Patents by Inventor Akihiro Shibatomi
Akihiro Shibatomi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9082821Abstract: A method for forming a copper interconnection structure includes the steps of forming an opening in an insulating layer, forming a copper alloy layer including a metal element on an inner surface of the opening, and conducting a heat treatment on the copper alloy layer so as to form a barrier layer. An enthalpy of oxide formation for the metal element is lower than the enthalpy of oxide formation for copper. The heat treatment is conducted at temperatures ranging from 327° C. to 427° C. and for a time period ranging from 1 minute to 80 minutes.Type: GrantFiled: October 3, 2011Date of Patent: July 14, 2015Assignee: Advanced Interconnect Materials, LLCInventors: Junichi Koike, Akihiro Shibatomi
-
Patent number: 8580688Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer, and a diffusion barrier layer formed between the insulating layer and the interconnection body. The diffusion barrier layer includes an oxide layer including manganese having a compositional ratio of oxygen to manganese (y/x) less than 2.Type: GrantFiled: September 12, 2011Date of Patent: November 12, 2013Assignee: Advanced Interconect Materials, LLCInventors: Junichi Koike, Akihiro Shibatomi
-
Patent number: 8531033Abstract: A contact plug structure formed on a contact hole of an insulating layer of a semiconductor device includes a metal silicide layer formed on a bottom part of the contact hole of the insulating layer, a manganese oxide layer formed on the metal silicide layer in the contact hole, and a buried copper formed on the manganese oxide layer which substantially fills the contact hole.Type: GrantFiled: September 7, 2010Date of Patent: September 10, 2013Assignee: Advanced Interconnect Materials, LLCInventors: Junichi Koike, Akihiro Shibatomi, Kouji Neishi
-
Patent number: 8420535Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper and a barrier layer surrounding the interconnection body. The barrier layer includes a first barrier layer formed between a first portion of the interconnection body and the insulating layer. The first portion of the interconnection body is part of the interconnection body that faces the insulating layer. The barrier layer also includes a second barrier layer formed on a second portion of the interconnection body. The second portion of the interconnection body is part of the interconnection body not facing the insulating layer. Each of the first and the second barrier layers is formed of an oxide layer including manganese, and each of the first and the second barrier layers has a position where the atomic concentration of manganese is maximized in their thickness direction of the first and the second barrier layers.Type: GrantFiled: August 1, 2012Date of Patent: April 16, 2013Assignee: Advanced Interconnect Materials, LLCInventors: Junichi Koike, Akihiro Shibatomi
-
Patent number: 8324730Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer, and a diffusion barrier layer formed between the insulating layer and the interconnection body. The diffusion barrier layer includes an oxide layer including manganese having a compositional ratio of oxygen to manganese (y/x) less than 2.Type: GrantFiled: October 29, 2009Date of Patent: December 4, 2012Assignee: Advanced Interconnect Materials LLCInventors: Junichi Koike, Akihiro Shibatomi
-
Publication number: 20120295438Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper and a barrier layer surrounding the interconnection body. The barrier layer includes a first barrier layer formed between a first portion of the interconnection body and the insulating layer. The first portion of the interconnection body is part of the interconnection body that faces the insulating layer. The barrier layer also includes a second barrier layer formed on a second portion of the interconnection body. The second portion of the interconnection body is part of the interconnection body not facing the insulating layer. Each of the first and the second barrier layers is formed of an oxide layer including manganese, and each of the first and the second barrier layers has a position where the atomic concentration of manganese is maximized in their thickness direction of the first and the second barrier layers.Type: ApplicationFiled: August 1, 2012Publication date: November 22, 2012Applicant: ADVANCED INTERCONNECT MATERIALS, LLCInventors: Junichi KOIKE, Akihiro SHIBATOMI
-
Patent number: 8258626Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper and a barrier layer surrounding the interconnection body. The barrier layer includes a first barrier layer formed between a first portion of the interconnection body and the insulating layer. The first portion of the interconnection body is part of the interconnection body that faces the insulating layer. The barrier layer also includes a second barrier layer formed on a second portion of the interconnection body. The second portion of the interconnection body is part of the interconnection body not facing the insulating layer. Each of the first and the second barrier layers is formed of an oxide layer including manganese, and each of the first and the second barrier layers has a position where the atomic concentration of manganese is maximized in their thickness direction of the first and the second barrier layers.Type: GrantFiled: September 15, 2009Date of Patent: September 4, 2012Assignee: Advanced Interconnect Materials, LLCInventors: Junichi Koike, Akihiro Shibatomi
-
Patent number: 8169079Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer and a barrier layer including a metal element and copper, formed between the insulating layer and the interconnection body. An atomic concentration of the metal element in the barrier layer is accumulated toward an outer surface of the barrier layer facing the insulating layer, and an atomic concentration of copper in the barrier layer is accumulated toward an inner surface of the barrier layer facing the interconnection body. The inner surface of the barrier layer comprises copper surface orientation of {111} and {200}, and an intensity of X-ray diffraction peak from the inner surface of the barrier layer is stronger for the {111} peak than for the {200} peak.Type: GrantFiled: October 30, 2009Date of Patent: May 1, 2012Assignee: Advanced Interconnect Materials, LLCInventors: Junichi Koike, Akihiro Shibatomi
-
Patent number: 8163649Abstract: A copper interconnection structure includes an insulating layer, an interconnection and a barrier layer. The insulating layer includes silicon (element symbol: Si), carbon (element symbol: C), hydrogen (element symbol: H) and oxygen (element symbol: O). The interconnection is located on the insulating layer, and the interconnection includes copper (element symbol: Cu). The barrier layer is located between the insulating layer and the interconnection. The barrier layer includes an additional element, carbon (element symbol: C) and hydrogen (element symbol: H). The barrier layer has atomic concentrations of carbon (element symbol: C) and hydrogen (element symbol: H) maximized in a region of a thickness of the barrier layer where the atomic concentration of the additional element is maximized.Type: GrantFiled: June 24, 2010Date of Patent: April 24, 2012Assignee: Advanced Interconnect Materials, LLCInventors: Junichi Koike, Akihiro Shibatomi
-
Patent number: 8112885Abstract: A method for forming a copper interconnection structure includes the steps of forming an opening in an insulating layer, forming a copper alloy layer including a metal element on an inner surface of the opening, and conducting a heat treatment on the copper alloy layer so as to form a barrier layer. An enthalpy of oxide formation for the metal element is lower than the enthalpy of oxide formation for copper. The heat treatment is conducted at temperatures ranging from 327° C. to 427° C. and for a time period ranging from 1 minute to 80 minutes.Type: GrantFiled: October 28, 2009Date of Patent: February 14, 2012Assignee: Advanced Interconnect Materials, LLCInventors: Junichi Koike, Akihiro Shibatomi
-
Publication number: 20120021603Abstract: A method for forming a copper interconnection structure includes the steps of forming an opening in an insulating layer, forming a copper alloy layer including a metal element on an inner surface of the opening, and conducting a heat treatment on the copper alloy layer so as to form a barrier layer. An enthalpy of oxide formation for the metal element is lower than the enthalpy of oxide formation for copper. The heat treatment is conducted at temperatures ranging from 327° C. to 427° C. and for a time period ranging from 1 minute to 80 minutes.Type: ApplicationFiled: October 3, 2011Publication date: January 26, 2012Applicant: Advanced Interconnect Materials, LLCInventors: Junichi KOIKE, Akihiro Shibatomi
-
Publication number: 20120003390Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer, and a diffusion barrier layer formed between the insulating layer and the interconnection body. The diffusion barrier layer includes an oxide layer including manganese having a compositional ratio of oxygen to manganese (y/x) less than 2.Type: ApplicationFiled: September 12, 2011Publication date: January 5, 2012Applicant: Advanced Interconnect Materials, LLCInventors: Junichi Koike, Akihiro Shibatomi
-
Publication number: 20110233560Abstract: An electrode for silicon carbide includes a silicide region which is provided in contact with a surface of a silicon carbide (SiC) layer and a carbide region which is provided on the silicide region. The silicide region contains a silicide of a first metal in more amount than a carbide of a second metal whose free energy of carbide formation is less than that of silicon (Si). The carbide region contains the carbide of the second metal in more amount than the silicide of the first metal.Type: ApplicationFiled: March 16, 2011Publication date: September 29, 2011Applicant: Advanced Interconnect Materials, LLCInventors: Junichi Koike, Akihiro Shibatomi, Kunhwa Jung, Yuji Sutou
-
Publication number: 20110057317Abstract: A contact plug structure formed on a contact hole of an insulating layer of a semiconductor device includes a metal silicide layer formed on a bottom part of the contact hole of the insulating layer, a manganese oxide layer formed on the metal silicide layer in the contact hole, and a buried copper formed on the manganese oxide layer which substantially fills the contact hole.Type: ApplicationFiled: September 7, 2010Publication date: March 10, 2011Applicants: Tohoku University, Advanced Interconnect Materials, LLCInventors: Junichi Koike, Akihiro Shibatomi, Kouji Neishi
-
Publication number: 20100267228Abstract: A copper interconnection structure includes an insulating layer, an interconnection and a barrier layer. The insulating layer includes silicon (element symbol: Si), carbon (element symbol: C), hydrogen (element symbol: H) and oxygen (element symbol: O). The interconnection is located on the insulating layer, and the interconnection includes copper (element symbol: Cu). The barrier layer is located between the insulating layer and the interconnection. The barrier layer includes an additional element, carbon (element symbol: C) and hydrogen (element symbol: H). The barrier layer has atomic concentrations of carbon (element symbol: C) and hydrogen (element symbol: H) maximized in a region of a thickness of the barrier layer where the atomic concentration of the additional element is maximized.Type: ApplicationFiled: June 24, 2010Publication date: October 21, 2010Applicants: Advanced Interconnect Materials, LLC, Tohoku UniversityInventors: Junichi Koike, Akihiro Shibatomi
-
Patent number: 7755192Abstract: A copper interconnection structure includes an insulating layer, an interconnection and a barrier layer. The insulating layer includes silicon (element symbol: Si), carbon (element symbol: C), hydrogen (element symbol: H) and oxygen (element symbol: O). The interconnection is located on the insulating layer, and the interconnection includes copper (element symbol: Cu). The barrier layer is located between the insulating layer and the interconnection. The barrier layer includes an additional element, carbon (element symbol: C) and hydrogen (element symbol: H). The barrier layer has atomic concentrations of carbon (element symbol: C) and hydrogen (element symbol: H) maximized in a region of a thickness of the barrier layer where the atomic concentration of the additional element is maximized.Type: GrantFiled: March 24, 2009Date of Patent: July 13, 2010Assignees: Tohoku University, Advanced Interconnect Materials LLCInventors: Junichi Koike, Akihiro Shibatomi
-
Publication number: 20100155951Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer, and a diffusion barrier layer formed between the insulating layer and the interconnection body. The diffusion barrier layer includes an oxide layer including manganese having a compositional ratio of oxygen to manganese (y/x) less than 2.Type: ApplicationFiled: October 29, 2009Publication date: June 24, 2010Applicants: Tohoku University, Advanced Interconnect Materials, LLCInventors: Junichi Koike, Akihiro Shibatomi
-
Publication number: 20100155952Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer and a barrier layer including a metal element and copper, formed between the insulating layer and the interconnection body. An atomic concentration of the metal element in the barrier layer is accumulated toward an outer surface of the barrier layer facing the insulating layer, and an atomic concentration of copper in the barrier layer is accumulated toward an inner surface of the barrier layer facing the interconnection body. The inner surface of the barrier layer comprises copper surface orientation of {111} and {200}, and an intensity of X-ray diffraction peak from the inner surface of the barrier layer is stronger for the {111} peak than for the {200} peak.Type: ApplicationFiled: October 30, 2009Publication date: June 24, 2010Applicants: Tohoku University, Advanced Interconnect Materials, LLCInventors: Junichi Koike, Akihiro Shibatomi
-
Publication number: 20100154213Abstract: A method for forming a copper interconnection structure includes the steps of forming an opening in an insulating layer, forming a copper alloy layer including a metal element on an inner surface of the opening, and conducting a heat treatment on the copper alloy layer so as to form a barrier layer. An enthalpy of oxide formation for the metal element is lower than the enthalpy of oxide formation for copper. The heat treatment is conducted at temperatures ranging from 327° C. to 427° C. and for a time period ranging from 1 minute to 80 minutes.Type: ApplicationFiled: October 28, 2009Publication date: June 24, 2010Applicants: Tohoku University, Advanced Interconnect Materials, LLCInventors: Junichi Koike, Akihiro Shibatomi
-
Publication number: 20100065967Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper and a barrier layer surrounding the interconnection body. The barrier layer includes a first barrier layer formed between a first portion of the interconnection body and the insulating layer. The first portion of the interconnection body is part of the interconnection body that faces the insulating layer. The barrier layer also includes a second barrier layer formed on a second portion of the interconnection body. The second portion of the interconnection body is part of the interconnection body not facing the insulating layer. Each of the first and the second barrier layers is formed of an oxide layer including manganese, and each of the first and the second barrier layers has a position where the atomic concentration of manganese is maximized in their thickness direction of the first and the second barrier layers.Type: ApplicationFiled: September 15, 2009Publication date: March 18, 2010Applicants: National University Corporation Tohoku University, Advanced Interconnect Materials, LLCInventors: Junichi Koike, Akihiro Shibatomi