Abstract: An information processing apparatus that is capable of preventing lowering of operability when printing is performed. In a client terminal, an OS acquires capability information related to printing capability from a server that provides a cloud print service or a printer, and a controller displays a screen. The capability information has a hierarchical structure including at least one item name and a plurality of attribute values belonging to the item name. The controller can perform first display for collectively displaying the item name and the attribute values and second display for displaying the plurality of attribute values in a state sorted into groups of attribute values relevant to each other.

Abstract: A distance image acquisition device includes a distance measurement sensor that detects a measurement light by transferring charges generated in a charge generation region in response to incidence of a measurement light reflected by a target object, to a charge accumulation region by using a transfer gate electrode. The charge generation region includes an avalanche multiplication region that causes avalanche multiplication. The control unit divides an entire distance range of a measurement target into the plurality of sections, controls the distance measurement sensor so as to perform measurements about a plurality of sections while varying a time difference between an emission timing of the measurement light by the light source and a transferring timing of the charges by the transfer gate electrode among the plurality of sections, and generates a distance image of the entire distance range based on the results of the measurements about the plurality of sections.

Abstract: An optical sensor includes an avalanche multiplication region including a first multiplication region having a first conductive type and a second multiplication region having a second conductive type, each of the first multiplication region and the second multiplication region being formed in a layer shape, a charge collection region having the second conductive type disposed on a first side of the second multiplication region, and a first conductive region having the first conductive type disposed on the first side of the second multiplication region. The second multiplication region has a first portion overlapping the charge collection region in a thickness direction of the first multiplication region and the second multiplication region and a second portion overlapping the first conductive region in the thickness direction. A concentration of impurities in the first portion is higher than a concentration of impurities in the second portion.

Abstract: A light detection device includes a controller that controls electric potentials of a charge collection electrode and a transfer gate electrode so that potential energy in a region immediately below the charge collection electrode is a first level, and potential energy in a region immediately below the transfer gate electrode is higher than the potential energy in the region immediately below the charge collection electrode in a first period, and so that the potential energy in the region immediately below the charge collection electrode is a second level higher than the first level, and the potential energy in the region immediately below the transfer gate electrode is lower than the potential energy in the region immediately below the charge collection electrode in a second period after the first period.

Abstract: In a ranging image sensor, each pixel includes an avalanche multiplication region, a charge distribution region, a pair of first charge transfer regions, a pair of second charge transfer regions, a well region, a photogate electrode, a pair of first transfer gate electrodes, and a pair of second transfer gate electrodes. The first multiplication region of the avalanche multiplication region is formed so as to overlap the charge distribution region and so as not to overlap the well region in the Z direction. The second multiplication region of the avalanche multiplication region is formed so as to overlap the charge distribution region and the well region in the Z direction.

Abstract: In a light detection device, a control unit performs a first charge transfer process for transferring charge generated in a charge generation region to a charge storage region by applying an electric potential to a transfer gate electrode so that a potential energy of a region immediately below the transfer gate electrode is lower than a potential energy of the charge generation region and a first read process for reading an amount of charge stored in the charge storage region. In the first charge transfer process, the control unit applies an electric potential to an overflow gate electrode so that a potential energy of a region immediately below the overflow gate electrode is lower than the potential energy of the charge generation region.

Abstract: In a distance measurement device, a control unit performs a charge distribution process in which in a first period, charge generated in a charge generation region is transferred to a first charge storage region and, in a second period, the charge generated in the charge generation region is transferred to a second charge storage region. The control unit applies an electric potential to a first overflow gate electrode so that a potential energy of a region immediately below the first overflow gate electrode is lower than a potential energy of the charge generation region in the first period, and applies an electric potential to a second overflow gate electrode so that a potential energy of a region immediately below the second overflow gate electrode is lower than a potential energy of the charge generation region in the second period.

Abstract: A ranging image sensor includes a semiconductor layer and an electrode layer. The semiconductor layer and the electrode layer form a plurality of pixels. Each of the plurality of pixels includes an avalanche multiplication region, a charge distribution region, a first charge transfer region, and a second charge transfer region in the semiconductor layer. Each of the plurality of pixels includes a photogate electrode, a first transfer gate electrode, and a second transfer gate electrode in the electrode layer. The avalanche multiplication region is continuous over the plurality of pixels or reaches a trench formed in the semiconductor layer so as to separate the plurality of pixels from each other.

Abstract: The present embodiment relates to a distance sensor configured to inject an equal amount of current into storage nodes coupled, respectively, to charge collection regions where charges of a photosensitive region is distributed by driving of first and second transfer electrodes and obtain a distance to an object based on difference information on charge amounts of the respective storage nodes. Saturation caused by disturbance light of each storage node is avoided by injecting the equal amount of current to each storage node, and the difference information on the charge amounts of the respective storage nodes, which is not easily affected by the current injection, is obtained by driving the first and second transfer electrodes according to the plurality of frames representing the electrode drive pattern, respectively.

Abstract: A light detection element includes a semiconductor substrate, a light absorbing layer of a first conductivity type formed on the semiconductor substrate, a cap layer of a first conductivity type formed on the light absorbing layer, and a semiconductor region of a second conductivity type formed within the cap layer and forming a pn junction with the cap layer. A depletion layer formed around the semiconductor region does not reach the light absorbing layer in a case where a reverse bias is not applied to the pn junction, and exceeds a position amounting to 50% of a thickness of the light absorbing layer from the cap layer side in a case where a reverse bias of 20 V is applied to the pn junction.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers containing steps, memory stack structures extending through the alternating stack, a first contact via structure which contacts a top surface of a respective upper electrically conductive layer in a first step, a first dielectric spacer which does not contact any of the electrically conductive layers other than the respective upper electrically conductive layer in the first step, a second contact via structure which contacts a top surface of a respective lower electrically conductive layer in the first step, and a second dielectric spacer which extends through the respective upper electrically conductive layer, and which contacts the respective lower electrically conductive layer.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers containing steps, memory stack structures extending through the alternating stack, a first contact via structure which contacts a top surface of a respective upper electrically conductive layer in a first step, a first dielectric spacer which does not contact any of the electrically conductive layers other than the respective upper electrically conductive layer in the first step, a second contact via structure which contacts a top surface of a respective lower electrically conductive layer in the first step, and a second dielectric spacer which extends through the respective upper electrically conductive layer, and which contacts the respective lower electrically conductive layer.

Abstract: A range sensor includes a silicon substrate and a transfer electrode. The silicon substrate includes a first principal surface and a second principal surface opposing each other. The silicon substrate is provided with a charge generation region configured to generate a charge in response to incident light and a charge collection region configured to collect charges from the charge generation region, on the first principal surface side. The transfer electrode is disposed between the charge generation region and the charge collection region on the first principal surface. A region of the second principal surface corresponding at least to the charge generation region is formed with a plurality of protrusions. The plurality of protrusions includes a slope inclined with respect to a thickness direction of the silicon substrate. A (111) plane of the silicon substrate is exposed as the slope at the protrusion. A height of the protrusion is 200 nm or more.

Abstract: A light detection device includes a first photodiode, a second photodiode connected in series to the first photodiode, a first light source configured to output first pulsed light to which the first photodiode is sensitive, and a signal output unit configured to output a current as a detection signal, the current that flow through the second photodiode.

Abstract: The present embodiment relates to a distance sensor that reduces a difference in amounts of current injected into each of plural charge collection regions prepared for one photosensitive region in order to avoid saturation caused by disturbance light. A current injection circuit injecting current into each charge collection region includes a voltage generation circuit generating a control voltage for adjustment of the injected current amount, and the voltage generation circuit generates the control voltage corresponding to a large amount of charge between the charge amounts of storage nodes coupled, respectively, to the charge collection regions. Meanwhile, a cascode device is disposed between a transistor configured to adjust the amount of current according to the control voltage and the storage node, and a potential of a current output end of the transistor and a potential of the storage node are separated.

Abstract: A light detection device includes a first photodiode, a second photodiode connected in series to the first photodiode, a first light source configured to output first pulsed light to which the first photodiode is sensitive, and a signal output unit configured to output a current as a detection signal, the current that flow through the second photodiode.

Abstract: In accordance with an irradiation position of pulsed light, a selecting unit outputs a first transfer signal to a first transfer electrodes and outputs a second transfer signal to a second transfer electrodes, to allow signal charges to flow into first and second signal charge-collecting regions of a pixel corresponding to the irradiation position, and outputs a third transfer signal to a third transfer electrodes to allow unnecessary charges to flow into an unnecessary charge-discharging regions of a pixel other than the pixel corresponding to the irradiation position. An arithmetic unit reads out signals corresponding to respective quantities of signal charges collected in the first and second signal charge-collecting regions of the pixel selected by the selecting unit, and calculates a distance to an object based on a ratio between a quantity of signal charges collected in the first signal charge-collecting regions and a quantity of signal charges collected in the second signal charge-collecting regions.

Abstract: A range sensor includes a silicon substrate and a transfer electrode. The silicon substrate includes a first principal surface and a second principal surface opposing each other. The silicon substrate is provided with a charge generation region configured to generate a charge in response to incident light and a charge collection region configured to collect charges from the charge generation region, on the first principal surface side. The transfer electrode is disposed between the charge generation region and the charge collection region on the first principal surface. A region of the second principal surface corresponding at least to the charge generation region is formed with a plurality of protrusions. The plurality of protrusions includes a slope inclined with respect to a thickness direction of the silicon substrate. A (111) plane of the silicon substrate is exposed as the slope at the protrusion. A height of the protrusion is 200 nm or more.

Abstract: The processing unit causes a light source unit to emit modulated light in one or more emission periods in a plurality of charge transfer cycles within a frame period from connection of an accumulating region to a reset potential to next connection of the accumulating region to the reset potential by controlling a reset switch, and increases the number of emission periods per charge transfer cycle within one frame period. The processing unit obtains, from a sensor unit, a plurality of read values corresponding to a charge amount accumulated in the accumulating region at an alternate point with the plurality of charge transfer cycles, in each of a plurality of read cycles corresponding to each of the plurality of charge transfer cycles. The processing unit calculates the distance based on the plurality of obtained read values.

Abstract: The present embodiment relates to a distance sensor that reduces a difference in amounts of current injected into each of plural charge collection regions prepared for one photosensitive region in order to avoid saturation caused by disturbance light. A current injection circuit injecting current into each charge collection region includes a voltage generation circuit generating a control voltage for adjustment of the injected current amount, and the voltage generation circuit generates the control voltage corresponding to a large amount of charge between the charge amounts of storage nodes coupled, respectively, to the charge collection regions. Meanwhile, a cascode device is disposed between a transistor configured to adjust the amount of current according to the control voltage and the storage node, and a potential of a current output end of the transistor and a potential of the storage node are separated.