Abstract: A machining tool is rotated around an axis and includes a machining blade portion having a first machining blade in the distal end direction with respect to a rake face and a second machining blade located in the radially outward direction with respect to the rake face, and a protrusion formed on the rake face and having a tip for cutting chips coming from the first machining blade. The protrusion includes an inner forming portion that is located in the radially inward direction from the reference line and an outer forming portion that is located in the radially outward direction from the reference line, and the width of the inner forming portion is wider than the width of the outer forming portion.

Abstract: A semiconductor apparatus includes a semiconductor module, a substrate having a control unit that controls an operation of the semiconductor module, a busbar that allows a current to flow through the semiconductor module, and a shield arranged between at least respective opposing surfaces of the control unit and the busbar that oppose to each other.

Abstract: A machining tool is a machining tool rotated about an axis and is provided with a machining blade portion having a rake face and a machining blade, wherein in a case where the rake face faces and is parallel to an virtual plane including the axis, the rake face is arranged at a position shifted from the virtual plane in the direction opposite to the rotational direction of the machining tool.

Abstract: Provided is a semiconductor device including: a circuit board; a wiring pattern; a first semiconductor chip and a second semiconductor chip; a first lead frame; and a second lead frame; wherein the first lead frame and the second lead frame each comprises: a chip joining portion provided above at least a part of the semiconductor chip; a wiring joining portion provided above at least a part of the wiring pattern; and a bridging portion for connecting the chip joining portion and the wiring joining portion; and in the first direction, a space between the bridging portion of the first lead frame and the bridging portion of the second lead frame is smaller than a space between the chip joining portion of the first lead frame and the chip joining portion of the second lead frame.

Abstract: When forming a first preliminary flute on a PCD layer of a columnar body, electrical discharge machining is performed by setting the electrode orientation so that the first twist angle is ?. Next, when forming a second preliminary flute on a substrate of the columnar body and a round bar, the grinding process is performed by setting the grinding orientation and direction for a diamond whetstone so that a second twist angle is larger than the first twist angle.

Abstract: A machining tool is rotated around an axis and includes a machining blade portion having a first machining blade in the distal end direction with respect to a rake face and a second machining blade located in the radially outward direction with respect to the rake face, and a protrusion formed on the rake face and having a tip for cutting chips coming from the first machining blade. The protrusion includes an inner forming portion that is located in the radially inward direction from the reference line and an outer forming portion that is located in the radially outward direction from the reference line, and the width of the inner forming portion is wider than the width of the outer forming portion.

Abstract: A machining tool is a machining tool rotated about an axis and is provided with a machining blade portion having a rake face and a machining blade, wherein in a case where the rake face faces and is parallel to an virtual plane including the axis, the rake face is arranged at a position shifted from the virtual plane in the direction opposite to the rotational direction of the machining tool.

Abstract: When forming a first preliminary flute on a PCD layer of a columnar body, electrical discharge machining is performed by setting the electrode orientation so that the first twist angle is ?. Next, when forming a second preliminary flute on a substrate of the columnar body and a round bar, the grinding process is performed by setting the grinding orientation and direction for a diamond whetstone so that a second twist angle is larger than the first twist angle.

Abstract: Provided is a semiconductor device including: a circuit board; a wiring pattern; a first semiconductor chip and a second semiconductor chip; a first lead frame; and a second lead frame; wherein the first lead frame and the second lead frame each comprises: a chip joining portion provided above at least a part of the semiconductor chip; a wiring joining portion provided above at least a part of the wiring pattern; and a bridging portion for connecting the chip joining portion and the wiring joining portion; and in the first direction, a space between the bridging portion of the first lead frame and the bridging portion of the second lead frame is smaller than a space between the chip joining portion of the first lead frame and the chip joining portion of the second lead frame.

Abstract: A semiconductor module includes: a first lead frame connected to a plurality of semiconductor chips in a first arm circuit; a second lead frame connected to a plurality of semiconductor chips in a second arm circuit; a first main terminal connected to the first lead frame; and a second main terminal connected to the second lead frame, wherein each of the first lead frame and second lead frame has a facing part, a first terminal connection portion connected to the first main terminal is provided at a first end portion of the first lead frame, a second terminal connection portion connected to the second main terminal is provided at a second end portion of the second lead frame, and the first terminal connection portion and second terminal connection portion are arranged on opposite sides when viewed from the facing parts of the first lead frame and second lead frame.

Abstract: A reverse-conducting semiconductor device includes a semiconductor chip having a top surface, a first side and a second side orthogonal to the first side in a plan view, in which a plurality of transistor regions and a plurality of diode regions are alternately arranged and an upper-electrode is provided on top surface-sides of the transistor regions and the diode regions; and a wiring member having a flat-plate portion having a rectangular-shape which is metallurgically jointed to the upper-electrode via a joint member above the diode regions. The wiring member has a conductive wall rising from a bending edge of the flat-plate portion in a direction opposite to the upper-electrode, and the bending edge of the flat-plate portion is arranged parallel to the first side.

Abstract: A reverse-conducting semiconductor device includes a semiconductor chip having a top surface, a first side and a second side orthogonal to the first side in a plan view, in which a plurality of transistor regions and a plurality of diode regions are alternately arranged and an upper-electrode is provided on top surface-sides of the transistor regions and the diode regions; and a wiring member having a flat-plate portion having a rectangular-shape which is metallurgically jointed to the upper-electrode via a joint member above the diode regions. The wiring member has a conductive wall rising from a bending edge of the flat-plate portion in a direction opposite to the upper-electrode, and the bending edge of the flat-plate portion is arranged parallel to the first side.

Abstract: A semiconductor module includes: a first lead frame connected to a plurality of semiconductor chips in a first arm circuit; a second lead frame connected to a plurality of semiconductor chips in a second arm circuit; a first main terminal connected to the first lead frame; and a second main terminal connected to the second lead frame, wherein each of the first lead frame and second lead frame has a facing part, a first terminal connection portion connected to the first main terminal is provided at a first end portion of the first lead frame, a second terminal connection portion connected to the second main terminal is provided at a second end portion of the second lead frame, and the first terminal connection portion and second terminal connection portion are arranged on opposite sides when viewed from the facing parts of the first lead frame and second lead frame.

Abstract: A blade section has two lands and two flutes in an alternating manner and also has a linear chisel edge. The lands are each provided with: a margin section that is continuous with a cutting blade; a clearance section that is continuous with the margin section and that has a smaller diameter than the margin section; and a pad that is continuous with the clearance section and that has the same width as the width of the margin section.

Abstract: A blade section has two lands and two flutes in an alternating manner and also has a linear chisel edge. The lands are each provided with: a margin section that is continuous with a cutting blade; a clearance section that is continuous with the margin section and that has a smaller diameter than the margin section; and a pad that is continuous with the clearance section and that has the same width as the width of the margin section.

Abstract: There is provided a semiconductor device including a semiconductor substrate with a trench, and a particulate insulating layer filling at least a lower portion of the trench and containing insulating particles. The semiconductor device may further include a reflowable dielectric layer covering an upper surface of the particulate insulating layer, the insulating particles being stable at the melting point or the softening point of the reflowable dielectric layer.

Abstract: There is provided a semiconductor device including a semiconductor substrate with a trench, and a particulate insulating layer filling at least a lower portion of the trench and containing insulating particles. The semiconductor device may further include a reflowable dielectric layer covering an upper surface of the particulate insulating layer, the insulating particles being stable at the melting point or the softening point of the reflowable dielectric layer.