Abstract: A relief valve relieves hydraulic fluid from a first port to a second port, and includes a housing and an adjustment member capable of advancing and retracting; a seat member with a relief passage connecting to the two ports; a relief valve body that is unseated from or seated on the seat member to open or close the relief passage, and that receives pressure of the first port in a direction of opening the relief passage; a first biasing member that biases the relief valve body against the pressure of the first port, with a force adjusted by the adjustment member; a check valve body that opens or closes a check passage connecting to the two ports, and that receives pressure of the second port in a direction of opening the check passage; and a second biasing member that biases the check valve body.

Abstract: An electronic device according to one embodiment includes a wiring substrate, the wiring substrate having a first wiring connected to a first external terminal and a second wiring connected to a second external terminal and extending along the first wiring. Additionally, the above electronic device has a semiconductor device mounted on the above wiring substrate and electrically connected to each of the first and second wirings. Further, the above electronic device has a capacitor mounted on the above wiring substrate and electrically connected to the semiconductor device via each of the above first and second wirings. Furthermore, a distance between the above semiconductor device and capacitor is shorter than a distance between each of the above first and second external terminals and the above capacitor.

Abstract: A semiconductor integrated power device including: an output transistor configured to drive an external load element; a temperature detection circuit configured to: output a first detection signal in reference to a temperature difference between a temperature of the output transistor and an ambient temperature; and output a second detection signal in reference to a temperature difference between a temperature of the output transistor and a first reference temperature; and a current limiter circuit configured to limit a current flowing through the output transistor according to the first detection signal and the second detection signal. The temperature detection circuit activates and inactivates the first detection signal or the second detection signal based on an output of a first hysteresis circuit.

Abstract: A semiconductor device according to related art has a problem that a clamp voltage that clamps an output voltage cannot adaptively vary in accordance with a power supply voltage, and it is thus not possible to reduce heating of a semiconductor chip to a sufficiently low level. According to one embodiment, a semiconductor device includes a drive circuit (10) that controls on and off of an output transistor (13) and an overvoltage protection circuit (12) that controls a conductive state of the output transistor (13) when an output voltage Vout reaches a clamp voltage, and the overvoltage protection circuit (12) has a circuit structure that sets the clamp voltage to vary in proportion to a power supply voltage VDD.

Abstract: Provided are an input buffer, a semiconductor device and an engine control unit making it possible to execute fault diagnosis in real time. The input buffer includes a first comparator which compares a voltage of an input signal with a first reference voltage, a hysteresis circuit which generates a first high voltage side or low voltage side reference voltage on the basis of a comparison result from the first comparator, a second comparator which compares the voltage of the input signal with a second reference voltage, and a hysteresis circuit which outputs a second high voltage side reference voltage which is higher than the first high voltage side reference voltage or a second low voltage side reference voltage which is lower than the first low voltage side reference voltage.

Abstract: A power MOSFET and a sense MOSFET for detecting a current of the power MOSFET are formed in a semiconductor chip, and a source pad and a Kelvin pad are formed of a source electrode for the power MOSFET. The source pad is a pad for outputting the current flowing to the power MOSFET, and the Kelvin pad is a pad for detecting a source potential of the power MOSFET. The source electrode has a slit, and at least a part of the slit is arranged between the source pad and the Kelvin pad when seen in a plan view.

Abstract: An electronic device according to one embodiment includes a wiring substrate, the wiring substrate having a first wiring connected to a first external terminal and a second wiring connected to a second external terminal and extending along the first wiring. Additionally, the above electronic device has a semiconductor device mounted on the above wiring substrate and electrically connected to each of the first and second wirings. Further, the above electronic device has a capacitor mounted on the above wiring substrate and electrically connected to the semiconductor device via each of the above first and second wirings. Furthermore, a distance between the above semiconductor device and capacitor is shorter than a distance between each of the above first and second external terminals and the above capacitor.

Abstract: A power MOSFET and a sense MOSFET for detecting a current of the power MOSFET are formed in a semiconductor chip, and a source pad and a Kelvin pad are formed of a source electrode for the power MOSFET. The source pad is a pad for outputting the current flowing to the power MOSFET, and the Kelvin pad is a pad for detecting a source potential of the power MOSFET. The source electrode has a slit, and at least a part of the slit is arranged between the source pad and the Kelvin pad when seen in a plan view.

Abstract: Provided are an input buffer, a semiconductor device and an engine control unit making it possible to execute fault diagnosis in real time. The input buffer includes a first comparator which compares a voltage of an input signal with a first reference voltage, a hysteresis circuit which generates a first high voltage side or low voltage side reference voltage on the basis of a comparison result from the first comparator, a second comparator which compares the voltage of the input signal with a second reference voltage, and a hysteresis circuit which outputs a second high voltage side reference voltage which is higher than the first high voltage side reference voltage or a second low voltage side reference voltage which is lower than the first low voltage side reference voltage.

Abstract: A semiconductor device according to related art has a problem that a clamp voltage that clamps an output voltage cannot adaptively vary in accordance with a power supply voltage, and it is thus not possible to reduce heating of a semiconductor chip to a sufficiently low level. According to one embodiment, a semiconductor device includes a drive circuit (10) that controls on and off of an output transistor (13) and an overvoltage protection circuit (12) that controls a conductive state of the output transistor (13) when an output voltage Vout reaches a clamp voltage, and the overvoltage protection circuit (12) has a circuit structure that sets the clamp voltage to vary in proportion to a power supply voltage VDD.

Abstract: A load driving method includes bringing an output transistor disposed between a first power supply line and an output terminal connected to a load into a conduction state by a protection transistor provided between a gate of the output transistor and a second power supply line when a polarity of a power supply coupled between the first power supply line and the second power supply lines is reversed, and forming a conductive path between the second power supply line and a back gate of the protection transistor via a transistor by a back gate control circuit when the polarity of the power supply is normal, the back gate control circuit including the transistor, a gate of the transistor being coupled to the first power supply line directly via a connection node located in a connecting line that couples the first power supply line and the output transistor, the transistor being coupled between the second power supply line and the back gate of the protection transistor.

Abstract: A semiconductor integrated power device including: an output transistor configured to drive an external load element; a temperature detection circuit configured to: output a first detection signal in reference to a temperature difference between a temperature of the output transistor and an ambient temperature; and output a second detection signal in reference to a temperature difference between a temperature of the output transistor and a first reference temperature; and a current limiter circuit configured to limit a current flowing through the output transistor according to the first detection signal and the second detection signal. The temperature detection circuit activates and inactivates the first detection signal or the second detection signal based on an output of a first hysteresis circuit.

Abstract: A load driving device 10 includes a temperature detector TD1 that sets a temperature difference detection signal dt_ot to active when a temperature difference Tdif between a temperature Ttr of an output transistor T1 and an ambient temperature becomes more than a reference temperature difference Tdref1, and sets an over temperature detection signal at_ot to active when the temperature Ttr of the output transistor T1 becomes higher than a reference temperature Tref1, a current limiter IL1 that limits a GS current of the output transistor T1 when any one of the detection signals becomes active, and the output transistor T1 that turns off regardless of an external input signal IN when any one of the detection signals becomes active.

Abstract: A power MOSFET and a sense MOSFET for detecting a current of the power MOSFET are formed in a semiconductor chip, and a source pad and a Kelvin pad are formed of a source electrode for the power MOSFET. The source pad is a pad for outputting the current flowing to the power MOSFET, and the Kelvin pad is a pad for detecting a source potential of the power MOSFET. The source electrode has a slit, and at least a part of the slit is arranged between the source pad and the Kelvin pad when seen in a plan view.

Abstract: A semiconductor device includes: an output transistor; and a current detection section. The output transistor controls electric power supply from an electric power source to a load. The current detection section detects a current flowing through the output transistor. The current detection section has a current detection characteristic in which a current detection value has approximately linier and negative dependence on a drain-source voltage of the output transistor.

Abstract: A power semiconductor device includes an output transistor, a control circuit connected with a gate of the output transistor, a first discharge route from a first node to a ground terminal, and a second discharge route from the first node to the ground terminal. In a usual turn-off, only the first discharge route is used. When a load abnormality occurs, both of the first and second discharge routes are used. The second discharge route contains a discharge transistor and a countercurrent prevention device. The discharge transistor is connected between the first node and the second node. The countercurrent prevention device prevents a flow of current from the third node to the second node. At least, in an OFF period, the control circuit sets the gate voltage of the discharge transistor to a high level.

Abstract: According to one embodiment, a switching control circuit (CTL1) includes a Zener diode (D1) that, when a voltage between a drain (Dr1) and a source (Sr1) of an output transistor (T1) that controls a current flowing through a load (4) exceeds a specified value (Vc1), allows continuity between the drain (Dr1) and the source (Sr1) of the output transistor (T1), and a current mirror circuit that, when a current flows through the Zener diode (D1), allows continuity between the drain (Dr1) and a gate (Gt1) of the output transistor (T1).

Abstract: A load driving device 10 includes a temperature detector TD1 that sets a temperature difference detection signal dt_ot to active when a temperature difference Tdif between a temperature Ttr of an output transistor T1 and an ambient temperature becomes more than a reference temperature difference Tdref1, and sets an over temperature detection signal at_ot to active when the temperature Ttr of the output transistor T1 becomes higher than a reference temperature Tref1, a current limiter IL1 that limits a GS current of the output transistor T1 when any one of the detection signals becomes active, and the output transistor T1 that turns off regardless of an external input signal IN when any one of the detection signals becomes active.

Abstract: A power semiconductor device includes an output transistor, a control circuit connected with a gate of the output transistor, a first discharge route from a first node to a ground terminal, and a second discharge route from the first node to the ground terminal. In a usual turn-off, only the first discharge route is used. When a load abnormality occurs, both of the first and second discharge routes are used. The second discharge route contains a discharge transistor and a countercurrent prevention device. The discharge transistor is connected between the first node and the second node. The countercurrent prevention device prevents a flow of current from the third node to the second node. At least, in an OFF period, the control circuit sets the gate voltage of the discharge transistor to a high level.

Abstract: A load driving method includes bringing an output transistor disposed between a first power supply line and an output terminal connected to a load into a conduction state by a protection transistor provided between a gate of the output transistor and a second power supply line when a polarity of a power supply coupled between the first power supply line and the second power supply lines is reversed, and forming a conductive path between the second power supply line and a back gate of the protection transistor via a transistor by a back gate control circuit when the polarity of the power supply is normal, the back gate control circuit including the transistor, a gate of the transistor being coupled to the first power supply line directly via a connection node located in a connecting line that couples the first power supply line and the output transistor, the transistor being coupled between the second power supply line and the back gate of the protection transistor.