Abstract: The ion implantation method includes (a) moving a wafer adjusted to have a first implantation angle with respect to an ion beam from a beam irradiation range toward a beam non-irradiation range; (b) starting a change of the wafer from the first implantation angle to a second implantation angle while the wafer is moved within the beam non-irradiation range after the wafer having the first implantation angle is moved from the beam irradiation range; (c-1) reversing a movement direction of the wafer at an end of the beam non-irradiation range and moving the wafer toward the beam irradiation range; and (c-2) completing the change of the wafer from the first implantation angle to the second implantation angle while the wafer is moved within the beam non-irradiation range before the wafer is returned to the beam irradiation range.

Abstract: An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.

Abstract: An ion implantation apparatus performs a plurality of ion implantation processes having different implantation conditions to a same wafer successively. The plurality of ion implantation processes are: (a) provided so that twist angles of the wafer differ from each other; (b) configured so that an ion beam is irradiated to a wafer surface to be processed that moves in a reciprocating movement direction; and (c) provided so that a target value of a beam current density distribution of the ion beam is variable in accordance with a position of the wafer in the reciprocating movement direction. Before performing the plurality of ion implantation processes to the same wafer successively, a control device executes a setup process in which a plurality of scanning parameters corresponding to the respective implantation conditions of the plurality of ion implantation processes are determined collectively.

Abstract: An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.

Abstract: An ion implantation apparatus includes a beam scanner that provides reciprocating beam scanning in a beam scanning direction, a beam measurer that measures a beam current intensity distribution in the beam scanning direction at a downstream of the beam scanner, and a controller. The controller includes a scanning waveform preparing unit that determines whether or not a measured beam current intensity distribution measured by the beam measurer with use of a given scanning waveform fits a target non-uniform dose amount distribution, and that, in a case of fitting, correlates the given scanning waveform with the target non-uniform dose amount distribution.

Abstract: An ion implantation apparatus includes a beam scanner that provides reciprocating beam scanning in a beam scanning direction, a beam measurer that measures a beam current intensity distribution in the beam scanning direction at a downstream of the beam scanner, and a controller. The controller includes a scanning waveform preparing unit that determines whether or not a measured beam current intensity distribution measured by the beam measurer with use of a given scanning waveform fits a target non-uniform dose amount distribution, and that, in a case of fitting, correlates the given scanning waveform with the target non-uniform dose amount distribution.

Abstract: An ion implantation method includes transporting ions to a wafer as an ion beam, causing the wafer to undergo wafer mechanical slow scanning and also causing the ion beam to undergo beam fast scanning or causing the wafer to undergo wafer mechanical fast scanning in a direction perpendicular to a wafer slow scanning direction, irradiating the wafer with the ion beam by using the wafer slow scanning in the wafer slow scanning direction and the beam fast scanning of the ion beam or the wafer fast scanning of the wafer in the direction perpendicular to the wafer slow scanning direction, measuring a two-dimensional beam shape of the ion beam before ion implantation into the wafer, and defining an implantation and irradiation region of the ion beam by using the measured two-dimensional beam shape to thereby regulate the implantation and irradiation region.

Abstract: An ion implantation apparatus performs a plurality of ion implantation processes having different implantation conditions to a same wafer successively. The plurality of ion implantation processes are: (a) provided so that twist angles of the wafer differ from each other; (b) configured so that an ion beam is irradiated to a wafer surface to be processed that moves in a reciprocating movement direction; and (c) provided so that a target value of a beam current density distribution of the ion beam is variable in accordance with a position of the wafer in the reciprocating movement direction. Before performing the plurality of ion implantation processes to the same wafer successively, a control device executes a setup process in which a plurality of scanning parameters corresponding to the respective implantation conditions of the plurality of ion implantation processes are determined collectively.

Abstract: On a plane of a semiconductor wafer, two types of in-plane regions comprising full-width non-ion-implantation regions and partial ion implantation regions, which are alternately arranged one or more times in a direction orthogonal to a scanning direction of an ion beam are created. During the creation of the partial ion implantation regions, reciprocating scanning using the ion beam can be repeated until the target dose can be satisfied while performing or stopping ion beam radiation onto the semiconductor wafer in a state in which the semiconductor wafer can be fixed. During the creation of the full-width non-ion-implantation regions, the semiconductor wafer can be moved without performing the ion beam radiation onto the semiconductor wafer. Then, by repeating fixing and movement of the semiconductor wafer plural times, ion implantation regions and non-ion-implantation regions are created in desired regions of the semiconductor wafer.

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

Abstract: The ion implantation method includes setting an ion beam scanning speed and a mechanical scanning speed of an object during ion implantation using hybrid scan in advance and implanting ions based on the set ion beam scanning speed and the set mechanical scanning speed of the object. In the setting in advance, each of the ion beam scanning speeds is set based on each of ion beam scanning amplitudes changing severally according to a surface outline of an object which is irradiated with the ions so that an ion beam scanning frequency is maintained constant for any of ion beam scanning amplitudes, and the mechanical scanning speed of the object corresponding to the ion beam scanning speed is set so that an ion implantation dose per unit area to be implanted into the surface of the object is maintained constant.

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.

Abstract: An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction.

Abstract: The ion implantation method includes setting an ion beam scanning speed and a mechanical scanning speed of an object during ion implantation using hybrid scan in advance and implanting ions based on the set ion beam scanning speed and the set mechanical scanning speed of the object. In the setting in advance, each of the ion beam scanning speeds is set based on each of ion beam scanning amplitudes changing severally according to a surface outline of an object which is irradiated with the ions so that an ion beam scanning frequency is maintained constant for any of ion beam scanning amplitudes, and the mechanical scanning speed of the object corresponding to the ion beam scanning speed is set so that an ion implantation dose per unit area to be implanted into the surface of the object is maintained constant.

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

Abstract: An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction.