Abstract: A rotational speed of a motor is detected and a speed reduction rate is evaluated based on the detected rotational speed, a current mode is transitioned to a deceleration mode when the speed reduction rate is equal to or greater than a first threshold value, the deceleration mode is released when the speed reduction rate is less than the first threshold value, and the PWM drive is switched to the one-side PWM drive to drive the motor when a power supply voltage to be used for driving the motor reaches equal to or greater than a second threshold value during the deceleration mode.

Abstract: Implemented are: a first energization step of energizing a motor during a first period in any first excitation pattern at a start of the motor; and a second energization step of energizing the motor, after the first energization step, during a second period longer than the first period in a second excitation pattern advanced from the first excitation pattern by a predetermined angle, for example, 120°, in a rotation instruction direction. After the second energization step, forced commutation is started so that the motor rotates from a rotational position corresponding to the second excitation pattern.

Abstract: A touch panel-equipped display device (100A) includes a display member (120), a light transmitting touch panel (130) arranged to overlap with the display member (120), a panel holder (140A) configured to support the display member (120), and an actuator (1) configured to transmit vibration in an in-plane direction of an input surface (115) to an input member (110) configuring the input surface (115) for the touch panel (130). The input member (110) is supported by the panel holder (140A) via a first elastic member (180A) having at least one of elasticity and viscoelasticity. Further, the actuator (1) is not connected to the panel holder (140A). Therefore, even if an operator strongly presses the input surface (151), the vibration of the actuator (1) can be properly transmitted to a fingertip of the operator.

Abstract: A color detecting sensor includes a light emitting element for emitting red light, a light emitting element for emitting green light, a light emitting element for emitting blue light, a light receiving element for receiving light emitted from each of the light emitting elements through an ink ribbon, and detecting device for detecting a color of the ink ribbon forming at least a colorless and transparent portion and the colorless and transparent portion based on an output signal of the light receiving element, the detecting device including a storage section for storing, as color reference data, the output signal of the light receiving element when the light emitting elements emit light through the colorless and transparent portion of the ink ribbon respectively, and a color deciding section for comparing, with the color reference data, the output signal of the light receiving element when the light emitting elements emit light through the color formed on the ink ribbon respectively, thereby deciding the colo

Abstract: There are provided a light emitting element for emitting red light, a light emitting element for emitting green light, a light emitting element for emitting blue light, a light receiving element for receiving light emitted from each of the light emitting elements through an ink ribbon, and detecting device for detecting a color of the ink ribbon forming at least a colorless and transparent portion and the colorless and transparent portion based on an output signal of the light receiving element, the detecting device including a storage section for storing, as color reference data, the output signal of the light receiving element when the light emitting elements and emit light through the colorless and transparent portion of the ink ribbon respectively, and a color deciding section for comparing, with the color reference data, the output signal of the light receiving element when the light emitting elements emit light through the color formed on the ink ribbon respectively, thereby deciding the color of the in

Abstract: A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type formed on the surface of the first semiconductor layer, the energy difference between the bottom of the conductive band and the vacuum level in the second semiconductor layer being smaller than that in the first semiconductor layer, a gate electrode formed above the second semiconductor layer with a gate insulating film interposed therebetween, and a pair of third semiconductor layers of the second conductivity type, being in contact with at least the first semiconductor layer and faced each other in a region of the surface of the first semiconductor layer, so that a channel region is formed under the gate electrode.

Abstract: An injection enhanced insulated gate bipolar transistor is disclosed in which an average roughness of silicon on the side and bottom surfaces of trench grooves below a gate oxide film is made to be 0.6 nm or smaller. Irregular portions on the surface of silicon of the gate oxide film can be prevented. Thus, lowering of the gate breakdown voltage occurring because of dispersion of the thickness of the gate oxide film due to the irregular portions can be prevented.

Abstract: A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type formed on the surface of the first semiconductor layer, the energy difference between the bottom of the conductive band and the vacuum level in the second semiconductor layer being smaller than that in the first semiconductor layer, a gate electrode formed above the second semiconductor layer with a gate insulating film interposed therebetween, and a pair of third semiconductor layers of the second conductivity type, being in contact with at least the first semiconductor layer and faced each other in a region of the surface of the first semiconductor layer, so that a channel region is formed under the gate electrode.

Abstract: A method for measuring carrier lifetime of IV group semiconductors. The method includes the steps of irradiating pulse light, whose photon energy is larger than the bandgap of a IV group semiconductor and whose interval is sufficiently longer than the carrier lifetime of a IV group semiconductor, on a IV group semiconductor to be measured, exciting the IV group semiconductor, and generating excess carriers, obtaining a decay time of a band emission from a IV group semiconductor, and determining a carrier lifetime of the IV group semiconductor from the decay time of the band emission.

Abstract: A method is directed to manufacturing gallium phosphide by reducing gallium orthophosphate in a reducing atmosphere while heating it. In reduction, phosphorus, gallium phosphide and/or phosphine is added as an additive to gallium orthophosphate.