Abstract: The present disclosure relates to an etching method including: a first step of forming an etching assistance layer on a surface of at least one of a plurality of silicon-containing regions by plasma of a processing gas generated in a processing container; and a second step of imparting energy to the etching assistance layer. The energy is equal to or greater than energy at which the etching assistance layer is removed, and smaller than energy at which a region located immediately below the etching assistance layer is sputtered, and a sequence including the first step and the second step is executed repeatedly.

Abstract: A laser peening device includes: a laser oscillator; an irradiation nozzle for irradiating a laser beam onto an irradiation target; an optical transmission unit; a shutter attached to the optical transmission unit; a liquid feeder for supplying the irradiation nozzle with liquid to cause the liquid to flow along an optical path of the laser beam running from the irradiation nozzle to the irradiation target; an ongoing irradiation sensor for obtaining information on ongoing laser beam irradiation indicating whether the laser beam is being appropriately irradiated for execution of ongoing laser peening operation on the irradiation target; and a control unit controlling the shutter according to the information on the ongoing laser beam irradiation obtained by the ongoing irradiation sensor.

Abstract: The invention provides a waterless offset lithographic printing plate precursor that is mountable on a magnet type printing cylinder and has high durability and halftone dot reproducibility. The waterless offset lithographic printing plate precursor contains at least a heat-sensitive layer and a silicone rubber layer disposed on a substrate, the substrate being of a ferromagnet material.

Abstract: An apparatus which selectively etches a first region with respect to a second region made of a material different from that of the first region. The apparatus is controlled to perform a first step for generating, in a processing container housing a workpiece to be treated, a plasma of a treatment gas from a gas supply including a fluorocarbon gas, an oxygen-containing gas, and an inert gas, and forming a deposit including fluorocarbon on the object to be treated, and a second step for etching the first region with radicals of the fluorocarbon included in the deposit. The apparatus is also controlled to perform the first step and the second step repeatedly.

Abstract: An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the first region and the second region. In the etch method, first, a plasma of a processing gas including a fluorocarbon gas is generated in a processing chamber where the target object is accommodated. Next, the plasma of the processing gas including the fluorocarbon gas is further generated in the processing chamber where the target object is accommodated. Next, the first region is etched by radicals of fluorocarbon contained in a deposit which is formed on the target object by the generation and the further generation of the plasma of the processing gas containing the fluorocarbon gas. A high frequency powers used for the plasma generation is smaller than a high frequency power used for plasma further generation.

Abstract: An etching method including: (a) providing a workpiece including a first region made of a first material and a second region made of a second material defining a recess, the first region filling the recess of the second region while covering the second region; (b) generating plasma of a first fluorocarbon gas to etch the first region until before exposing the second region; (c) generating plasma of a second fluorocarbon gas to form fluorocarbon deposits on the first region; (d) generating plasma of an inert gas to etch the first region by fluorocarbon radicals contained in the fluorocarbon deposits; and (e) repeating step (c) and step (d) one or more times until after exposing the second region. An etching rate of the first material of the first region is higher than that of the second material of the second region with respect to the second fluorocarbon gas.

Abstract: An etching method including: (a) providing a workpiece including a first region made of a first material and a second region made of a second material defining a recess, the first region filling the recess of the second region while covering the second region; (b) generating plasma of a first fluorocarbon gas to etch the first region until before exposing the second region; (c) generating plasma of a second fluorocarbon gas to form fluorocarbon deposits on the first region; (d) generating plasma of an inert gas to etch the first region by fluorocarbon radicals contained in the fluorocarbon deposits; and (e) repeating step (c) and step (d) one or more times until after exposing the second region. An etching rate of the first material of the first region is higher than that of the second material of the second region with respect to the second fluorocarbon gas.

Abstract: An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the first region and the second region. In the etch method, first, a plasma of a processing gas including a fluorocarbon gas is generated in a processing chamber where the target object is accommodated. Next, the plasma of the processing gas including the fluorocarbon gas is further generated in the processing chamber where the target object is accommodated. Next, the first region is etched by radicals of fluorocarbon contained in a deposit which is formed on the target object by the generation and the further generation of the plasma of the processing gas containing the fluorocarbon gas. A high frequency powers used for the plasma generation is smaller than a high frequency power used for plasma further generation.

Abstract: The present disclosure relates to an etching method including: a first step of forming an etching assistance layer on a surface of at least one of a plurality of silicon-containing regions by plasma of a processing gas generated in a processing container; and a second step of imparting energy to the etching assistance layer. The energy is equal to or greater than energy at which the etching assistance layer is removed, and smaller than energy at which a region located immediately below the etching assistance layer is sputtered, and a sequence including the first step and the second step is executed repeatedly.

Abstract: An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the first region and the second region. In the etch method, first, a plasma of a processing gas including a fluorocarbon gas is generated in a processing chamber where the target object is accommodated. Next, the plasma of the processing gas including the fluorocarbon gas is further generated in the processing chamber where the target object is accommodated. Next, the first region is etched by radicals of fluorocarbon contained in a deposit which is formed on the target object by the generation and the further generation of the plasma of the processing gas containing the fluorocarbon gas. A high frequency powers used for the plasma generation is smaller than a high frequency power used for plasma further generation.

Abstract: The present disclosure relates to an etching method including: a first step of forming an etching assistance layer on a surface of at least one of a plurality of silicon-containing regions by plasma of a processing gas generated in a processing container; and a second step of imparting energy to the etching assistance layer. The energy is equal to or greater than energy at which the etching assistance layer is removed, and smaller than energy at which a region located immediately below the etching assistance layer is sputtered, and a sequence including the first step and the second step is executed repeatedly.

Abstract: A laser peening device of an embodiment comprises: a laser oscillator; an irradiation nozzle for irradiating a laser beam onto an irradiation target; an optical transmission unit; a shutter attached to the optical transmission unit; a liquid feeder for supplying the irradiation nozzle with liquid so as to cause the liquid to flow along an optical path of the laser beam running from the irradiation nozzle to the irradiation target; an ongoing irradiation sensor for obtaining information on ongoing laser beam irradiation indicating whether the laser beam is being appropriately irradiated for execution of ongoing laser peening operation on the irradiation target; and a control unit for controlling the shutter according to the information on the ongoing laser beam irradiation obtained by the ongoing irradiation sensor.

Abstract: There is provided an etching method for etching an antireflection film including silicon according to a pattern of a resist film by using plasma processing with respect to a processing object, the processing object including an etching object film, the antireflection film including silicon laminated on the etching object film, and the resist film laminated on the antireflection film including silicon. The method includes generating plasma of a processing gas containing a fluorocarbon gas in a processing chamber, the processing object being disposed in the processing chamber, and generating plasma of a processing gas containing an inactive gas in the processing chamber, the processing object being disposed in the processing chamber. A set of the first generating and the second generating are repeatedly performed.

Abstract: A method for selectively etching a first region made of silicon oxide with respect to a second region made of silicon nitride or another material different from that of the first region. The method includes a first step for generating, in a processing container housing a workpiece to be treated, a plasma of a treatment gas including a fluorocarbon gas, an oxygen-containing gas, and an inert gas, and forming a deposit including fluorocarbon on the object to be treated; and a second step for etching the first region with radicals of the fluorocarbon included in the deposit. The first step and the second step are executed repeatedly.

Abstract: The present disclosure relates to an etching method including: a first step of forming an etching assistance layer on a surface of at least one of a plurality of silicon-containing regions by plasma of a processing gas generated in a processing container; and a second step of imparting energy to the etching assistance layer. The energy is equal to or greater than energy at which the etching assistance layer is removed, and smaller than energy at which a region located immediately below the etching assistance layer is sputtered, and a sequence including the first step and the second step is executed repeatedly.

Abstract: An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the first region and the second region. In the etch method, first, a plasma of a processing gas including a fluorocarbon gas is generated in a processing chamber where the target object is accommodated. Next, the plasma of the processing gas including the fluorocarbon gas is further generated in the processing chamber where the target object is accommodated. Next, the first region is etched by radicals of fluorocarbon contained in a deposit which is formed on the target object by the generation and the further generation of the plasma of the processing gas containing the fluorocarbon gas. A high frequency powers used for the plasma generation is smaller than a high frequency power used for plasma further generation.

Abstract: An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the first region and the second region. In the etch method, first, a plasma of a processing gas including a fluorocarbon gas is generated in a processing chamber where the target object is accommodated. Next, the plasma of the processing gas including the fluorocarbon gas is further generated in the processing chamber where the target object is accommodated. Next, the first region is etched by radicals of fluorocarbon contained in a deposit which is formed on the target object by the generation and the further generation of the plasma of the processing gas containing the fluorocarbon gas. A high frequency powers used for the plasma generation is smaller than a high frequency power used for plasma further generation.

Abstract: An etching method including: (a) providing a workpiece including a first region made of a first material and a second region made of a second material defining a recess, the first region filling the recess of the second region while covering the second region; (b) generating plasma of a first fluorocarbon gas to etch the first region until before exposing the second region; (c) generating plasma of a second fluorocarbon gas to form fluorocarbon deposits on the first region; (d) generating plasma of an inert gas to etch the first region by fluorocarbon radicals contained in the fluorocarbon deposits; and (e) repeating step (c) and step (d) one or more times until after exposing the second region. An etching rate of the first material of the first region is higher than that of the second material of the second region with respect to the second fluorocarbon gas.

Abstract: An optical line terminal (OLT) that configures a passive optical network (PON) system in cooperation with an optical network unit (ONU). The OLT has a controller to control a link state with the ONU. The controller generates, in one case, a control signal specifying a first low power consumption mode in which the ONU operates in the low power consumption mode in an upstream direction, and generates, in another case, the control signal specifying a second low power consumption mode in which the ONU operates in the low power consumption mode in both upstream and downstream directions. Further, the generated control signal is transmitted to the ONU.

Abstract: An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride. The target object includes the second region, the first region and a mask. The etching method includes a first sequence and a second sequence. Each of sequence includes, a first step of generating a plasma of a processing gas containing a fluorocarbon gas in a processing chamber where the target object is accommodated and forming a deposit containing fluorocarbon on the target object, and a second step of etching the first region by radicals of fluorocarbon contained in the deposit. The first sequence is performed during a period including time when the second region is exposed, and an etching amount of the first region in the first sequence is smaller than an etching amount of the first region in the second sequence.