Abstract: The purpose of the present invention is to provide a pattern measurement device which adequately evaluates a pattern formed by means of a patterning method for forming a pattern that is not in a photomask. In order to fulfil the purpose, the present invention suggests a pattern measurement device provided with a computation device for measuring the dimensions between patterns formed on a sample, wherein: the centroid of the pattern formed on the sample is extracted from data to be measured obtained by irradiating beams; a position alignment process is executed between the extracted centroid and measurement reference data in which a reference functioning as the measurement start point or measurement end point is set; and the dimensions between the measurement start point or the measurement end point of the measurement reference data, which was subjected to position alignment, and the edge or the centroid of the pattern contained in the data to be measured is measured.

Abstract: The purpose of the present invention is to provide a pattern measurement device which adequately evaluates a pattern formed by means of a patterning method for forming a pattern that is not in a photomask. In order to fulfil the purpose, the present invention suggests a pattern measurement device provided with a computation device for measuring the dimensions between patterns formed on a sample, wherein: the centroid of the pattern formed on the sample is extracted from data to be measured obtained by irradiating beams; a position alignment process is executed between the extracted centroid and measurement reference data in which a reference functioning as the measurement start point or measurement end point is set; and the dimensions between the measurement start point or the measurement end point of the measurement reference data, which was subjected to position alignment, and the edge or the centroid of the pattern contained in the data to be measured is measured.

Abstract: In order to provide a technique for performing global alignment (detecting position shift and rotation of a wafer) stably and automatically using an optical microscope, as a pattern for global alignment, multiple alignment pattern candidates are calculated (107), multiple data for matching are created for each alignment pattern (108), matching is performed with respect to the data for matching for each alignment pattern in descending order of appropriateness as an alignment pattern with an image (113) based on an image signal from the optical microscope (114), and the amount of position shift and the amount of rotation of the wafer are calculated (116) on the basis of the results of matching (115).

Abstract: The present invention relates to a setting method for an image capture area on the occasion of evaluation of a circuit pattern using a scanning charged particle microscope. A circuit pattern that is to be evaluated using an actual image or design data is determined, a plurality of image capture areas are set such that the circuit pattern to be evaluated is included in a section of the field of vision, and images are captured of the plurality of image capture areas. When setting the image capture areas, a permissible value for the distance between adjacent first and second images is set, and the positions of the image capture areas are optimized so as to correspond as closely as possible with the permissible value for distance. As a result, it is possible to improve the throughput of image capture of wide inspection areas that do not fit in the field of vision of the scanning charge particle microscope, and to efficiently carry out determination of an inspection area that may cause electrical failure.

Abstract: In order to provide a technique for performing global alignment (detecting position shift and rotation of a wafer) stably and automatically using an optical microscope, as a pattern for global alignment, multiple alignment pattern candidates are calculated (107), multiple data for matching are created for each alignment pattern (108), matching is performed with respect to the data for matching for each alignment pattern in descending order of appropriateness as an alignment pattern with an image (113) based on an image signal from the optical microscope (114), and the amount of position shift and the amount of rotation of the wafer are calculated (116) on the basis of the results of matching (115).

Abstract: Mutual compatibility is established between the measurement with a high magnification and the measurement in a wide region. A pattern measurement apparatus is proposed which adds identification information to each of fragments that constitute a pattern within an image obtained by the SEM, and which stores the identification information in a predetermined storage format. Here, the identification information is added to each fragment for distinguishing between one fragment and another fragment. According to the above-described configuration, it turns out that the identification information is added to each fragment on the SEM image which has possessed no specific identification information originally. As a result, it becomes possible to implement the SEM-image management based on the identification information.

Abstract: Mutual compatibility is established between the measurement with a high magnification and the measurement in a wide region. A pattern measurement apparatus is proposed which adds identification information to each of fragments that constitute a pattern within an image obtained by the SEM, and which stores the identification information in a predetermined storage format. Here, the identification information is added to each fragment for distinguishing between one fragment and another fragment. According to the above-described configuration, it turns out that the identification information is added to each fragment on the SEM image which has possessed no specific identification information originally. As a result, it becomes possible to implement the SEM-image management based on the identification information.

Abstract: Mutual compatibility is established between the measurement with a high magnification and the measurement in a wide region. A pattern measurement apparatus is proposed which adds identification information to each of fragments that constitute a pattern within an image obtained by the SEM, and which stores the identification information in a predetermined storage format. Here, the identification information is added to each fragment for distinguishing between one fragment and another fragment. According to the above-described configuration, it turns out that the identification information is added to each fragment on the SEM image which has possessed no specific identification information originally. As a result, it becomes possible to implement the SEM-image management based on the identification information.

Abstract: Mutual compatibility is established between the measurement with a high magnification and the measurement in a wide region. A pattern measurement apparatus is proposed which adds identification information to each of fragments that constitute a pattern within an image obtained by the SEM, and which stores the identification information in a predetermined storage format. Here, the identification information is added to each fragment for distinguishing between one fragment and another fragment. According to the above-described configuration, it turns out that the identification information is added to each fragment on the SEM image which has possessed no specific identification information originally. As a result, it becomes possible to implement the SEM-image management based on the identification information.