge portion is larger than a thickness in the second region. The back-surface electrode shows a tendency to decrease in thickness on the first region as a distance from the inner edge portion.

Abstract: The solar cell element includes a semiconductor substrate with first and second surfaces, a passivation layer located on the second surface, a protective layer located on the passivation layer, and a back-surface electrode located on the protective layer. The back-surface electrode is electrically connected to the semiconductor substrate via one or more hole portions penetrating the protective layer and the passivation layer. The protective layer includes a first region showing a tendency to increase in thickness as a distance from an inner edge portion of the hole portion and a second region surrounding the first region. A distance between a position of the first region farthest from the inner edge portion and the inner edge portion is larger than a thickness in the second region. The back-surface electrode shows a tendency to decrease in thickness on the first region as a distance from the inner edge portion.

Abstract: A semiconductor substrate is prepared. A glass layer containing one conductivity type dopant is formed on one main surface of the semiconductor substrate. One conductivity type semiconductor region including a first concentration region having a first concentration as a dopant concentration, and a second concentration region having a second concentration as a dopant concentration higher than the first concentration is formed by heating the semiconductor substrate with the glass layer on the one main surface to diffuse the dopant in a surface part on the one main surface side of the semiconductor substrate. Surfaces of two or more portions apart from each other in the surface part on the one main surface side of the semiconductor substrate are roughened by locally heating the semiconductor substrate from above the glass layer, to form alignment reference parts.