Patents by Inventor Akihiro OTSUKl

Akihiro OTSUKl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180012758
    Abstract: A method for manufacturing an epitaxial wafer comprising a silicon carbide substrate and a silicon carbide voltage-blocking-layer, the method includes: epitaxially growing a buffer layer on the substrate, doping a main dopant for determining a conductivity type of the buffer layer and doping an auxiliary dopant for capturing minority carriers in the buffer layer at a doping concentration less than the doping concentration of the main dopant, so that the buffer layer enhances capturing and extinction of the minority carriers, the minority carriers flowing in a direction from the voltage-blocking-layer to the substrate, so that the buffer layer has a lower resistivity than the voltage-blocking-layer, and so that the buffer layer includes silicon carbide as a main component; and epitaxially growing the voltage-blocking-layer on the buffer layer.
    Type: Application
    Filed: September 22, 2017
    Publication date: January 11, 2018
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Hidekazu TSUCHIDA, Tetsuya MIYAZAWA, Yoshiyuki YONEZAWA, Tomohisa KATO, Kazutoshi KOJIMA, Takeshi TAWARA, Akihiro OTSUKl