Abstract: A main object of the present disclosure is to provide an all solid state battery including a dispersant-containing layer with good solid electrolyte dispersibility. The present disclosure solves the above problem by providing an all solid state battery comprising a cathode layer, an anode layer, and a solid electrolyte layer disposed between the cathode layer and the anode layer, and at least one of the cathode layer, the anode layer, and the solid electrolyte layer is a dispersant-containing layer including at least a solid electrolyte and a dispersant, an amine value of the dispersant is 20 mgKOH/g or more and 200 mgKOH/g or less, a weight-average molecular weight of the dispersant is less than 1,500,000 g/mol, and a proportion of the dispersant in the dispersant-containing layer is 0.1 weight % or more and 20 weight % or less.

Abstract: Inhibition of movement of charges in a semiconductor element (100) formed by growing a group III-V compound semiconductor layer on a silicon substrate (110) is prevented. The semiconductor element (100) includes a silicon substrate (110), a first compound semiconductor layer (140), a second compound semiconductor layer (150), and an electrode (121). The first compound semiconductor layer (140) is formed on the silicon substrate (110). The second compound semiconductor layer (150) is stacked on the first compound semiconductor layer (140). The electrode (121) is disposed on the silicon substrate (110) and controls movement of charges between the silicon substrate (110) and the second compound semiconductor layer (150) via the first compound semiconductor layer (140).

Abstract: A light-emitting element includes a transparent substrate, a III-V nitride semiconductor layer including rare earth metal elements which is formed on said transparent substrate, and an irradiation source of electron beam which is disposed within 5 mm from the surface of said III-V nitride semiconductor layer so as to be opposite to said III-V nitride semiconductor layer. Then, the rare earth metal elements in the III-V nitride semiconductor layer are excited by electron beams from the irradiation source and a given fluorescence inherent to the rare earth metal elements are emitted.

Abstract: A light-emitting element includes a transparent substrate, a III-V nitride semiconductor layer including rare earth metal elements which is formed on said transparent substrate, and an irradiation source of electron beam which is disposed within 5 mm from the surface of said III-V nitride semiconductor layer so as to be opposite to said III-V nitride semiconductor layer. Then, the rare earth metal elements in the III-V nitride semiconductor layer are excited by electron beams from the irradiation source and a given fluorescence inherent to the rare earth metal elements are emitted.