Abstract: A transmission includes a speed change gearbox including gears configured to be switched by a movement of a shifter having a cam pin in a guide groove and configured to be moved by a movement of the cam pin following the rotation of a shift drum. The guide groove includes a bent section having an inner wall on an inner side that is formed by (i) first end mill machining performed in a direction in which the guide groove extends; and (ii) second end mill machining performed in the direction in which the guide groove extends, in such a manner as to increase a curvature radius of the inner wall on the inner side formed by the first end mill machining.

Abstract: A diff-lock operation shaft 50 is supported by a case 11 in such a manner as to be rotatable around an axis P1 of the diff-lock operation shaft 50 and operates a diff-lock section 48 to a lock position A2 by being rotated, and a first coil spring 51 is wound around the outer surface of the diff-lock operation shaft 50 concentrically with the diff-lock operation shaft 50, and is linked at one end portion 51b to the diff-lock operation shaft 50 and at another end portion 51a to linking members 55 and 56. The first coil spring 51 is twisted around the axis P1 via the linking members 55 and 56 by the manual operation tool 58 being operated, and the diff-lock operation shaft 50 is rotated via the first coil spring 51.

Abstract: A transfer-case attaching device includes a fixation mechanism. The fixation mechanism includes a connection bolt. The connection bolt includes a screw shaft portion, a large-diameter shaft portion, and a flange portion. The large-diameter shaft portion has a first contact surface at an end portion of the large-diameter shaft portion. The flange portion has a second contact surface at an end portion of the flange portion. A gap between the first contact surface and the second contact surface is set to a tightening-amount limited region, in which tightening of the connection bolt with respect to a transfer case is restricted to or below a predetermined tightening amount.

Abstract: A diff-lock operation shaft 50 is supported by a case 11 in such a manner as to be rotatable around an axis P1 of the diff-lock operation shaft 50 and operates a diff-lock section 48 to a lock position A2 by being rotated, and a first coil spring 51 is wound around the outer surface of the diff-lock operation shaft 50 concentrically with the diff-lock operation shaft 50, and is linked at one end portion 51b to the diff-lock operation shaft 50 and at another end portion 51a to linking members 55 and 56. The first coil spring 51 is twisted around the axis P1 via the linking members 55 and 56 by the manual operation tool 58 being operated, and the diff-lock operation shaft 50 is rotated via the first coil spring 51.

Abstract: A second toothed member is configured to change its position between a meshing position where first teeth mesh with second teeth and a meshing releasing position where the first teeth do not mesh with the second teeth. A first toothed member and a facing member move together with an upper jacket. The second toothed member located at the meshing position receives an impact from the first toothed member so as to collide against an impact absorbing member after rupture of a guide shaft and deform the impact absorbing member. The second toothed member located at the meshing releasing position receives an impact from the facing member so as to cause rupture of the guide shaft and deformation of the impact absorbing member to occur concurrently.

Abstract: A second toothed member is configured to change its position between a meshing position where first teeth mesh with second teeth and a meshing releasing position where the first teeth do not mesh with the second teeth. A first toothed member and a facing member move together with an upper jacket. The second toothed member located at the meshing position receives an impact from the first toothed member so as to collide against an impact absorbing member after rupture of a guide shaft and deform the impact absorbing member. The second toothed member located at the meshing releasing position receives an impact from the facing member so as to cause rupture of the guide shaft and deformation of the impact absorbing member to occur concurrently.

Abstract: A diffusion furnace includes a boat which supports a semiconductor wafer thereon and is rotatable together with the semiconductor wafer. A heater is arranged on the periphery of a core tube which houses the boat therein. The core tube includes a reaction gas supply pipe through which a reaction gas containing a dopant is supplied; and a cooling gas supply pipe through which a cooling gas is supplied toward an outer peripheral portion of the semiconductor wafer.

Abstract: An image forming apparatus includes: a transporter for transporting a sheet; an image forming section for forming an image on the sheet being transported by the transporter with an ink; a liquid absorbent member; a cleaning liquid feeding section for feeding a cleaning liquid to the transporter via the liquid absorbent member to clean the transporter adhered with ink residues; and a cleaning liquid feeding controlling section for controlling the cleaning liquid feeding section to perform the cleaning liquid feeding operation, based on a condition of the image forming apparatus relating to evaporation of the cleaning liquid. This arrangement enables to properly clean a transport belt in an inkjet image forming apparatus, while preventing waste of the cleaning liquid and securing stable driving of the transport belt.

Abstract: The manufacturing method includes: forming a P-type silicon substrate and a high-concentration N-type diffusion layer, in which an N-type impurity is diffused in a first concentration, on an entire surface at a light-incident surface side; forming an etching resistance film on the high-concentration N-type diffusion layer and forming fine pores at a predetermined position within a recess forming regions on the etching resistance film; forming recesses by etching the silicon substrate around a forming position of the fine pores, so as not to leave the high-concentration N-type diffusion layer within the recess forming region; forming the low-concentration N-type diffusion layer, in which an N-type impurity is diffused in a second concentration that is lower than the first concentration, on a surface on which the recesses are formed; and forming a grid electrode in an electrode forming region at a light-incident surface side of the silicon substrate.

Abstract: The manufacturing method includes: forming a P-type silicon substrate and a high-concentration N-type diffusion layer, in which an N-type impurity is diffused in a first concentration, on an entire surface at a light-incident surface side; forming an etching resistance film on the high-concentration N-type diffusion layer and forming fine pores at a predetermined position within a recess forming regions on the etching resistance film; forming recesses by etching the silicon substrate around a forming position of the fine pores, so as not to leave the high-concentration N-type diffusion layer within the recess forming region; forming the low-concentration N-type diffusion layer, in which an N-type impurity is diffused in a second concentration that is lower than the first concentration, on a surface on which the recesses are formed; and forming a grid electrode in an electrode forming region at a light-incident surface side of the silicon substrate.

Abstract: A circuit array substrate includes an optically transparent substrate, pixels having switching elements formed on the transparent substrate, gate electrode lines connected to the switching elements, the gate electrode lines being provided on a first insulation film with separating portions in the pixels, signal lines connected to the switching elements, the signal lines being provided on a second insulation film which is different from the first insulation film, and electrically conductive portions provided on the second film to electrically connect the electrode lines with the separating portions to each other. The separating portions reduce electrostatic capacitances defined between the gate electrode lines and the switching elements when the conductive portions are not connected between the separating portions.

Abstract: An image forming apparatus includes: a transporter for transporting a sheet; an image forming section for forming an image on the sheet being transported by the transporter with an ink; a liquid absorbent member; a cleaning liquid feeding section for feeding a cleaning liquid to the transporter via the liquid absorbent member to clean the transporter adhered with ink residues; and a cleaning liquid feeding controlling section for controlling the cleaning liquid feeding section to perform the cleaning liquid feeding operation, based on a condition of the image forming apparatus relating to evaporation of the cleaning liquid. This arrangement enables to properly clean a transport belt in an inkjet image forming apparatus, while preventing waste of the cleaning liquid and securing stable driving of the transport belt.

Abstract: A terminal box of an output part of a solar cell module, including a case and an outer lid that are molded with a thermoplastic resin and an removal cable cover that is of a knockout type and is arranged in the case includes an inner lid that covers to close an electric circuit that is housed in the case.

Abstract: A gate electrode of a thin film transistor is composed by a three layer structure obtained by laminating a titanium nitride layer as an upper layer on an aluminum layer as a base layer and by laminating an unalloyed titanium layer as a lower layer under the base layer. An ion implantation is used as an ion doping into a source region and drain region as an active layer of the thin film transistor. The source region and the drain region are annealed at a low temperature of 350° C. to 450° C. to be activated. A chemical reaction between the base layer and the upper layer and between the base layer and the lower layer can be suppressed. The rise of the resistance value in the gate electrode can be suppressed. The resistance of the gate electrode can be reduced. The fluctuation of the threshold voltage of the thin film transistor can be suppressed.

Abstract: A terminal box of an output part of a solar cell module, including a case and an outer lid that are molded with a thermoplastic resin and an removal cable cover that is of a knockout type and is arranged in the case includes an inner lid that covers to close an electric circuit that is housed in the case.

Abstract: Gate electrode lines 11 formed on glass substrate 3 are separated by separating portions 32 for respective pixels 5 to shorten lengths of gate electrode lines 11. Both end portions of gate electrode lines 11 separated by separating portions 32 are electrically connected by conductive films 42 made from the same materials as signal electrode lines 13. When glass substrate 3 is lifted up while glass substrate 3 is charged with static electricity, the increases in voltages at gate insulation film 31 provided between gate electrode lines 11 and polycrystalline semiconductor film 22 are effectively suppressed so that electrostatic destruction of gate electrode lines 11 can be prevented.

Abstract: The present invention relates to a method of producing a recrystallized-material-member by melting a given zone of a crystalline-material-member and moving the molten zone continuously along the crystalline-material-member to recrystallize a desired region of the crystalline-material-member, wherein dimension of the molten zone of the crystalline-material-member is controlled to be constant and/or quality of crystal of the recrystallized-material-member is controlled to be uniform.

Abstract: The present invention relates to a method of producing a recrystallized-material-member by melting a given zone of a crystalline-material-member and moving the molten zone continuously along the crystalline-material-member to recrystallize a desired region of the crystalline-material-member, wherein dimension of the molten zone of the crystalline-material-member is controlled to be constant and/or quality of crystal of the recrystallized-material-member is controlled to be uniform.

Abstract: A solar battery cell, solar battery module, and solar battery module group achieving high product value by enabling the display of surface patterns without reducing the power generating efficiency of the solar battery cells are provided. The direction and/or reflectance of reflected light incident to the surface of the solar battery cell are varied by controlling the distribution of the rough surface structure imparted to the solar battery cell surface. The direction or reflectance of reflected light incident to the surface of the solar battery cell is changed in part depending upon the part of the semiconductor solar battery cell surface to which the light is incident. Semiconductor solar battery cells with high product value can therefore be achieved because patterns with strong visual impact can be displayed and easily recognized without reducing the power generation efficiency of the solar battery cell.

Abstract: In a method for fabricating an infrared detector, initially, a CdHgTe layer of a first conductivity type is produced on a front surface of a semiconductor substrate, a plurality of spaced apart CdHgTe regions of a second conductivity type, opposite the first conductivity type, are produced at the surface of the first conductivity type CdHgTe layer, and part of the surface of the first conductivity type CdHgTe layer between the second conductivity type CdHgTe regions is selectively irradiated with a charged particle beam to evaporate Hg atoms from that part, whereby a CdHgTe separation region of the first conductivity type and having a Cd composition larger than that of the first conductivity type CdHgTe layer is produced penetrating through the first conductivity type CdHgTe layer and surrounding each of the second conductivity type CdHgTe regions. Therefore, a highly-integrated high-resolution infrared detector with no crosstalk between pixels is achieved.