Abstract: A laser annealing method includes: step A of providing a substrate having an amorphous semiconductor film formed on a surface thereof; and step B of selectively irradiating a portion of the amorphous semiconductor film with laser light. The step B includes a step of simultaneously forming, in the portion, two molten regions that have elongate shapes congruent to each other and are arranged in line symmetry with each other.

Abstract: The present invention provides a positive type photosensitive siloxane composition in which a film formed by the same has high heat resistance, high strength and high crack resistance, an active matrix substrate in which by-product is not generated, an occurrence of defects is suppressed, and an interlayer insulating film is easily formed at a low cost while having good transmittance, a display apparatus including the active matrix substrate, and a method of manufacturing the active matrix substrate. An active matrix substrate includes a plurality of gate wirings provided so as to extend parallel to each other on an insulating substrate, and a plurality of source wirings provided so as to extend parallel to each other in a direction intersecting the respective gate wirings. An interlayer insulating film and a gate insulating film are interposed at portions including the intersecting portions of the gate wirings and the source wirings, on a lower side of the source wiring.

Abstract: A laser annealing method includes: step A of providing a substrate having an amorphous semiconductor film formed on a surface thereof; and step B of selectively irradiating a portion of the amorphous semiconductor film with laser light. The step B includes a step of simultaneously forming, in the portion, two molten regions that have elongate shapes congruent to each other and are arranged in line symmetry with each other.

Abstract: A laser annealing method includes: step A of providing a substrate having an amorphous semiconductor film formed on a surface thereof; and step BF of selectively irradiating a portion of the amorphous semiconductor film with laser light. Step B includes a step of simultaneously forming, in said portion, a first melted region that is elongated in a first direction and a second direction that is elongated in a second melted region different from the first direction.

Abstract: The present invention provides a positive type photosensitive siloxane composition in which a film formed by the same has high heat resistance, high strength and high crack resistance, an active matrix substrate in which by-product is not generated, an occurrence of defects is suppressed, and an interlayer insulating film is easily formed at a low cost while having good transmittance, a display apparatus including the active matrix substrate, and a method of manufacturing the active matrix substrate. An active matrix substrate includes a plurality of gate wirings provided so as to extend parallel to each other on an insulating substrate, and a plurality of source wirings provided so as to extend parallel to each other in a direction intersecting the respective gate wirings. An interlayer insulating film and a gate insulating film are interposed at portions including the intersecting portions of the gate wirings and the source wirings, on a lower side of the source wiring.

Abstract: Provide are: an active matrix substrate with a preferable transmittance in which no by-product is generated because no resist is used and an interlayer insulating film is formed at low cost while the occurrence of a failure is suppressed and a favorable yield is obtained; a display apparatus; and a manufacturing method for the active matrix substrate. A gate electrode and a capacitance wiring are formed on the insulating substrate in the active matrix substrate, and an interlayer insulating film is formed to cover the insulating substrate. On the gate electrode and the capacitance wiring, contact holes Ca and Cb are formed. A gate insulating film is formed on the interlayer insulating film, and a semiconductor film and an n+ film are formed on the portion on the gate insulating film corresponding to the contact hole Ca, each of which is provided with the source electrode and the drain electrode.